CM150RL-24NF

MITSUBISHI IGBT MODULES CM150RL-24NF HIGH POWER SWITCHING USE CM150RL-24NF ¡IC ................................................................... 150A ¡VCES ......................................................... 1200V ¡Insulated Type ¡7-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 135 (6.05) 17.5 10.5 26 10.5 110 ±0.5 26 10.5 (6.05) 11.7 (13) 18 18.7 B 1 8 10.5 A N 20 48.75 10.5 1 1 1 P 13.75 4-φ5.5 MOUNTING HOLES 30.5 46.3 25 25 (13) 11 6-M5 NUTS (6.05) WP VP UP 16.5 20 B 10.5 CN 78 ±0.5 110 Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B (SCREWING DEPTH) LABEL 4 24.1–0.5 26.5 13 +1 (6.05) U V W P UP-1 UP-2 B CN-7 CN-8 N CN-5 CN-6 U CN-3 CN-4 VP-1 VP-2 V WP-1 WP-2 W CN-1 CN-2 CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM150RL-24NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) INVERTER PART Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation G-E Short C-E Short DC, TC = 76°C*1 Pulse Pulse TC = 25°C Conditions Ratings 1200 ±20 150 300 150 300 890 Unit V V A A A A W (Note 2) (Note 2) BRAKE PART Symbol VCES VGES IC ICM PC (Note 3) VRRM IFM Parameter Collector-emitter voltage Gate-emitter voltage Collector current Maximum collector dissipation Repetitive peak reverse voltage Forward current G-E Short C-E Short DC, TC = 86°C*1 Pulse TC = 25°C Clamp diode part Clamp diode part Conditions Ratings 1200 ±20 75 150 520 1200 75 Unit V V A A W V A (Note 2) (COMMON RATING) Symbol Tj Tstg Viso — — — Parameter Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions Ratings –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 750 Unit °C °C Vrms N•m N•m g Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value Feb. 2009 2 MITSUBISHI IGBT MODULES CM150RL-24NF HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) INVERTER PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 150A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 150A, VGE = 15V VCC = 600V, IC = 150A VGE = ±15V RG = 2.1Ω, Inductive load IE = 150A IE = 150A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to heat sink, Thermal compound Applied (1/6 module)*2 Tj = 25°C Tj = 125°C Min. — 6 — — — — — — — — — — — — — — — — — 2.1 Limits Typ. — 7 — 2.1 2.4 — — — 675 — — — — — 5.8 — — — 0.051 — Max. 1 8 0.5 3.0 — 23 2 0.45 — 130 70 400 350 150 — 3.8 0.14 0.23 — 31 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V K/W K/W K/W Ω BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG VFM Rth(j-c)Q Rth(j-c)R RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 7.5mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 75A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 75A, VGE = 15V IF = 75A IGBT part*1 Clamp diode part*1 Tj = 25°C Tj = 125°C Min. — 6 — — — — — — — — — — 4.2 Limits Typ. — 7 — 2.1 2.4 — — — 338 — — — — Max. 1 8 0.5 3.0 — 11.5 1.0 0.23 — 3.8 0.24 0.36 42 Unit mA V µA V nF nF nF nC V K/W K/W Ω *1 : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 3 MITSUBISHI IGBT MODULES CM150RL-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 300 250 200 150 VGE = 20V 15 13 Tj = 25°C 12 4 VGE = 15V 3 2 11 100 50 0 10 9 0 2 4 6 8 10 1 Tj = 25°C Tj = 125°C 0 0 50 100 150 200 250 300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 10 Tj = 25°C 8 6 102 7 5 3 2 4 IC = 300A IC = 150A IC = 60A 0 6 8 10 12 14 16 18 20 2 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 td(off) tf Cies SWITCHING TIME (ns) 101 7 5 3 2 102 7 5 3 2 td(on) 100 7 5 3 2 Coes 101 7 5 3 2 tr Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 Conditions: VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 4 MITSUBISHI IGBT MODULES CM150RL-24NF HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25°C 3 Under the chip 2 10–1 7 5 3 2 10–1 7 5 3 2 Irr 102 7 5 3 2 trr Conditions: VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 101 1 10 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.14K/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.23K/W –3 10 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 102 SWITCHING LOSS (mJ/pulse) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 102 7 SWITCHING LOSS (mJ/pulse) Conditions: VCC = 600V 5 VGE = ±15V 3 RG = 2.1Ω Tj = 125°C 2 Inductive load C snubber at bus 101 7 7 5 3 2 Esw(on) 5 3 2 Esw(off) Esw(off) 101 7 5 3 2 Esw(on) 100 1 10 2 3 5 7 102 2 3 5 7 103 100 0 10 Conditions: VCC = 600V VGE = ±15V IC = 150A Tj = 125°C Inductive load C snubber at bus 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) RECOVERY LOSS vs. IE (TYPICAL) 102 7 RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 7 RECOVERY LOSS (mJ/pulse) RECOVERY LOSS (mJ/pulse) 5 3 2 5 3 2 Err Conditions: VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive load C snubber at bus 2 3 5 7 102 2 3 5 7 103 101 7 5 3 2 101 7 5 3 2 Conditions: VCC = 600V VGE = ±15V IE = 150A Tj = 125°C Inductive load C snubber at bus Err 100 1 10 100 0 10 2 3 5 7 101 2 3 5 7 102 EMITTER CURRENT IE (A) GATE RESISTANCE RG (Ω) Feb. 2009 5 MITSUBISHI IGBT MODULES CM150RL-24NF HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 150A 16 VCC = 400V VCC = 600V 12 8 4 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Feb. 2009 6