CM1200HA-66H

MITSUBISHI HVIGBT MODULES CM1200HA-66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HA-66H q IC ................................................................ 1200A q VCES ....................................................... 3300V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 57±0.25 190 171 57±0.25 57±0.25 6 - M8 NUTS 20 E E C C C C 40 124±0.25 140 G C CM E E E C E G CIRCUIT DIAGRAM 20.25 41.25 3 - M4 NUTS 79.4 8 - φ 7MOUNTING HOLES 61.5 13 61.5 5.2 15 40 38 28 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 5 LABEL 30 Mar. 2003 MITSUBISHI HVIGBT MODULES CM1200HA-66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 60°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 3300 ±20 1200 2400 1200 2400 10400 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 Unit V V A A A A W °C °C V N·m N·m N·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. (Tj = 25°C) Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VCE = VCES, VGE = 0V IC = 120mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 1200A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 1650V, IC = 1200A, VGE = 15V VCC = 1650V, IC = 1200A VGE1 = VGE2 = 15V RG = 2.5Ω Resistive load switching operation IE = 1200A, VGE = 0V IE = 1200A die / dt = –2400A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min — 4.5 — — — — — — — — — — — — — — — — — Limits Typ — 6.0 — 4.40 4.80 120 12.0 3.6 5.7 — — — — 3.30 — 300 — — 0.006 Max 15 7.5 0.5 5.72 — — — — — 1.60 2.00 2.50 1.00 4.29 1.20 — 0.012 0.024 — Unit mA V µA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W (Note 4) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (T j) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM1200HA-66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj=25°C VGE=13V VGE=14V VGE=15V VGE=20V VGE=10V VGE=12V VGE=11V 2400 VCE=10V TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) 2000 1600 1200 800 COLLECTOR CURRENT IC (A) 2000 1600 1200 800 400 0 VGE=9V 400 0 VGE=8V VGE=7V 8 10 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 8 VGE=15V 6 10 Tj = 25°C IC = 2400A IC = 1200A 8 6 4 4 IC = 480A 2 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 2000 2400 2 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 8 CAPACITANCE CHARACTERISTICS (TYPICAL) 6 CAPACITANCE Cies, Coes, Cres (nF) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 VGE = 0V, Tj = 25°C Cies, Coes : f = 100kHz : f = 1MHz Cres Cies 4 Coes 2 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 2000 2400 Cres 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) Mar. 2003 MITSUBISHI HVIGBT MODULES CM1200HA-66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIMES (µs) 3 2 td(off) 100 7 5 3 2 10–1 7 5 td(on) tr tf VCC = 1650V, VGE = ±15V RG = 2.5Ω, Tj = 125°C Inductive load 5 7 102 23 5 7 103 23 5 100 7 5 3 2 10–1 7 5 trr Irr 103 7 5 3 2 102 7 5 5 7 102 23 5 7 103 23 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) SWITCHING ENERGY (J/P) SWITCHING ENERGY (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2.4 VCC = 1650V, VGE = ±15V, RG = 2.5Ω, Tj = 125°C, 2.0 Inductive load Eon 1.6 1.2 0.8 0.4 0 Erec HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 4 Eon 3 Eoff 2 Eoff 1 VCC = 1650V, IC = 1200A, VGE = ±15V, Tj = 125°C, Inductive load 0 0 5 10 15 20 0 400 800 CURRENT (A) 1200 1600 GATE RESISTANCE (Ω) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) Mar. 2003 VCC = 1650V IC = 1200A 16 Single Pulse TC = 25°C Rth(j – c)Q = 0.012K/W Rth(j – c)R = 0.024K/W 12 8 4 0 0 2000 4000 6000 8000 10000 GATE CHARGE QG (nC) REVERSE RECOVERY CURRENT Irr (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1650V, Tj = 125°C 3 Inductive load 3 2 VGE = ±15V, RG = 2.5Ω 2