CM150E3U-24H_09

MITSUBISHI IGBT MODULES CM150E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE CM150E3U-24H ● IC ................................................................... 150A ● VCES ....................................................... 1200V ● Insulated Type ● 1-element in a pack APPLICATION Brake OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93 ±0.25 14 14 14 TC measured point 48 ±0.25 CM 62 C2E1 E2 C1 CIRCUIT DIAGRAM C2E1 E2 C1 25 3-M6 NUTS 4-φ6.5 MOUTING HOLES 25 21.5 2.5 4 18 7 18 7 18 2.8 7.5 8.5 0.5 0.5 29 +1.0 –0.5 22 LABEL 1 4 Feb. 2009 E2 G2 E2 G2 6 MITSUBISHI IGBT MODULES CM150E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE (Tj = 25°C, unless otherwise specified) MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 150 300 150 300 890 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A A A W °C °C Vrms N·m N·m g (Note 1) (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. 5. 6. (Tj = 25°C, unless otherwise specified) Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Test Conditions VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 150A, VGE = 15V VCE = 10V VGE = 0V (Note 4) Tj = 25°C Tj = 125°C Min — 4.5 — — — — — — — — — — — — — — — — — — — — — Limits Typ — 6 — 2.9 2.85 — — — 560 — — — — — — 0.82 — — — — 0.82 — 0.04 Max 1 7.5 0.5 3.7 — 22 7.4 4.4 — 200 250 300 350 3.2 300 — 0.14 0.24 3.2 300 — 0.24 — Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC K/W K/W V ns µC K/W K/W VCC = 600V, IC = 150A, VGE = 15V VCC = 600V, IC = 150A VGE = ±15V RG = 2.1Ω Resistive load IE = 150A, VGE = 0V IE = 150A die / dt = –300A / µs Junction to case, IGBT part Thermal resistance (Note 5) Junction to case, FWDi part Forward voltage IF = 150A, Clamp diode part Reverse recovery time IF = 150A Reverse recovery charge dif / dt = –300A / µs, Clamp diode part Thermal resistance (Note 5) Junction to case, Clamp diode part Case to heat sink, conductive grease applied Contact thermal resistance (Per 1/2 module) (Note 6) Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM150E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 300 VGE = 20 (V) 15 300 12 TRANSFER CHARACTERISTICS (TYPICAL) VCE = 10V COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 250 Tj = 25°C 200 150 10 100 9 50 8 0 0 2 4 6 8 10 11 250 200 150 100 50 0 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE = 15V Tj = 25°C Tj = 125°C 4 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 10 Tj = 25°C 8 3 6 IC = 300A IC = 150A 2 IC = 60A 2 4 1 0 0 50 100 150 200 250 300 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25°C 7 5 3 2 VGE = 0V EMITTER CURRENT IE (A) 101 7 5 3 2 Cies 102 7 5 3 2 Coes Cres 100 7 5 3 2 101 1.0 1.5 2.0 2.5 3.0 3.5 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 3 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM150E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 tf td(off) td(on) tr REVERSE RECOVERY TIME trr (ns) 7 5 SWITCHING TIMES (ns) 3 2 5 3 2 5 3 2 102 7 5 3 2 trr 102 7 5 3 2 102 7 5 3 101 7 5 3 2 100 1 10 Tj = 125°C VCC = 600V VGE = ±15V RG = 2.1Ω 2 3 5 7 102 2 3 5 7 103 Irr 2 3 5 7 102 2 3 2 101 1 10 5 7 103 101 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.14K/W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.24K/W 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 150A VCC = 400V VCC = 600V 10 15 5 0 0 200 400 600 800 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 103 – di /dt = 300A /µs 7 7 Tj = 25°C