CM1400DU-24NF

MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE CM1400DU-24NF q IC ................................................................ 1400A q VCES ......................................................... 1200V q Insulated Type q 2-elements in a pack APPLICATION UPS & General purpose inverters, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm A,B HOUSING Type (J. S. T. Mfg. Co. Ltd) A : VHR-2N B : VHR-5N Tc measured point (The side of Cu base plate) 150 137.5±0.25 42 14 14 Tc measured point (The side of Cu 12 2 base plate) 21 11 19 38±0.25 42.5±0.25 38±0.25 74±0.25 74±0.25 34.6 +1.0 –0.5 4 15.7 A G1 E1 G2 E2 C1 8-f6.5 MOUNTING HOLES PPS E2 C1 10.5 B 15.7 5.5 18 129.5 166 9-M6 NUTS 12 14 14 14 14 14 14 42 42 25.1 LABEL C2 C2E1 E2 C1 C1 CIRCUIT DIAGRAM G1 E1 E2 G2 C2E1 C2 1.9 ±0.2 34.6 +1.0 –0.5 Mar. 2003 MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 1400 2800 1400 2800 3900 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 1400 Unit V V A A W °C °C V N•m N•m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) R(lead) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Parameter Collector cutoff current Test conditions VCE = VCES, VGE = 0V Min. — 6 — — — — — — — — — — — — — — — — — — — — 0.22 Limits Typ. — 7 — 1.8 2.0 0.143 — — — 7200 — — — — — 90 — — — 0.016 — — — Max. 1 8 0.5 2.5 — — 220 25 4.7 — 800 300 1000 300 700 — 3.4 0.032 0.053 — 0.014*3 0.023*3 2.2 Unit mA V µA V mΩ nF nC Gate-emitter threshold voltage IC = 140mA, VCE = 10V Gate leakage current Collector-emitter saturation voltage Module lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 VGE = VCES, VCE = 0V Tj = 25°C IC = 1400A, VGE = 15V Tj = 125°C Ic = 1400A, terminal-chip VCE = 10V VGE = 0V VCC = 600V, IC = 1400A, VGE = 15V VCC = 600V, IC = 1400A VGE1 = VGE2 = 15V RG = 0.22Ω, Inductive load switching operation IE = 1400A IE = 1400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied*2 (1/2 module) Tc measured point is just under the chips (IGBT part) Tc measured point is just under the chips (FWDi part) ns ns µC V Contact thermal resistance Thermal resistance External gate resistance °C/W Ω Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Mar. 2003 MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20V 15V 2000 1500 1000 10V 500 8V 0 0 2 4 6 8 9V 10 0 0 4 8 12 13V Tj = 25°C 2500 12V TRANSFER CHARACTERISTICS (TYPICAL) VCE = 10V 2800 COLLECTOR CURRENT IC (A) 2500 COLLECTOR CURRENT (A) 2000 1500 1000 500 11V Tj = 25°C Tj = 125°C 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 15V Tj = 25°C 4 8 3 6 IC = 1400A 4 IC = 2800A 2 IC = 560A 0 6 8 10 12 14 16 18 20 2 1 Tj = 25°C Tj = 125°C 0 0 500 1000 1500 2000 2500 2800 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) 104 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Cies 102 7 5 3 2 103 7 5 3 2 101 7 5 3 2 Coes Tj = 25°C Tj = 125°C 0 1 2 3 4 Cres VGE = 0V 102 100 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Mar. 2003 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 Irr trr SWITCHING TIMES (ns) 103 7 5 3 2 td(off) td(on) tf Conditions: VCC = 600V VGE = ±15V RG = 0.22Ω Tj = 125°C Inductive load 2 3 5 7 103 2 3 5 7 104 102 7 5 3 2 102 7 5 3 tr 2 101 2 10 101 2 10 Conditions: VCC = 600V VGE = ±15V RG = 0.22Ω Tj = 125°C Inductive load 2 3 5 7 103 2 3 5 7 104 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) EMITTER CURRENT IE (A) GATE-EMITTER VOLTAGE VGE (V) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j– c) = 0.032°C/W 3 FWDi part: 2 Per unit base = Rth(j– c) = 0.053°C/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 IC = 1400A 16 VCC = 400V VCC = 600V 12 10–1 10–1 7 5 3 2 7 5 3 2 8 10–2 Single Pulse TC = 25°C 10–2 4 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) 0 0 2000 4000 6000 8000 10000 GATE CHARGE QG (nC) IC-ESW (TYPICAL) 103 7 5 3 2 ESW (mJ/pulse) RG-ESW (TYPICAL) 103 7 5 3 2 ESW (mJ/pulse) 102 7 5 3 2 101 7 5 3 2 100 2 10 23 5 7 103 IC (A) Esw(off) Esw(on) Esw(off) Esw(on) Conditions: VCC = 600V VGE = ±15V Tj = 125°C RG = 0.22Ω Inductive load 23 5 7 104 102 7 5 3 2 101 7 5 3 2 100 0 0.5 1 Conditions: VCC = 600V VGE = ±15V Tj = 125°C IC = 1400A Inductive load 1.5 RG (Ω) Mar. 2003 2 2.5 MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE IC-Err (TYPICAL) 103 7 5 3 Err (mJ/pulse) ESW (mJ/pulse) RG-Err (TYPICAL) 103 7 5 3 2 2 102 7 5 3 2 101 2 10 5 7 103 IE (A) Err Conditions: VCC = 600V VGE = ±15V Tj = 125°C RG = 0.22Ω Inductive load 23 23 5 7 104 102 7 5 3 2 101 7 5 3 2 100 0 0.5 1 Err Conditions: VCC = 600V VGE = ±15V Tj = 125°C IC = 1400A Inductive load 1.5 RG (Ω) 2 2.5 Mar. 2003