CM100DU-12F

MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE CM100DU-12F ¡IC ................................................................... 100A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point 94 7 17 80 ±0.25 23 23 2–φ6.5 MOUNTING HOLES 4 E2 G2 24 C2E1 E2 C1 18 G1E1 4 11 48 24 27 24 12 3–M5NUTS 12mm deep 16 2.5 25 2.5 16 13.5 E2 G2 E2 RTC TAB #110. t=0.5 7.5 C2E1 4 13 30 –0.5 +1 21.2 LABEL CIRCUIT DIAGRAM Sep.2000 G1 E1 CM RTC C1 MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE ( Note 1) IEM ( Note 1) PC ( Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 600 ±20 100 200 100 200 350 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W °C °C V N•m N•m g (Note 2) (Note 2) Charged part to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr ( Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V VGE = VCES, VCE = 0V Tj = 25°C IC = 100A, VGE = 15V Tj = 125 °C VCE = 10V VGE = 0V VCC = 300V, I C = 100A, VGE = 15V VCC = 300V, IC = 100A VGE1 = VGE2 = 15V RG = 6.3Ω, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied *2 (1/2 module) Tc measured point is just under the chips Min. — 5 — — — — — — — — — — — — — — — — — — 6.3 Limits Typ. — 6 — 1.6 1.6 — — — 620 — — — — — 1.9 — — — 0.07 — — Max. 1 7 20 2.2 — 27 1.8 1 — 100 80 300 250 150 — 2.6 0.35 0.70 — 0.28 *3 63 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Sep.2000 MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 200 Tj=25°C VGE=20V 9.5 15 11 10 3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 40 80 120 160 200 160 9 120 8.5 80 40 8 7.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 5 Tj = 25°C EMITTER CURRENT IE (A) Tj = 25°C 4 3 2 102 7 5 3 2 3 IC = 200A IC = 100A IC = 40A 2 101 7 5 3 2 1 0 6 8 10 12 14 16 18 20 100 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 td(off) tf 101 7 5 3 2 SWITCHING TIMES (ns) Cies 102 7 5 3 2 td(on) Conditions: VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 125°C 100 7 5 3 2 101 7 5 3 2 Coes Cres VGE = 0V tr 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR CURRENT IC (A) Sep.2000 MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 trr Irr NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) 102 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.35°C/ W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.7°C/ W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 101 7 5 3 2 Conditions: VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 25°C 2 3 5 7 101 2 3 5 7 102 10–1 10–1 7 5 3 2 7 5 3 2 10–2 Single Pulse TC = 25°C 10–2 100 0 10 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 IC = 100A VCC = 200V VCC = 300V 0 100 300 500 700 900 GATE CHARGE QG (nC) Sep.2000