CM1500HC-66R

PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM1500HC-66R ● IC ............................................................... 1500 A ● VCES ....................................................... 3300V ● 1-element in a Pack ● Insulated Type ● LPT-IGBT / Soft Recovery Diode ● AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 29.5 ±0.5 57 ±0.25 190 ±0.5 57 ±0.25 57 ±0.25 6-M8 NUTS 15 ±0.3 6 4 2 140 ±0.5 124 ±0.25 20 –0.2 +0.1 40 ±0.3 9 ±0.2 5.2 ±0.3 28 ±0.5 5 ±0.2 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 38 +1 0 LABEL 40 ±0.3 6 (C) C 4 (C) 2 (C) 5 >PET+PBT< 3 1 E C >PET+PBT< G G E 5 (E) 20.25 ±0.3 8-φ7 MOUNTING HOLES 3 (E) 1 (E) CIRCUIT DIAGRAM 3-M4 NUTS 41.25 ±0.3 79.4 ±0.3 61.5 ±0.3 13 ±0.3 61.5 ±0.3 SCREWING DEPTH MIN 7.7 SCREWING DEPTH MIN 16.5 Mar. 2009 1 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc Item Conditions VGE = 0V, Tj = –40…+150°C Collector-emitter voltage VGE = 0V, Tj = –50°C Gate-emitter voltage VCE = 0V, Tj = 25°C DC, Tc = 95°C Collector current (Note 1) Pulse DC Emitter current (Note 2) (Note 1) Pulse Maximum power dissipation(Note 3) Tc = 25°C, IGBT part Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1 min. Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width VCC =2500V, VCE ≤ VCES, VGE =15V, Tj =150°C Ratings 3300 3200 ± 20 1500 3000 1500 3000 15600 6000 2600 –50 ~ +150 –50 ~ +150 –55 ~ +150 10 Unit V V A A A A W V V °C °C °C µs ELECTRICAL CHARACTERISTICS Symbol Item Conditions Tj = 25°C Tj = 125°C Tj = 150°C Min — — — 5.7 –0.5 — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — Limits Typ — 6.0 36.0 6.2 — 210.0 13.0 6.0 16.0 2.45 3.10 3.25 1.00 0.95 0.95 0.28 0.30 0.30 2.45 2.90 3.10 2.70 3.30 3.60 2.70 2.80 2.85 0.30 0.35 0.40 2.00 2.45 2.50 2.20 2.70 2.80 2.15 2.30 2.25 Max 6.0 — — 6.7 0.5 — — — — — 3.70 — — 1.25 1.25 — 0.50 0.50 — — — — — — — 3.30 3.30 — 1.00 1.00 — — — — — — — 2.80 — Unit ICES VGE(th) IGES Cies Coes Cres Qg VCE(sat) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage VCE = VCES, VGE = 0V VCE = 10 V, IC = 150 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25°C VCC = 1800 V, IC = 1500 A, VGE = ±15 V IC = 1500 A VGE = 15 V mA V µA nF nF nF µC V td(on) Turn-on delay time VCC = 1800 V IC = 1500 A VGE = ±15 V RG(on) = 1.6Ω Ls = 100 nH Inductive load tr Turn-on rise time Eon(10%) Turn-on switching energy (Note 5) Eon Turn-on switching energy (Note 6) td(off) Turn-off delay time VCC = 1800 V IC = 1500 A VGE = ±15 V RG(off) = 5.6Ω Ls = 100 nH Inductive load tf Turn-off fall time Eoff(10%) Turn-off switching energy (Note 5) Eoff Turn-off switching energy (Note 6) VEC Emitter-collector voltage (Note 2) IE = 1500 A VGE = 0 V Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C (Note 4) Tj = 125°C Tj = 150°C (Note 4) µs µs J/P J/P µs µs J/P J/P V HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 2 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ELECTRICAL CHARACTERISTICS (continuation) Symbol Item Reverse recovery time (Note 2) Conditions Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C trr Irr Reverse recovery current (Note 2) Qrr Reverse recovery charge (Note 2) Erec(10%) Reverse recovery energy (Note 2)(Note 5) VCC = 1800 V IC = 1500 A VGE = ±15 V RG(on) = 1.6 Ω Ls = 100 nH Inductive load Erec Reverse recovery energy (Note 2)(Note 6) Min — — — — — — — — — — — — — — — Limits Typ 0.50 0.70 0.80 1250 1500 1550 1050 1700 2000 1.05 1.75 2.00 1.20 2.00 2.30 Max — — — — — — — — — — — — — — — Unit µs A µC J/P J/P THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K ,D(c-f) = 100 µm Min — — — Limits Typ — — 6.0 Max 8.0 15.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds LP CE RCC’+EE’ rg Note 1. 2. 3. 4. 5. 6. Item Conditions M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Internal gate resistor Tc = 25°C Tc = 25°C Min 7.0 3.0 1.0 — 600 19.5 32.0 — — — Limits Typ — — — 1.2 — — — 11.0 0.12 1.5 Max 22.0 6.0 3.0 — — — — — — — Unit N·m N·m N·m kg — mm mm nH mΩ Ω Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed T opmax rating (150°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. The integration range of Eon / Eoff / Erec according to IEC 60747. