CM1200HC-50H

MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-50H q IC ................................................................ 1200A q VCES ....................................................... 2500V q Insulated Type q 1-element in a Pack q AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 57 ±0.1 190 ±0.5 171 ±0.1 57 ±0.1 57 ±0.1 6 - M8 NUTS C 20 –0.2 +0.1 C C C G E 124 ±0.1 140 ±0.5 40 ±0.2 C C C E E E CM C E E E CIRCUIT DIAGRAM E G 20.25 ±0.2 41.25 ±0.3 3 - M4 NUTS 79.4 ±0.3 61.5 ±0.3 screwing depth min. 7.7 8 - φ7 ±0.1 MOUNTING HOLES screwing depth min. 16.5 61.5 ±0.3 13 ±0.2 15 ±0.2 40 ±0.3 5.2 ±0.2 5 ±0.15 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 29.5 ±0.5 38 +1 0 28 +1 0 MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 105°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 2500 ±20 1200 2400 1200 2400 14700 –40 ~ +150 –40 ~ +125 –40 ~ +125 6000 10 Unit V V A A A A W °C °C °C V µs (Note 1) (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1700V, VCES ≤ 2500V, VGE = 15V Tj = 125°C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Conditions VCE = VCES, VGE = 0V, Tj = 25°C IC = 120mA, VCE = 10V, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C IC = 1200A, VGE = 15V, Tj = 25°C IC = 1200A, VGE = 15V, Tj = 125°C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 1250V, IC = 1200A, VGE = 15V, Tj = 25°C IE = 1200A, VGE = 0V, Tj = 25°C (Note 4) IE = 1200A, VGE = 0V, Tj = 125°C (Note 4) VCC = 1250V, IC = 1200A, VGE = ±15V RG(on) = 1.6Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 1250V, IC = 1200A, VGE = ±15V RG(off) = 1.6Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 1250V, IC = 1200A, VGE = ±15V RG(on) = 1.6Ω, Tj = 125°C, Ls = 100nH Inductive load (Note 4) (Note 4) Min — 5.0 — — — — — — — — — — — — — — — — — — Limits Typ — 6.0 — 2.80 3.15 180 19.8 6.0 8.1 2.50 2.30 — — 1.30 — — 1.20 — 700 0.45 Max 15 7.0 0.5 3.60 — — — — — 3.25 — 1.60 1.00 — 2.50 1.00 — 1.20 — — Unit mA V µA V nF nF nF µC V µs µs J/pulse µs µs J/pulse µs µC J/pulse V EC(Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2) Note 1. 2. 3. 4. Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K Min — — — Limits Typ — — 6.0 Max 8.5 17.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 — 600 19.5 32.0 — — Limits Typ — — — 1.5 — — — 10 0.16 Max 13.0 6.0 2.0 — — — — — — Unit M — CTI da ds LC-E(int) RC-E(int) Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance N·m kg — mm mm nH mΩ IGBT part TC = 25°C HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj = 25°C VGE = 12V 2000 VGE = 20V 2000 VGE = 10V 2400 TRANSFER CHARACTERISTICS (TYPICAL) VCE = 10V COLLECTOR CURRENT (A) 1600 VGE = 15V COLLECTOR CURRENT (A) 1600 1200 1200 800 800 400 VGE = 8V 400 Tj = 25°C Tj = 125°C 6 0 0 2 4 6 8 10 12 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 6 COLLECTOR-EMITTER SATURATION VOLTAGE (V) 6 VGE = 15V 5 EMITTER-COLLECTOR VOLTAGE (V) 5 4 4 3 3 2 2 1 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 2000 2400 1 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 2000 2400 COLLECTOR CURRENT (A) EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 5 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCC = 1250V, IC = 1200A Tj = 25°C VGE = 0V, Tj = 25°C f = 100kHz Cies CAPACITANCE (nF) 102 7 5 3 2 GATE-EMITTER VOLTAGE (V) 16 12 Coes 101 7 5 3 2 8 Cres 4 100 -1 10 23 5 7 100 23 5 7 101 23 5 7 102 0 0 3 6 GATE CHARGE (µC) 9 12 COLLECTOR-EMITTER VOLTAGE (V) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3 VCC = 1250V, VGE = ±15V RG(on) = RG(off) = 1.6Ω Tj = 125°C, Inductive load 6 Eon 5 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 1250V, IC = 1200A VGE = ±15V Tj = 125°C, Inductive load 2.5 SWITCHING ENERGIES (J/pulse) SWITCHING ENERGIES (J/pulse) Eon 4 2 Eoff 1.5 3 1 Erec 2 Eoff 1 Erec 0 5 10 15 20 0.5 0 0 400 800 1200 1600 2000 2400 0 COLLECTOR CURRENT (A) GATE RESISTANCE (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102 7 5 3 2 FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 REVERSE RECOVERY TIME (µs) 3 2 3 2 101 7 5 3 2 101 7 5 3 2 103 lrr 7 5 3 2 td(off) 100 7 5 3 2 td(on) tr tf 100 7 5 3 2 trr 102 7 5 3 2 10-1 1 10 23 5 7 102 23 5 7 103 23 5 7 104 10-1 1 10 23 5 7 102 23 5 7 103 23 5 7 104 101 COLLECTOR CURRENT (A) EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 1.0 Single Pulse, TC = 25°C Rth(j–c)Q = 8.5K/kW Rth(j–c)R = 17K/kW 0.8 0.6 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 REVERSE RECOVERY CURRENT (A) VCC = 1250V, VGE = ±15V RG(on) = RG(off) = 1.6Ω Tj = 125°C, Inductive load VCC = 1250V, VGE = ±15V RG(on) = RG(off) = 1.6Ω Tj = 125°C, Inductive load 104 7 5 SWITCHING TIMES (µs) MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE REVERSE BIAS SAFE OPERATING AREA (RBSOA) 3000 VCC ≤ 1700V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 1.6Ω 3000 FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) VCC ≤ 1700V, di/dt ≤ 4000A/µs Tj = 125°C 2500 REVERSE RECOVERY CURRENT (A) 0 500 1000 1500 2000 2500 3000 2500 COLLECTOR CURRENT (A) 2000 2000 1500 1500 1000 1000 500 500 0 0 0 500 1000 1500 2000 2500 3000 COLLECTOR-EMITTER VOLTAGE (V) EMITTER-COLLECTOR VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005