CM100DUS-12F_11

MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE C M100DUS-12F - 4th generation Fast switching IGBT module - Collector current IC .............…............… Collector-emitter voltage VCES ...........… Maximum junction temperature T jmax ... ●Flat base Type ●Copper base plate ●RoHS Directive compliant 100A 600V 1 5 0 °C ●UL Recognized under UL1557, File E323585 Dual (Half-Bridge) APPLICATION High frequency (30 kHz ~ 60 kHz) switching use: Induction heating, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm INTERNAL CONNECTION Tolerance otherwise specified Division of Dimension 0.5 over over 3 6 to to to 3 6 30 Tolerance ±0.2 ±0.3 ±0.5 ±0.8 ±1.2 RTC C2E1 Tr2 Di2 RTC G1 E1 Di1 E2 Tr1 C1 over 30 over 120 to 120 to 400 E2 G2 1 February-2011 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) Symbol VCES VGES IC ICRM Ptot Ptot' IE IERM Tj Tstg Visol (Note.1) (Note.1) Item Collector-emitter voltage Gate-emitter voltage Collector current Total power dissipation Emitter current (Free wheeling diode forward current) Junction temperature Storage temperature Isolation voltage G-E short-circuited C-E short-circuited TC=25 °C TC=25 °C TC'=25 °C TC=25 °C (Note.2) Conditions Rating 600 ±20 100 Unit V V A W A °C V Pulse, Repetitive (Note.2, 5) (Note.3, 5) (Note.2) (Note.4) 200 350 445 100 Pulse, Repetitive (Note.4) 200 -40 ~ +150 -40 ~ +125 2500 Terminals to base plate, RMS, f=60 Hz, AC 1 min ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) Symbol ICES IGES VGE(th) VCEsat Cies Coes Cres QG td(on) tr td(off) tf VEC trr Qrr Eon Eoff Err rg (Note.1) (Note.1) (Note.1) (Note.1) Item Collector-emitter cut-off current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Gate charge Turn-on delay time Rise time Turn-off delay time Fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Turn-on switching energy per pulse Turn-off switching energy per pulse Reverse recovery energy per pulse Internal gate resistance Conditions VCE=VCES, G-E short-circuited ±VGE=VGES, C-E short-circuited IC=10 mA, VCE=10 V IC=100 A VGE=15 V (Note.6) Limits Min. 5 T j =25 °C T j =125 °C 1.7 Typ. 6 2.0 1.95 620 2.0 1.9 1.55 2.2 1.2 0 Max. 1 20 7 2.7 27 1.8 1.0 100 80 300 150 2.6 150 - Unit mA μA V V , VCE=10 V, G-E short-circuited VCC=300 V, IC=100 A, VGE=15 V VCC=300 V, IC=100 A, VGE=±15 V, RG=6.3 Ω, Inductive load IE=100 A (Note.6) nF nC ns , G-E short-circuited V ns μC mJ Ω VCC=300 V, IE=100 A, VGE=±15 V, RG=6.3 Ω, Inductive load VCC=300 V, IC=IE=100 A, VGE=±15 V, RG=6.3 Ω, T j =125 °C, Inductive load Per switch THERMAL RESISTANCE CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)D Rth(c-s) Rth(j-c')Q Rth(j-c')D Item Thermal resistance (Note.2) Conditions Junction to case, per IGBT (Note.2) Limits Min. Typ. 0.07 Max. 0.35 0.70 0.28 0.40 Unit K/W K/W K/W K/W K/W Contact thermal resistance Thermal resistance (Note.3) Junction to case, per FWDi Case to heat sink, per 1/2 module, (Note.7) Thermal grease applied Junction to case, per IGBT Junction to case, per FWDi MECHANICAL CHARACTERISTICS Symbol Mt Ms m ec Mounting torque Weight Flatness of base plate Item Main terminals Mounting to heat sink On the centerline X, Y (Note.8) Conditions M 5 screw M 6 screw Limits Min. 2.5 3.5 -100 Typ. 3.0 4.0 310 Max. 3.5 4.5 +100 Unit N·m g μm 2 February-2011 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE RECOMMENDED OPERATING CONDITIONS (T a =25 °C) Symbol VCC VGEon RG Item (DC) Supply voltage Gate (-emitter drive) voltage External gate resistance Conditions Applied across C1-E2 Applied across G1-Es1/G2-Es2 Per switch Limits Min. 13.5 6.3 Typ. 300 15.0 Max. 400 16.5 63 Unit V Ω Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). Note.2: Case temperature (TC) measured point is base plate side. (Refer to the figure of chip location) Note.3: Case temperature (TC') and heat sink temperature (T s ') are defined on the each surface of base plate and heat sink just under the chips. (Refer to the figure of chip location) The heat sink thermal resistance {R t h ( s - a ) } should measure just under the chips. Note.4: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. Note.5: Junction temperature (T j ) should not increase beyond T j m a x rating. Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of test circuit) Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). Note.8: Base plate flatness measurement points are as in the following figure. -: Concave +: Convex 3 mm X 3 mm Y Bottom 3 mm Bottom -: Concave Bottom +: Convex CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm Case Temperature (T C ) measured point (Base plate side) Tr1/Tr2: IGBT, Di1/Di2: FWDi 3 February-2011 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS C1 VGE=15 V G1 C1 Shortcircuited Shortcircuited G1 Es1 C1 C1 Shortcircuited IC G1 IE G1 Es1 V C2E1 V C2E1 V Shortcircuited Es1 V Es1 C2E1 VGE=15 V G2 C2E1 IC E2 Shortcircuited G2 Shortcircuited G2 Es2 IE E2 G2 Es2 Es2 E2 Es2 E2 Tr1 V C E s a t test circuit iE Tr2 vGE Di1 VEC test circuit ∼ 90 % 0 Di2 0V -V GE iE t Q r r =0.5×I r r ×t r r trr IE L oad + VCC iC ∼ 0A 90 % t Irr +V GE 0V -V GE RG vGE vCE iC 0A t d (o n ) tr t d( o ff) 10% tf t 0.5×I r r Switching characteristics test circuit and waveforms t r r , Q r r test waveform IEM vEC VCC iE vCE ICM VCC iC iC VCC ICM vCE 0A t 0 0.1×ICM 0.1×VCC t 0 0.1×VCC 0.1×ICM t 0V t ti ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy FWDi Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) 4 February-2011 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART OUTPUT CHARACTERISTICS (TYPICAL) T j =25 °C 200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE=15 V 3 13 V 11 V 10 V 9.5 V 9V 8.5 2.5 VGE=20 V 180 15 V 160 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) IC (A) T j =125 °C 2 140 COLLECTOR CURRENT 120 8V 100 1.5 T j =25 °C 80 7.5 60 1 40 7V 20 0.5 0 0 1 2 3 4 5 0 0 50 100 150 200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T j =25 °C 5 1000 FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E short-circuited , T j =25 °C 4.5 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 4 IC=200 A IC=100 A IC=40 A IE (A) EMITTER CURRENT 18 20 100 3.5 3 2.5 2 10 1.5 1 0.5 0 6 8 10 12 14 16 1 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) 5 February-2011 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=300 V, VGE=±15 V, RG=6.3 Ω, T j =125 °C, INDUCTIVE LOAD 1000 100 FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC=300 V, VGE=±15 V, RG=6.3 Ω, T j =125 °C, INDUCTIVE LOAD td(off) trr SWITCHING TIME (ns) 100 tf td(on) t r r (ns), I r r (A) Irr 10 tr 1 1 10 100 10 1 10 100 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=300 V, VGE=±15 V, RG=6.3 Ω, T j =125 °C, INDUCTIVE LOAD, PER PULSE 10 100 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=300 V, IC/IE=100 A, VGE=±15 V, T j =125 °C, INDUCTIVE LOAD, PER PULSE SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) Eon 10 1 Eoff 1 Eon Eoff Err 0.1 1 10 100 Err 0.1 1 10 100 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) EXTERNAL GATE RESISTANCE RG (Ω) 6 February-2011 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE CAPACITANCE CHARACTERISTICS (TYPICAL) G-E short-circuited, T j =25 °C 100 20 GATE CHARGE CHARACTERISTICS (TYPICAL) IC=100 A, T j =25 °C 18 Cies VGE (V) 16 VCC=200 V 14 CAPACITANCE (nF) 10 VCC=300 V GATE-EMITTER VOLTAGE 12 10 8 1 6 Coes 4 Cres 0.1 0.1 1 10 100 2 0 0 100 200 300 400 500 600 700 800 900 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE CHARGE QG (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) Single pulse, TC'=25°C 1 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c') 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 R t h ( j - c ' ) Q =0.28 K/W, R t h ( j - c ' ) D =0.40 K/W TIME (S) 7 February-2011 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! ·Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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