MITSUBISHI IGBT MODULES
CM100TU-24H
HIGH POWER SWITCHING USE INSULATED TYPE
CM100TU-24H
● IC ................................................................... 100A ● VCES ....................................................... 1200V ● Insulated Type ● 6-elements in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271
APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
CM N
11 21.7
E G
P
11
E
21.7
G
11 14.4
E
17
3.75
107 90 ±0.25 23 12
12
4–φ5.5 MOUNTING HOLES
(4)
GuP EuP GvP EvP GwP EwP
G
G
E
G
E
G
E
GuN EuN GvN EvN GwN EwN
P
GuP EuP GvP EvP GwP EwP
80 ±0.25
102
48.5
U
V
GvN EvN
W
GwN EwN
0.5
N
GuN EuN
3.75
U
V
W
CIRCUIT DIAGRAM
12
5–M5NUTS TC measured point 2.8
11
23 21.7
12
23 11
12
0.8 11 4 TC measured point
29 –0.5
+1
21.7
7.1
LABEL
26
8.1
Feb. 2009 1
MITSUBISHI IGBT MODULES
CM100TU-24H
HIGH POWER SWITCHING USE INSULATED TYPE
(Tj = 25°C, unless otherwise specified)
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — —
Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C
Conditions
Ratings 1200 ±20 100 200 100 200 650 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 680
Unit V V A A A A W °C °C Vrms N·m N·m g
(Note 1) (Note 1)
— — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICES Item
(Tj = 25°C, unless otherwise specified)
Test Conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 100A, VGE = 15V VCC = 600V, IC = 100A VGE = ±15V RG = 3.1Ω Resistive load IE = 100A, VGE = 0V IE = 100A, die / dt = –200A / µs Junction to case, IGBT part (Per 1/6 module) Junction to case, FWDi part (Per 1/6 module) Case to heat sink, conductive grease applied (Per 1/6 module) (Note 6) (Note 4) Tj = 25°C Tj = 125°C
Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance
Min — 4.5 — — — — — — — — — — — — — — — — —
Limits Typ — 6 — 2.9 2.85 — — — 375 — — — — — — 0.55 — — 0.09
Max 1 7.5 0.5 3.7 — 15 5 3 — 100 200 300 350 3.2 300 — 0.19 0.35 —
Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W
Note 1. 2. 3. 4. 5. 6.
Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Feb. 2009 2
MITSUBISHI IGBT MODULES
CM100TU-24H
HIGH POWER SWITCHING USE INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 200
COLLECTOR CURRENT IC (A)
TRANSFER CHARACTERISTICS (TYPICAL) 200
COLLECTOR CURRENT IC (A)
VGE = 20 (V) Tj = 25°C
15
12
VCE = 10V
150 11 100 10 50 9 8 0 0 2 4 6 8 10
150
100
50 Tj = 25°C Tj = 125°C 0 4 8 12 16 20
0
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
5 VGE = 15V Tj = 25°C Tj = 125°C 4
10
Tj = 25°C
8
3
6 IC = 200A IC = 100A 2 IC = 40A
2
4
1
0
0
50
100
150
200
0
0
4
8
12
16
20
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103
EMITTER CURRENT IE (A)
7 5 3 2
CAPACITANCE CHARACTERISTICS (TYPICAL) 102
CAPACITANCE Cies, Coes, Cres (nF)
7 5 3 2
Tj = 25°C
VGE = 0V
101
7 5 3 2
Cies
102
7 5 3 2
100
7 5 3 2
Coes Cres
101 1.0
1.5
2.0
2.5
3.0
3.5
10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2009 3
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM100TU-24H
HIGH POWER SWITCHING USE INSULATED TYPE
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103
7 5
tf td(off) td(on) tr
REVERSE RECOVERY TIME trr (ns)
Tj = 125°C
SWITCHING TIMES (ns)
3 2
5 3 2
5 3 2
102
7 5 3 2
trr 102
7 5 3 2
101 Irr
7 5 3 2
101
7 5 3 2
100
VCC = 600V VGE = ±15V RG = 3.1Ω
7 101 2 3 5 7 102 2 3 57
101
7 101
2
3
5 7 102
100
2 3 57
COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C
2 7 5 3 2 7 5 3 2 7 5 3 2
EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C
2 7 5 3 2 7 5 3 2 7 5 3 2
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c)
100
Per unit base = Rth(j – c) = 0.19K/W
3 2
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c)
100
Per unit base = Rth(j – c) = 0.35K/W
3 2
10–1
10–1
7 5 3 2 7 5 3 2
10–1
10–1
7 5 3 2 7 5 3 2
10–2
10–2
10–2
10–2
10–3
10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s)
10–3
10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s)
GATE CHARGE CHARACTERISTICS (TYPICAL) 20
GATE-EMITTER VOLTAGE VGE (V)
IC = 100A
15
VCC = 400V VCC = 600V
10
5
0
0
100
200
300
400
500
GATE CHARGE QG (nC)
Feb. 2009 4
REVERSE RECOVERY CURRENT Irr (A)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 – di /dt = 200A /µs 7 7 Tj = 25°C
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