CM100DU-24NFH

MITSUBISHI IGBT MODULES CM100DU-24NFH HIGH POWER SWITCHING USE CM100DU-24NFH ¡IC ................................................................... 100A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 94 7 17 80 ±0.25 23 23 2–φ6.5 MOUNTING HOLES 4 E2 G2 24 C2E1 E2 C1 18 G1E1 4 11 48 12 3–M5NUTS 12mm deep 16 2.5 25 2.5 16 13.5 E2 G2 TAB 7.5 4 #110. t=0.5 C2E1 E2 13 CM C1 G1 E1 30 –0.5 +1 LABEL 21.2 CIRCUIT DIAGRAM Feb. 2009 MITSUBISHI IGBT MODULES CM100DU-24NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso — — — (Tj = 25°C, unless otherwise specified) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4 Conditions (Note 2) (Note 2) (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value Ratings 1200 ±20 100 200 100 200 560 730 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Parameter Collector cutoff current (Tj = 25°C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 100A, VGE = 15V VCC = 600V, IC = 100A VGE = ±15V RG = 3.1Ω, Inductive load IE = 100A IE = 100A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) IGBT part (1/2 module) FWDi part (1/2 module) Tj = 25°C Tj = 125°C Min. — 4.5 — — — — — — — — — — — — — — — — — — — 3.1 Limits Typ. — 6 — 5.0 5.0 — — — 450 — — — — — 5.0 — — — 0.07 — — — Max. 1 7.5 0.5 6.5 — 16 1.3 0.3 — 100 50 250 150 150 — 3.5 0.22 0.47 — 0.17*3 0.29*3 31 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V K/W K/W K/W K/W K/W Ω Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance*4 External gate resistance *1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : Case temperature (TC’) measured point is just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. No short circuit capability is designed. Feb. 2009 2 MITSUBISHI IGBT MODULES CM100DU-24NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT IC (A) 180 160 140 120 100 80 60 40 20 0 0 Tj = 25°C VGE=20 (V) 14 13 15 12 180 160 140 120 100 80 60 40 20 0 0 VCE = 10V 11 10 9 8 2 4 6 8 10 Tj = 25°C Tj = 125°C 5 10 15 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 9 VGE = 15V 8 Tj = 25°C Tj = 125°C 7 6 5 4 3 2 1 0 0 40 80 120 160 200 10 Tj = 25°C IC = 200A 8 6 IC = 100A 4 IC = 40A 2 0 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 125°C 101 7 5 3 2 Cies 102 7 5 3 2 Tj = 25°C 100 7 5 3 2 Coes 101 0 1 2 3 4 5 Cres VGE = 0V 10–1 –1 0 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 10 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 EMITTER-COLLECTOR VOLTAGE VEC (V) 3 MITSUBISHI IGBT MODULES CM100DU-24NFH HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIME (ns) 3 2 5 3 2 5 3 2 td(off) td(on) tf tr Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load 5 7 102 23 5 7 103 102 7 5 3 2 Irr 102 7 5 3 2 102 trr Conditions: 5 VCC = 600V VGE = ±15V 3 RG = 3.1Ω 2 Tj = 25°C Inductive load 101 23 5 7 103 7 101 7 5 3 2 100 1 10 2 3 101 1 10 2 3 5 7 102 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 7 5 3 2 Single Pulse TC = 25°C 10–1 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 10–1 7 5 3 2 10–1 7 5 3 2 10–1 7 5 3 2 10–2 7 5 3 Per unit base = 2 10–2 7 5 3 2 10–2 7 5 3 Per unit base = 2 10–2 7 5 3 2 Rth(j–c) = 0.22K/W 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 10–3 Rth(j–c) = 0.47K/W 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 100A VCC = 400V 15 VCC = 600V 10 5 0 0 100 200 300 400 500 600 700 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 103 Tj = 25°C 7 7