CM10MD-24H

MITSUBISHI IGBT MODULES CM10MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE CM10MD-24H ¡IC ..................................................................... 10A ¡VCES ......................................................... 1200V ¡Insulated Type ¡CIB Module 3φ Inverter+3φ Converter+Brake ¡UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics OUTLINE DRAWING & CIRCUIT DIAGRAM P P1 GU R S T B EU GV EV GW EW Dimensions in mm D 2.54 2.54 2.54 2.54 2.54 2.54 2.54 GB GU GV GW E 7.5 8 8 12.28 7.62 7.62 7.62 GW EU EV GV EW GW GV GU GB E N 2 - φ4.8 ±0.1 MOUNTING HOLES U V CIRCUIT DIAGRAM W P P1 N GU 9 ±0.1 54 64 ±0.5 9 ±0.1 LABEL 53 ±0.5 R S T B U V W 2 - φ4.8 ±0.2 GUIDE HOLE 8 26.5 ±0.3 26.5 ±0.3 32 2 1 (30°) t = 0.5 0.8 t = 0.5 16.5 5 +1.0 –0.5 8 8 12.5 12.5 80 ±0.3 90 ±0.5 8 8 5.3 5 +1.0 –0.5 MAIN CIRCUIT TERMINAL CONTROL CIRCUIT TERMINAL Note. Not use the guiding holes to mount on the cooling fin. Feb.1999 MITSUBISHI IGBT MODULES CM10MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3) (Tj = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation G – E Short C – E Short TC = 25°C PULSE TC = 25°C PULSE Tf = 25°C Condition (Note. 2) (Note. 2) Rating 1200 ±20 10 20 10 20 57 Unit V V A A A A W BRAKE PART Symbol VCES VGES IC ICM PC (Note. 3) VRRM IFM (Note. 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum Collector dissipation Repetitive peak reverse voltage Forward current G – E Short C – E Short TC = 25°C PULSE Tf = 25°C Clamp diode part Clamp diode part Condition Rating 1200 ±20 10 20 57 1200 10 Unit V V A A W V A (Note. 2) CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing Condition Rating 1600 440 10 100 42 Unit V V A A A 2s 3φ rectifying circuit 1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge current COMMON RATING Symbol Tj Tstg Viso — — Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Condition Rating –40 ~ +150 –40 ~ +125 2500 1.47 ~1.96 60 Unit °C °C V N.m g AC 1 min. Mounting M4 screw Typical value Feb.1999 MITSUBISHI IGBT MODULES CM10MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol ICES Parameter (Tj = 25°C) Test conditions VCE = VCES, VGE = 0V IC = 1.0mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 10A, VGE = 15V Tj = 150°C VCE = 10V VGE = 0V VCC = 600V, IC = 10A, VGE = 15V VCC = 600V, IC = 10A VGE1 = VGE2 = 15V RG = 31Ω Resistive load IE = 10A, VGE = 0V IE = 10A, VGE = 0V die / dt = – 20A / µs IGBT part, Per 1/6 module FWDi part, Per 1/6 module Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-emitter cutoff current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td (on) Turn-on rise time tr td (off) Turn-off delay time tf Turn-off fall time VEC (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) Min. — 4.5 — — — — — — — — — — — — — — — — Limits Typ. — 6 — 2.7 2.45 — — — 50 — — — — — — 0.08 — — Max. 1 7.5 0.5 3.4 — 2.0 1.5 0.4 — 100 200 150 350 3.5 250 — 2.2 3.1 Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC °C/W °C/W (Note. 4) BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Collector-to-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop VCE = VCES, VGE = 0V IC = 1.0mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 10A, VGE = 15V Tj = 150°C VCE = 10V VGE = 0V VCC = 600V, IC = 10A, VGE = 15V IF = 10A, Clamp diode part IGBT part Clamp diode part Condition Min. — 4.5 — — — — — — — — — — Limits Typ. — 6 — 2.7 2.45 — — — 50 — — — Max. 1 7.5 0.5 3.4 — 2.0 1.5 0.4 — 1.7 2.2 2.7 Unit mA V µA V nF nF nF nC V °C/W °C/W (Note. 4) Cies Coes Cres QG VFM Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) CONVERTER PART Symbol Parameter VR = VRRM, Tj = 150°C IF = 10A Per 1/6 module Condition Min. — — — Limits Typ. — — — Max. 8 1.7 2.7 Unit mA V °C/W Repetitive reverse current IRRM Forward voltage drop VFM Rth(j-f) (Note. 5) Thermal resistance Note 1. 2. 3. 4. 5. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Thermal resistance is specified under following conditions. • The conductive greese applied, between module and fin. • Al plate is used as fin. Feb.1999 MITSUBISHI IGBT MODULES CM10MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 20 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 20 VCE = 10V COLLECTOR CURRENT IC (A) VGE = 20 (V) Tj = 25°C 15 12 15 15 11 10 10 5 9 87 0 0 1 2 3 4 5 6 7 8 9 10 10 5 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 12 14 16 18 20 0 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 IC = 4A IC = 10A IC = 20A Tj = 25°C 4 VGE = 15V Tj = 25°C Tj = 125°C 3 2 1 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISITICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) 7 5 CAPACITANCE VS. VCE (TYPICAL) 101 3 2 7 VGE = 0V 5 Tj = 25°C EMITTER CURRENT IE (A) 3 2 Cies 100 7 5 3 2 101 7 5 3 2 Coes 10–1 7 5 3 2 100 7 Cres 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 1.0 1.5 2.0 2.5 3.0 3.5 10–2 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) Feb.1999 MITSUBISHI IGBT MODULES CM10MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) tf td(off) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 101 – di/dt = 20A / µs 7 7 Tj = 25°C 5 3 2 5 3 2 SWITCHING TIMES (ns) 3 2 102 7 5 3 2 REVERSE RECOVERY TIME trr (ns) 7 5 102 7 5 3 2 trr Irr 100 7 5 3 2 tr td(on) VCC = 600V VGE = ±15V RG = 31Ω Tj = 125°C 5 7 100 2 3 5 7 101 2 3 5 101 7 101 7 100 2 3 5 7 101 10–1 2 3 57 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – f) 100 Rth(j – f) = 2.2°C/ W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – f) 100 Rth(j – f) = 3.1°C/ W 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) VGE – GATE CHARGE (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 10A VCC = 400V VCC = 600V 20 40 60 80 GATE CHARGE QG (nC) Feb.1999 REVERSE RECOVERY CURRENT lrr (A)