CM150DY-24NF_09

MITSUBISHI IGBT MODULES CM150DY-24NF HIGH POWER SWITCHING USE CM150DY-24NF ¡IC ................................................................... 150A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point (Base plate) 94 17 23 23 17 C2E1 E2 C1 E2 G2 4 G1 E1 12 2-φ6.5 MOUNTING HOLES 12 80±0.25 12 4 3-M5 NUTS 20 (14) 48 13 18 4 TAB #110. t=0.5 16 7 16 7 16 7.5 C2E1 E2 C1 29 +1.0 –0.5 LABEL CIRCUIT DIAGRAM 1 G1 E1 21.2 E2 G2 Feb. 2009 MITSUBISHI IGBT MODULES CM150DY-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC’ = 110°C*3 Pulse Pulse TC = 25°C Conditions Ratings 1200 ±20 150 300 150 300 780 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W °C °C Vrms N•m N•m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 150A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 150A, VGE = 15V VCC = 600V, IC = 150A VGE = ±15V RG = 2.1Ω, Inductive load IE = 150A IE = 150A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) Case temperature measured point is just under the chips Tj = 25°C Tj = 125°C Min. — 6 — — — — — — — — — — — — — — — — — — 2.1 Limits Typ. — 7 — 1.8 2.0 — — — 1000 — — — — — 7.5 — — — 0.07 — — Max. 1 8 0.5 2.5 — 35 3 0.68 — 120 80 450 350 150 — 3.2 0.16 0.25 — 0.093*3 21 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V K/W K/W K/W K/W Ω *1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : Case temperature (Tc’) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Feb. 2009 2 MITSUBISHI IGBT MODULES CM150DY-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 300 250 VGE = 20V 12 15 13 Tj = 25°C 4 VGE = 15V 3 200 150 100 11 2 10 50 9 0 0 2 4 6 8 10 1 Tj = 25°C Tj = 125°C 0 0 50 100 150 200 250 300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 10 Tj = 25°C EMITTER CURRENT IE (A) 8 5 3 2 6 102 7 5 3 2 4 IC = 150A IC = 300A IC = 60A 2 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 0 6 8 10 12 14 16 18 20 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies SWITCHING TIME (ns) 7 5 3 2 tf td(off) 101 7 5 3 2 102 7 5 3 2 td(on) tr Conditions: VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 Coes 100 7 5 3 2 101 7 5 3 2 Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM150DY-24NF HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 Single Pulse TC = 25°C 10–1 7 5 3 2 Irr trr Conditions: VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 25°C Inductive load 23 5 7 103 10–1 7 5 3 2 102 7 5 3 2 101 1 10 2 3 5 7 102 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.16K/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.25K/W –3 10 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 150A 16 VCC = 400V VCC = 600V 12 8 4 0 0 200 400 600 800 1000 1200 1400 GATE CHARGE QG (nC) Feb. 2009 4