CM100TU-12F

MITSUBISHI IGBT MODULES CM100TU-12F HIGH POWER SWITCHING USE CM100TU-12F ¡IC ................................................................... 100A ¡VCES ............................................................ 600V ¡Insulated Type ¡6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 102 80 ±0.25 20 4–φ5.5 MOUNTING HOLES 1.25 (4) 10 CM N 11 19.1 E G 10 P 11 E 19.1 G 11 11.85 E GuN EuN GvN EvN GwN EwN 1.25 GuP EuP 74 ±0.25 91 G GvP EvP GwP EwP U V W G E G E G E 39.3 18.7 5–M4NUTS Tc measured point 2.8 7.1 10 11 20 19.1 10 20 11 10 0.5 3.05 11 4 8.1 29 –0.5 +1 19.1 Tc measured point P G UP RTC EUP U G VP RTC E VP G VN RTC E VN V GWP RTC EW P GWN RTC EWN W LABEL 26 G UN RTC EUN N CIRCUIT DIAGRAM Feb. 2009 MITSUBISHI IGBT MODULES CM100TU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 600 ±20 100 200 100 200 350 –40 ~ +150 –40 ~ +125 2500 1.3 ~ 1.7 2.5 ~ 3.5 570 Unit V V A A W °C °C Vrms N•m N•m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M4 screw Mounting M5 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Test conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 100A, VGE = 15V VCC = 300V, IC = 100A VGE = ±15V RG = 6.3Ω, Inductive load IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to heat sink, Thermal compound applied*2 (1/6 module) Case temperature measured point is just under the chips Tj = 25°C Tj = 125°C Min. — 5 — — — — — — — — — — — — — — — — — — 6.3 Limits Typ. — 6 — 1.6 1.6 — — — 620 — — — — — 1.9 — — — 0.11 — — Max. 1 7 20 2.2 — 27 1.8 1 — 100 80 300 250 150 — 2.6 0.35 0.70 — 0.28*3 63 Unit mA V µA V nF nC ns ns µC V Contact thermal resistance Thermal resistance External gate resistance K/W Ω Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM100TU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 200 Tj=25°C VGE=20V 9.5 15 11 10 3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 40 80 120 160 200 160 9 120 8.5 80 40 8 7.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 5 Tj = 25°C EMITTER CURRENT IE (A) Tj = 25°C 4 3 2 102 7 5 3 2 3 IC = 200A IC = 100A IC = 40A 2 101 7 5 3 2 1 0 6 8 10 12 14 16 18 20 100 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 td(off) tf 101 7 5 3 2 SWITCHING TIMES (ns) Cies 102 7 5 3 2 td(on) Conditions: VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 125°C 100 7 5 3 2 101 7 5 3 2 Coes Cres VGE = 0V tr 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM100TU-12F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.35K/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.70K/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 102 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 3 2 trr Irr 101 7 5 3 2 Conditions: VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 25°C 2 3 5 7 101 2 3 5 7 102 10–1 10–1 7 5 3 2 7 5 3 2 10–2 Single Pulse TC = 25°C 10–2 100 0 10 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 IC = 100A VCC = 200V VCC = 300V 0 100 300 500 700 900 GATE CHARGE QG (nC) Feb. 2009 4