CM150E3U-12H_09

MITSUBISHI IGBT MODULES CM150E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE CM150E3U-12H ● IC ................................................................... 150A ● VCES .......................................................... 600V ● Insulated Type ● 1-element in a pack APPLICATION Brake OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 94 7 17 23 80 ±0.25 23 4 2–φ6.5 MOUNTING HOLES 48 E2 G2 24 C2E1 E2 C1 4 11 TAB #110. t = 0.5 12 3-M5 NUTS 12mm deep 13.5 7.5 C2E1 E2 C1 30 +1 -0.5 LABEL 21.2 CIRCUIT DIAGRAM Feb. 2009 1 E2 G2 16 2.5 25 2.5 16 13 CM MITSUBISHI IGBT MODULES CM150E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE (Tj = 25°C, unless otherwise specified) MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 600 ±20 150 300 150 300 600 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W °C °C Vrms N·m N·m g (Note 1) (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. 5. 6. (Tj = 25°C, unless otherwise specified) Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Test Conditions VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 150A, VGE = 15V VCE = 10V VGE = 0V (Note 4) Tj = 25°C Tj = 125°C Min — 4.5 — — — — — — — — — — — — — — — — — — — — — Limits Typ — 6 — 2.4 2.7 — — — 300 — — — — — — 0.36 — — — — 0.36 — 0.07 Max 1 7.5 0.5 3.0 — 13.2 7.2 2 — 100 350 300 300 2.6 160 — 0.21 0.47 2.6 160 — 0.47 — Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC K/W K/W V ns µC K/W K/W VCC = 300V, IC = 150A, VGE = 15V VCC = 300V, IC = 150A VGE = ±15V RG = 4.2Ω Resistive load IE = 150A, VGE = 0V IE = 150A die / dt = –300A / µs Junction to case, IGBT part Thermal resistance (Note 5) Junction to case, FWDi part Forward voltage IF = 150A, Clamp diode part Reverse recovery time IF = 150A Reverse recovery charge die / dt = –300A / µs, Clamp diode part Thermal resistance (Note 5) Junction to case, Clamp diode part Case to heat sink, conductive grease applied Contact thermal resistance (Per 1/2 module) (Note 6) Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM150E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 300 VGE=20 (V) Tj=25°C 12 15 11 10 9 8 0 0 2 4 6 8 10 0 0 4 8 12 14 300 13 TRANSFER CHARACTERISTICS (TYPICAL) VCE = 10V COLLECTOR CURRENT IC (A) 250 200 150 100 50 COLLECTOR CURRENT IC (A) 250 200 150 100 50 Tj = 25°C Tj = 125°C 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 4 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 10 Tj = 25°C 8 3 6 IC = 300A IC = 150A 2 IC = 60A 0 0 4 8 12 16 20 2 4 1 0 0 50 100 150 200 250 300 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25°C 7 VGE = 0V 5 3 2 EMITTER CURRENT IE (A) 101 7 5 3 2 Cies 102 7 5 3 2 100 Coes 7 5 3 2 Cres 101 0.6 1.0 1.4 1.8 2.2 2.6 3.0 10–1 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM150E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 tf td(off) td(on) tr VCC = 300V VGE = ±15V RG = 4.2Ω 2 3 5 7 102 2 3 5 7 103 REVERSE RECOVERY TIME trr (ns) 7 Tj = 125°C 5 3 2 5 3 2 5 3 2 102 7 5 3 2 102 7 5 3 2 trr lrr 101 7 5 3 2 101 7 5 3 2 100 1 10 101 1 10 2 3 5 7 102 2 3 5 7 103 100 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.21K/W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.47K/W 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 150A 15 VCC = 200V VCC = 300V 10 5 0 0 100 200 300 400 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 102 103 –di/dt = 300A/µs 7 7 Tj = 25°C SWITCHING TIMES (ns)