CM1200HA-34H

MITSUBISHI HVIGBT MODULES CM1200HA-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HA-34H q IC ................................................................ 1200A q VCES ....................................................... 1700V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 57±0.25 4 - M8 NUTS C C 20 C C C 124±0.25 140 30 G E E E CM E E E C G CIRCUIT DIAGRAM 16.5 3 - M4 NUTS 2.5 18.5 61.5 18 6 - φ 7 MOUNTING HOLES 5 35 11 14.5 38 LABEL HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 31.5 28 5 Mar. 2003 MITSUBISHI HVIGBT MODULES CM1200HA-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 95°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 1700 ±20 1200 2400 1200 2400 13800 –40 ~ +150 –40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W °C °C V N·m N·m N·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VCE = VCES, VGE = 0V IC = 120mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 1200A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 850V, IC = 1200A, VGE = 15V VCC = 850V, IC = 1200A VGE1 = VGE2 = 15V RG = 1.6Ω Resistive load switching operation IE = 1200A, VGE = 0V IE = 1200A die / dt = –2400A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min — 4.5 — — — — — — — — — — — — — — — — — Limits Typ — 5.5 — 2.75 3.30 140 20.0 7.6 6.6 — — — — 2.40 — 200 — — 0.008 Max 30 6.5 0.5 3.58 — — — — — 1.20 1.50 2.00 0.60 3.12 2.00 — 0.009 0.028 — Unit mA V µA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W (Note 4) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (T j) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM1200HA-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj = 25°C VGE = 14V 2000 VGE = 15V VGE = 20V 1600 1200 800 400 0 VGE = 9V VGE = 8V VGE = 7V 0 2 4 6 8 10 VGE = 12V VGE = 11V VGE = 13V VGE = 10V 2400 TRANSFER CHARACTERISTICS (TYPICAL) VCE = 10V COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 2000 1600 1200 800 400 0 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE = 15V 4 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 10 Tj = 25°C IC = 2400A 8 3 6 IC = 1200A 2 4 1 Tj = 25°C Tj = 125°C 0 400 800 1200 1600 2000 2400 2 IC = 480A 0 0 4 8 12 16 20 0 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 CAPACITANCE CHARACTERISTICS (TYPICAL) 4 CAPACITANCE Cies, Coes, Cres (nF) 103 7 5 3 2 102 7 5 3 2 Cies 3 2 1 Tj = 25°C Tj = 125°C 0 400 800 1200 1600 2000 2400 0 Coes 101 7 5 VGE = 0V, Tj = 25°C Cres 3 Cies, Coes : f = 100kHz 2 : f = 1MHz Cres 100 –1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) Mar. 2003 MITSUBISHI HVIGBT MODULES CM1200HA-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE 100 7 5 3 2 10–1 7 5 td(off) td(on) tr tf 3 2 10–1 7 5 3 2 102 7 5 5 7 102 23 5 7 103 23 5 5 7 102 23 5 7 103 23 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) SWITCHING ENERGY (J/P) SWITCHING ENERGY (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1.2 VCC = 850V, VGE = ±15V, RG = 1.6Ω, Tj = 125°C, 1.0 Inductive load 0.8 0.6 0.4 0.2 0 Erec Eon Eoff HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3.0 Eon 2.5 2.0 1.5 1.0 0.5 0 VCC = 850V, IC = 1200A, VGE = ±15V, Tj = 125°C, Inductive load Erec 10 15 20 25 30 GATE RESISTANCE (Ω) Eoff 0 400 800 1200 1600 2000 2400 0 5 CURRENT (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS GATE-EMITTER VOLTAGE VGE (V) 16 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) VCC = 850V IC = 1200A 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 Single Pulse TC = 25°C Rth(j – c)Q = 0.009K/ W Rth(j – c)R = 0.028K/ W 12 8 4 0 0 2000 4000 6000 8000 10000 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) GATE CHARGE QG (nC) Mar. 2003 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (µs) SWITCHING TIMES (µs) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 VCC = 850V, VGE = ±15V 3 RG = 1.6Ω, Tj = 125°C 2 Inductive load REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 850V, Tj = 125°C 3 Inductive load 3 2 VGE = ±15V, RG = 1.6Ω 2 trr 100 103 Irr 7 7 5 5