CM150DU-34KA

MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE CM150DU-34KA ● IC ................................................................... 150A ● VCES .......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 (7.5) 14 93 ±0.25 14 TC measured point (7.5) 14 E2 G2 6 C2E1 E2 C1 48 ±0.25 (8.25) CM G1 E1 17.5 6 (18) CIRCUIT DIAGRAM 8.85 C2E1 E2 C1 25 3-M6 NUTS 4-φ6. 5 MOUNTING HOLES 25 21.5 2.5 25.7 4 0.5 2.8 7.5 8.5 0.5 0.5 0.5 18 7 18 7 18 +1.0 –0.5 29 22 LABEL (7) Feb. 2009 4 G1 E1 15 62 E2 G2 MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1700 ±20 150 300 150 300 1100 –40 ~ +150 –40 ~ +125 3500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A W °C °C Vrms N•m N•m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance Test conditions VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 150A, VGE = 15V VCE = 10V VGE = 0V VCC = 1000V, IC = 150A, VGE = 15V VCC = 1000V, IC = 150A VGE = ±15V RG = 2.1Ω, Inductive load IE = 150A IE = 150A, VGE = 0V, Tj = 25°C IE = 150A, VGE = 0V, Tj = 125°C IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips Tj = 25°C Tj = 125°C Min. — 4 — — — — — — — — — — — — — — — — — — — Limits Typ. — 5.5 — 3.2 3.8 — — — 675 — — — — — 7.7 — 2.2 — — 0.04 — Max. 1 7 0.5 4.0 — 21 3.6 1.1 — 450 200 550 800 600 — 4.6 — 0.11 0.18 — 0.07*3 Unit mA V µA V nF nC ns ns µC V V K/W Note 1. IE, IEM, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 300 TRANSFER CHARACTERISTICS (TYPICAL) 11 300 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR CURRENT IC (A) Tj = 25°C VGE = 20V 15 12 COLLECTOR CURRENT (A) 250 200 150 250 200 150 100 50 0 14 10 9 100 50 0 8 0 2 4 6 8 10 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 15V Tj = 25°C 5 Tj = 125°C 4 3 2 1 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 6 10 Tj = 25°C 8 6 IC = 300A 4 IC = 150A IC = 60A 2 0 50 100 150 200 250 300 0 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) EMITTER CURRENT IE (A) 7 5 3 2 Tj = 25°C 7 5 3 2 Cies 102 7 5 3 2 101 7 5 3 2 101 7 5 3 2 100 7 5 3 2 Coes Cres 100 1 2 3 4 5 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 EMITTER-COLLECTOR VOLTAGE VEC (V) 3 MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 SWITCHING TIMES (ns) tf td(off) td(on) Conditions: VCC = 1000V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 102 7 5 3 2 trr Irr Conditions: VCC = 1000V VGE = ±15V RG = 2.1Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 102 7 5 3 2 tr 101 1 10 101 1 10 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) EMITTER CURRENT IE (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) GATE-EMITTER VOLTAGE VGE (V) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.11K/ W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.18K/ W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 IC = 150A 16 VCC = 800V VCC = 1000V 12 10–1 10–1 7 5 3 2 7 5 3 2 8 10–2 10–2 Single Pulse TC = 25°C 4 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Feb. 2009 4