CM150DY-12NF

MITSUBISHI IGBT MODULES CM150DY-12NF HIGH POWER SWITCHING USE CM150DY-12NF ¡IC ................................................................... 150A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point (Base plate) 94 17 23 23 17 C2E1 E2 C1 E2 G2 4 G1 E1 12 2-φ6.5 MOUNTING HOLES 12 80±0.25 12 4 3-M5 NUTS 20 (14) 48 13 18 4 TAB #110. t=0.5 16 7 16 7 16 7.5 E2 G2 C2E1 E2 C1 G1 E1 29 +0.1 –0.5 LABEL 21.2 CIRCUIT DIAGRAM Mar.2003 MITSUBISHI IGBT MODULES CM150DY-12NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC’ =97°C*3 Pulse Pulse TC = 25°C Conditions Ratings 600 ±20 150 300 150 300 590 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W °C °C V N•m N•m g (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 150A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 300V, IC = 150A, VGE = 15V VCC = 300V, IC = 150A VGE1 = VGE2 = 15V RG = 4.2Ω, Inductive load switching operation IE = 150A IE = 150A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) Tc measured point is just under the chips Min. — 5 — — — — — — — — — — — — — — — — — — 4.2 Limits Typ. — 6 — 1.7 1.7 — — — 600 — — — — — 2.5 — — — 0.07 — — Max. 1 7.5 0.5 2.2 — 23 2.8 0.9 — 120 100 300 300 150 — 2.6 0.21 0.47 — 0.16*3 42 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω *1 : Tc measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : Tc’ measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Mar.2003 MITSUBISHI IGBT MODULES CM150DY-12NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) VGE = 20V 250 200 150 100 15 13 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 300 Tj = 25°C 12 4 VGE = 15V 3 11 2 10 50 0 8 0 2 4 6 8 9 10 1 Tj = 25°C Tj = 125°C 0 0 50 100 150 200 250 300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 10 Tj = 25°C 8 EMITTER CURRENT IE (A) 5 3 2 6 102 7 5 3 2 4 IC = 150A IC = 300A 2 IC = 60A 0 6 8 10 12 14 16 18 20 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 103 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) 7 5 Cies SWITCHING TIME (ns) 3 2 tf td(off) td(on) tr Conditions: VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 101 7 5 3 2 102 7 5 3 2 Coes Cres 100 7 5 3 2 101 7 5 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Mar.2003 MITSUBISHI IGBT MODULES CM150DY-12NF HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 Single Pulse TC = 25°C 10–1 7 5 3 2 10–1 7 5 3 2 102 7 5 3 2 Irr trr 101 1 10 2 3 5 7 102 Conditions: VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 25°C Inductive load 23 5 7 103 IGBT part: 10–2 Per unit base = 7 5 Rth(j– c) = 0.21°C/W FWDi part: 3 Per unit base = 2 Rth(j– c) = 0.47°C/W 10–3 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 150A VCC = 200V 16 VCC = 300V 12 8 4 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Mar.2003