CM10MD3-12H

MITSUBISHI IGBT MODULES CM10MD3-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE CM10MD3-12H ¡IC ..................................................................... 10A ¡VCES ............................................................ 600V ¡Insulated Type ¡CIB Module 3φ Inverter+1φ Converter ¡UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics, UPS OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm MARKING(PRODUCT’S NAME AND LOT NUMBER) K NOT CONNECTED 7.5 8 K P1 2.54 2.54 2.54 2.54 2.54 2.54 P1 GU EU GU GV EV GV GW EW GW 8 12.28 EU GU 7.62 7.62 7.62 EV GV EW GW GV GU 2.54 NOT CONNECTED GW E 2-φ4.8 ±0.1 MOUNTING HOLES R S E A 53 ±0.5 26.5 ±0.3 26.5 ±0.3 32 N U V W CIRCUIT DIAGRAM 9 ±0.1 54 LABEL 9 ±0.1 64 ±0.5 2 1 t = 0.5 (30°) 0.8 t = 0.5 R S A N U V W 2-φ4.8 ±0.2 8 16.5 8 8 12.5 12.5 8 8 5 80 ±0.3 90 ±0.5 MAIN CIRCUIT TERMINAL CONTROL CIRCUIT TERMINAL 5.3 +1.0 –0.5 5 +1.0 –0.5 Note. Not use the guiding holes to mount on the cooling fin. Feb.1999 MITSUBISHI IGBT MODULES CM10MD3-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3) (Tj = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation G – E Short C – E Short TC = 25°C PULSE TC = 25°C PULSE Tf = 25°C Condition (Note. 2) (Note. 2) Rating 600 ±20 10 20 10 20 36 Unit V V A A A A W CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing Condition Rating 800 220 15 300 375 Unit V V A A A 2s 1φ rectifying circuit Tf = 100°C 1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge current COMMON RATING Symbol Tj Tstg Viso — — Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Condition Rating –40 ~ +150 –40 ~ +125 2500 1.47 ~1.96 60 Unit °C °C V N.m g AC 1 min. Mounting M4 screw Typical value Feb.1999 MITSUBISHI IGBT MODULES CM10MD3-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol ICES Parameter (Tj = 25°C) Test conditions VCE = VCES, VGE = 0V IC = 1mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 10A, VGE = 15V Tj = 150°C VCE = 10V VGE = 0V VCC = 300V, IC = 10A, VGE = 15V VCC = 300V, IC = 10A VGE1 = VGE2 = 15V RG = 63Ω Resistive load IE = 10A, VGE = 0V IE = 10A, VGE = 0V die / dt = – 20A / µs IGBT part, Per 1/6 module FWDi part, Per 1/6 module Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-emitter cutoff current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td (on) Turn-on rise time tr td (off) Turn-off delay time tf Turn-off fall time VEC (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) Min. — 4.5 — — — — — — — — — — — — — — — — Limits Typ. — 6 — 2.1 2.15 — — — 30 — — — — — — 0.03 — — Max. 1 7.5 0.5 2.8 — 1.0 0.9 0.2 — 120 300 200 300 2.8 110 — 3.5 4 Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC °C/W °C/W (Note. 4) CONVERTER PART Symbol Parameter VR = VRRM, Tj = 150°C IF = 25A Per 1/4 module Condition Min. — — — Limits Typ. — — — Max. 8 1.5 3.6 Unit mA V °C/W Repetitive reverse current IRRM Forward voltage drop VFM Rth(j-f) (Note. 5) Thermal resistance Note 1. 2. 3. 4. 5. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Thermal resistance is specified under following conditions. • The conductive greese applied, between module and fin. • Al plate is used as fin. Feb.1999 MITSUBISHI IGBT MODULES CM10MD3-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 20 COLLECTOR CURRENT IC (A) VGE=20 (V) 16 Tj=25°C 15 20 COLLECTOR CURRENT IC (A) 12 VCE = 10V 16 TRANSFER CHARACTERISTICS (TYPICAL) 12 11 12 8 10 9 87 8 4 4 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 12 14 16 18 20 0 0 1 2 3 4 5 6 7 8 9 10 0 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE = 15V Tj = 25°C Tj = 125°C 10 9 8 7 6 5 4 3 2 1 0 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25°C 4 3 IC = 20A IC = 10A 2 1 IC = 4A 0 2 4 6 8 10 12 14 16 18 20 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISITICS (TYPICAL) 102 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE VS. VCE (TYPICAL) 101 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 25°C VGE = 0V 100 7 5 3 2 Cies Coes 101 7 5 3 2 10–1 7 5 3 2 Cres 100 0 0.8 1.6 2.4 3.2 4.0 10–2 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb.1999 MITSUBISHI IGBT MODULES CM10MD3-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIMES (ns) tf 5 3 2 5 3 2 3 2 td(off) 102 7 5 3 2 102 7 5 3 2 trr Irr 100 7 5 3 2 td(on) VCC = 300V VGE = ±15V RG = 63Ω Tj = 125°C 2 3 5 7 101 2 3 5 7 102 tr 101 0 10 101 –1 10 2 3 5 7 100 2 3 5 7 101 10–1 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – f) 100 Rth(j – f) = 3.5°C/ W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – f) 100 Rth(j – f) = 4.0°C/ W 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) VGE – GATE CHARGE (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 10A VCC = 200V VCC = 300V 10 20 30 40 50 GATE CHARGE QG (nC) Feb.1999 REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 101 – di/dt = 20A / µs 7 7 Tj = 25°C