CM150DU-12H

MITSUBISHI IGBT MODULES CM150DU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM150DU-12H ● IC ................................................................... 150A ● VCES .......................................................... 600V ● Insulated Type ● 2-elements in a pack APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 94 7 17 80 ±0.25 23 23 2–φ6.5 MOUNTING HOLES 4 E2 G2 24 C2E1 E2 C1 18 G1E1 4 11 48 12 3–M5NUTS 12mm deep 16 2.5 25 2.5 16 13.5 E2 G2 TAB 7.5 4 #110. t=0.5 C2E1 E2 13 CM C1 G1 E1 30 –0.5 +1 LABEL 21.2 CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM150DU-12H HIGH POWER SWITCHING USE INSULATED TYPE (Tj = 25°C, unless otherwise specified) MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 600 ±20 150 300 150 300 600 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W °C °C Vrms N·m N·m g (Note 1) (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS Symbol ICES Item (Tj = 25°C, unless otherwise specified) Test Conditions VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 150A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 150A, VGE = 15V VCC = 300V, IC = 150A VGE = ±15V RG = 4.2Ω Resistive load IE = 150A, VGE = 0V IE = 150A, die / dt = –300A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 module) (Note 6) (Note 4) Tj = 25°C Tj = 125°C Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Min — 4.5 — — — — — — — — — — — — — — — — — Limits Typ — 6 — 2.4 2.6 — — — 300 — — — — — — 0.36 — — 0.07 Max 1 7.5 0.5 3.0 — 13.2 7.2 2 — 100 350 300 300 2.6 160 — 0.21 0.47 — Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W Note 1. 2. 3. 4. 5. 6. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM150DU-12H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 300 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 300 VCE = 10V COLLECTOR CURRENT IC (A) VGE=20 (V) Tj=25°C 15 14 13 250 200 150 100 50 0 250 200 150 100 50 0 12 11 10 9 8 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 VGE = 15V Tj = 25°C Tj = 125°C 4 10 Tj = 25°C 8 3 6 IC = 300A IC = 150A 2 IC = 60A 0 0 4 8 12 16 20 2 4 1 0 0 40 80 120 160 200 240 280 300 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 25°C 101 7 5 3 2 Cies 101 7 5 3 2 100 7 5 3 2 Coes 100 1.0 1.4 1.8 2.2 2.6 Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 EMITTER-COLLECTOR VOLTAGE VEC (V) 3 MITSUBISHI IGBT MODULES CM150DU-12H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) tf REVERSE RECOVERY TIME trr (ns) 7 5 Tj = 125°C SWITCHING TIMES (ns) 3 2 5 3 2 5 3 2 td(off) 102 7 5 3 2 102 7 5 3 2 trr lrr 101 7 5 3 2 td(on) tr 101 7 101 2 3 5 7 102 VCC = 300V VGE = ±15V RG = 4.2Ω 23 5 7 103 101 1 10 2 3 5 7 102 2 3 5 7 103 100 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.21K/W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.47K/W 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 150A 15 VCC = 200V VCC = 300V 10 5 0 0 100 200 300 400 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 102 103 –di/dt = 300A/µs 7 7 Tj = 25°C