CM150DY-34A

MITSUBISHI IGBT MODULES CM150DY-34A HIGH POWER SWITCHING USE CM150DY-34A ¡IC ................................................................... 150A ¡VCES ......................................................... 1700V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 （7.5） （7） 93±0.25 （7.5） 3-M6 NUTS （24） G2 （13.7） （5.2）（8.5） 4 48 ±0.25 6 62 E2 E1 C2E1 E2 C1 G1 （7） 21.5 25 25 24 4-φ6.5 MOUNTING HOLES 18 14 7 18 14 7 18 14 2.8 7.5 8.5 4 TAB #110 t=0.5 E2 G2 C2E1 LABEL 22.2 E2 C1 G1 E1 CIRCUIT DIAGRAM 30 +1.0 –0.5 17.5 6 （20） 15 30 Feb. 2009 1 MITSUBISHI IGBT MODULES CM150DY-34A HIGH POWER SWITCHING USE (Tj = 25°C, unless otherwise specified) ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Conditions G-E Short C-E Short DC, TC = 112°C*1 Pulse Operation Pulse TC = 25°C*1 (Note 2) (Note 2) (Note 2) (Note 2) Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Ratings 1700 ±20 150 300 150 300 1600 –40 ~ +150 –40 ~ +125 3500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A W °C °C Vrms N•m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25°C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 150A, VGE = 15V VCE = 10V VGE = 0V VCC = 1000V, IC = 150A, VGE = 15V VCC = 1000V, IC = 150A VGE = ±15V RG = 3.2Ω, Inductive load IE = 150A IE = 150A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound applied (1/2 module)*1,*2 Tj = 25°C Tj = 125°C Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Min. — 5.5 — — — — — — — — — — — — — — — — — 3.2 Limits Typ. — 7.0 — 2.2 2.45 — — — 1000 — — — — — 15 — — — 0.02 — Max. 1 8.5 2.0 2.8 — 37 4.2 0.8 — 550 190 750 350 450 — 3.0 0.078 0.15 — 32 Unit mA V µA V nF nC ns µC V K/W Ω *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 2 MITSUBISHI IGBT MODULES CM150DY-34A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 300 Tj = 25°C VGE = 20V 300 TRANSFER CHARACTERISTICS (TYPICAL) 12 VCE = 10V COLLECTOR CURRENT IC (A) 250 200 COLLECTOR CURRENT IC (A) 15 13 250 200 150 100 50 0 11 150 100 50 8 0 0 2 4 6 8 9 10 10 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 15V 4 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 10 Tj = 25°C 8 3 6 IC = 300A IC = 150A 2 4 1 Tj = 25°C Tj = 125°C 0 100 200 300 2 IC = 60A 0 0 4 8 12 16 20 0 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 EMITTER CURRENT IE (A) 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25°C Tj = 125°C 7 5 3 2 Cies 101 7 5 3 2 102 7 5 3 2 100 7 5 3 2 Coes Cres VGE = 0V 101 0.5 1 1.5 2 2.5 3 3.5 4 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM150DY-34A HIGH POWER SWITCHING USE SWITCHING TIME td(on), tr, td(off), tf (ns) 7 5 tf 3 td(on) 2 102 7 5 3 2 SWITCHING TIME td(on), tr, td(off), tf (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. COLLECTOR CURRENT (TYPICAL) 103 td(off) HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. GATE RESISTANCE (TYPICAL) 104 Conditions: 7 VCC = 1000V 5 VGE = ±15V 3 IC = 150A Tj = 125°C 2 Inductive load td(off) 103 td(on) 7 5 3 2 tr 101 1 10 Conditions: VCC = 1000V VGE = ±15V RG = 3.2Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 tr tf 102 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) 102 7 5 3 2 SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) Eon Eoff Err SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 103 Conditions: VCC = 1000V VGE = ±15V 3 IC = 150A Tj = 125°C 2 Inductive load 7 5 Eon 101 7 5 3 2 102 7 5 3 2 100 1 10 Conditions: VCC = 1000V VGE = ±15V RG = 3.2Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 Eoff Err 101 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 100 7 5 3 2 10–1 7 5 3 2 102 7 5 3 2 trr Irr Conditions: VCC = 1000V VGE = ±15V RG = 3.2Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 Single Pulse Tc= 25°C Tc measured point is just under the chips 10–2 7 5 IGBT part: 3 Per unit base = Rth(j–c) = 0.078K/W 2 FWDi part: 101 1 10 Per unit base = Rth(j–c) = 0.15K/ W 10–3 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 TIME (s) EMITTER CURRENT IC (A) Feb. 2009 4 MITSUBISHI IGBT MODULES CM150DY-34A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 150A 16 VCC = 800V VCC = 1000V 12 8 4 0 0 500 1000 1500 GATE CHARGE QG (nC) Feb. 2009 5