MITSUBISHI IGBT MODULES
CM150TU-12H
HIGH POWER SWITCHING USE INSULATED TYPE
A B F G E H E H G E S K R(4 - Mounting Holes)
L GuP EuP GvP EvP
D C
GwP EwP GuN EuN GvN EvN
TC Measured Point
u v
TC Measured M Point GwN EwN
w
N 5 - M5 NUTS E H J E J H E
K
TAB#110 t=0.5
P Q
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150TU-12H is a 600V (VCES), 150 Ampere SixIGBT Module.
Type CM Current Rating Amperes 150 VCES Volts (x 50) 12
P
GuP EuP U
GvP EvP V
GwP EwP W
GuN EuN N
GvN EvN
GwN EwN
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.21 3.54±0.01 4.02 3.15±0.01 0.43 0.91 0.47 0.85 0.91 Millimeters 107.0 90.0±0.25 102.0 80.0±0.25 11.0 23.0 12.0 21.7 23.0 Dimensions K L M N P Q R S Inches 0.15 0.67 1.91 0.03 0.32 1.02 0.22 Dia. 0.57 Millimeters 3.75 17.0 48.5 0.8 8.1 26.0 5.5 Dia. 14.4
Sep.1998
MITSUBISHI IGBT MODULES
CM150TU-12H
HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** Peak Emitter Current** Maximum Collector Dissipation (Tj < 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM150TU-12H -40 to 150 -40 to 125 600 ±20 150 300* 150 300* 600 2.5~3.5 2.5~3.5 680 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m Grams Vrms
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 15mA, VCE = 10V IC = 150A, VGE = 15V, Tj = 25°C IC = 150A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage* VCC = 300V, IC = 150A, VGE = 15V IE = 150A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6 2.4 2.6 300 – Max. 1 0.5 7.5 3.0 – – 2.6 Units mA µA Volts Volts Volts nC Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 150A, VGE1 = VGE2 = 15V, RG = 4.2Ω, Resistive Load Switching Operation IE = 150A, diE/dt = -300A/µs IE = 150A, diE/dt = -300A/µs VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.36 Max. 13.2 7.2 2 100 350 300 300 160 – Units nF nF nF ns ns ns ns µC µC
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT 1/6 Module Per Free-Wheel Diode 1/6 Module Per Module, Thermal Grease Applied Min. – – – Typ. – – 0.015 Max. 0.21 0.47 – Units °C/W °C/W °C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM150TU-12H
HIGH POWER SWITCHING USE INSULATED TYPE
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
300
COLLECTOR CURRENT, IC, (AMPERES)
240 180
VGE= 20V 12
COLLECTOR CURRENT, IC, (AMPERES)
14
240
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
15 13
300
VCE = 10V Tj = 25°C Tj = 125°C
5
VGE = 15V Tj = 25°C Tj = 125°C
4 3 2 1
180
11
120
10
120 60 0
60
9 8
0 0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0 0 4 8 12 16 20 0 60 120 180 240 300
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
103
Tj = 25°C
102
Tj = 25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
VGE = 0V
8
IC = 300A
EMITTER CURRENT, IE, (AMPERES)
101
6
IC = 150A
Cies
102
4 2
IC = 60A
100
Coes
Cres
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
100 0.6
1.0
1.4
1.8
2.2
2.6
3.0
10-1 10-1
100
101
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -300A/µsec Tj = 25°C
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
104
tf
REVERSE RECOVERY TIME, trr, (ns)
103
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 150A
16 12 8 4
SWITCHING TIME, (ns)
103
td(on) tr
td(off)
VCC = 200V VCC = 300V
102
trr Irr
101
102
VCC = 300V VGE = ±15V RG = 4.2 Ω Tj = 125°C
101 100
101
COLLECTOR CURRENT, IC, (AMPERES)
102
101 101
102
EMITTER CURRENT, IE, (AMPERES)
100 103
0 0 100 200 300 400
GATE CHARGE, QG, (nC)
Sep.1998
MITSUBISHI IGBT MODULES
CM150TU-12H
HIGH POWER SWITCHING USE INSULATED TYPE
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
10-3 101
10-2
10-1
100
101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-3 101
10-2
10-1
100
101
100
Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.21°C/W
100
Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.47°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
Sep.1998