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 3 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 3000 Tj = 150°C VGE = 19V VGE = 15V 2000 VGE = 13V 1500 VGE = 11V COLLECTOR CURRENT (A) TRANSFER CHARACTERISTICS (TYPICAL) 3000 VCE = VGE 2500 2500 COLLECTOR CURRENT (A) 2000 1500 1000 VGE = 9V 500 1000 500 Tj = 25°C Tj = 150°C 0 0 1 2 3 4 5 6 0 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3000 VGE = 15V 2500 COLLECTOR CURRENT (A) EMITTER CURRENT (A) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 3000 2500 2000 2000 1500 1500 1000 1000 500 Tj = 25°C Tj = 125°C Tj = 150°C 0 1 2 3 4 5 500 Tj = 25°C Tj = 125°C Tj = 150°C 0 1 2 3 4 5 0 0 COLLECTOR-EMITTER SATURATION VOLTAGE (V) EMITTER-COLLECTOR VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 4 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 5 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCE = 1800V, IC = 1500A Tj = 25°C 15 3 2 Cies GATE-EMITTER VOLTAGE (V) 10 CAPACITANCE (nF) 102 7 5 3 2 5 0 101 7 5 3 2 Coes Cres VGE = 0V, Tj = 25°C f = 100kHz 23 5 7 100 23 5 7 101 23 5 7 102 -5 -10 100 -1 10 -15 0 5 10 15 20 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 8 7 SWITCHING ENERGIES (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 8 VCC = 1800V, VGE = ±15V RG(on) = 1.6Ω, RG(off) = 5.6Ω LS = 100nH, Tj = 150°C Inductive load VCC = 1800V, VGE = ±15V RG(on) = 1.6Ω, RG(off) = 5.6Ω LS = 100nH, Tj = 125°C Inductive load 7 Eon SWITCHING ENERGIES (J/P) Eon 6 5 4 3 2 1 0 Erec Eoff 6 5 4 3 2 1 0 Erec Eoff 0 500 1000 1500 2000 2500 3000 0 500 1000 1500 2000 2500 3000 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 5 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 8 VCC = 1800V, IC = 1500A VGE = ±15V, LS = 100nH 7 Tj = 125°C, Inductive load 8 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 1800V, IC = 1500A VGE = ±15V, LS = 100nH 7 Tj = 150°C, Inductive load SWITCHING ENERGIES (J/P) 6 5 4 3 2 SWITCHING ENERGIES (J/P) Eon 6 5 4 Eon Eoff Eoff 3 2 1 0 Erec 1 0 Erec 0 2 4 6 8 10 12 0 2 4 6 8 10 12 GATE RESISTOR (Ω) GATE RESISTOR (Ω) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102 7 5 3 2 HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102 7 5 3 2 VCC = 1800V, VGE = ±15V RG(on) = 1.6Ω, RG(off) = 5.6Ω LS = 100nH, Tj = 125°C Inductive load VCC = 1800V, VGE = ±15V RG(on) = 1.6Ω, RG(off) = 5.6Ω LS = 100nH, Tj = 150°C Inductive load 101 101 SWITCHING TIMES (µs) 3 2 SWITCHING TIMES (µs) 7 5 7 5 3 2 td(off) td(on) tf td(off) 100 7 5 3 2 100 7 5 3 2 tr td(on) 10-1 7 5 3 2 10-1 tr 7 5 3 2 2 3 45 7 103 2 3 45 7 104 tf 10-2 2 10 10-2 2 10 2 3 45 7 103 2 3 45 7 104 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 6 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 102 7 5 104 VCC = 1800V, VGE = ±15V RG(on) = 1.6Ω, LS = 100nH Tj = 150°C, Inductive load lrr 7 5 3 2 REVERSE RECOVERY TIME (µs) 2 lrr 2 REVERSE RECOVERY TIME (µs) 3 3 REVERSE RECOVERY CURRENT (A) 3 2 101 7 5 3 2 103 7 5 3 2 101 7 5 3 2 103 7 5 3 2 100 7 5 3 2 trr 102 7 5 3 2 100 7 5 3 2 trr 102 7 5 3 2 10-1 2 10 2 3 45 7 103 2 3 45 101 7 104 10-1 2 10 2 3 45 7 103 2 3 45 7 104 101 EMITTER CURRENT (A) EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 Rth(j–c)Q = 8.0K/kW Rth(j–c)R = 15.0K/kW 1.0 0.8 Z th( j –c ) ( t ) = Ri [ K/kW] : τ i [sec] : Σ R 1–exp i i=I n – t ti   0.6 1 0.0096 0.0001 2 0.1893 0.0058 3 0.4044 0.0602 4 0.3967 0.3512 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 7 REVERSE RECOVERY CURRENT (A) VCC = 1800V, VGE = ±15V RG(on) = 1.6Ω, LS = 100nH Tj = 125°C, Inductive load 7 5   PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules REVERSE BIAS SAFE OPERATING AREA (RBSOA) 4000 VCC ≤ 2500V, VGE = ±15V Tj = 150°C, RG(off) = 5.6Ω 20 SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) VCC ≤ 2500V, VGE = ±15V RG(on) = 1.6Ω, RG(off) = 5.6Ω Tj = 150°C COLLECTOR CURRENT (A) 3000 COLLECTOR CURRENT (kA) 15 2000 10 1000 5 0 0 1000 2000 3000 4000 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR-EMITTER VOLTAGE (V) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 4000 VCC ≤ 2500V, di/dt < 9kA/µs Tj = 150°C REVERSE RECOVERY CURRENT (A) 3000 2000 1000 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) Mar. 2009 8