MITSUBISHI IGBT MODULES
CM15MD-12H
MEDIUM POWER SWITCHING USE INSULATED TYPE
CM15MD-12H
¡IC ..................................................................... 15A ¡VCES ............................................................ 600V ¡Insulated Type ¡CIB Module 3φ Inverter+3φ Converter+Brake ¡UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics
OUTLINE DRAWING & CIRCUIT DIAGRAM
P P1 GU R S T B EU GV EV GW EW
Dimensions in mm
D
2.54 2.54 2.54 2.54
2.54 2.54 2.54
GB
GU
GV
GW E
7.5 8
8 12.28 7.62 7.62 7.62
GW EU EV GV EW GW GV GU GB E
N 2 - φ4.8 ±0.1 MOUNTING HOLES
U
V CIRCUIT DIAGRAM
W
P
P1
N
GU
9 ±0.1
54
64 ±0.5
9 ±0.1
LABEL
53 ±0.5
R
S
T
B
U
V
W
2 - φ4.8 ±0.2 GUIDE HOLE 8
26.5 ±0.3
26.5 ±0.3
32
2 1 (30°) t = 0.5 0.8 t = 0.5
16.5 5
+1.0 – 0.5
8
8
12.5 12.5 80 ±0.3 90 ±0.5
8
8
5.3
5
+1.0 – 0.5
MAIN CIRCUIT TERMINAL
CONTROL CIRCUIT TERMINAL
Note. Not use the guiding holes to mount on the cooling fin.
Feb.1999
MITSUBISHI IGBT MODULES
CM15MD-12H
MEDIUM POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS INVERTER PART
Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3)
(Tj = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation G – E Short C – E Short TC = 25°C PULSE TC = 25°C PULSE Tf = 25°C
Condition
(Note. 2)
(Note. 2)
Rating 600 ±20 15 30 15 30 45
Unit V V A A A A W
BRAKE PART
Symbol VCES VGES IC ICM PC (Note. 3) VRRM IFM (Note. 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum Collector dissipation Repetitive peak reverse voltage Forward current G – E Short C – E Short TC = 25°C PULSE Tf = 25°C Clamp diode part Clamp diode part Condition Rating 600 ±20 15 30 45 600 15 Unit V V A A W V A
(Note. 2)
CONVERTER PART
Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing Condition Rating 800 220 15 150 93 Unit V V A A A 2s
3φ rectifying circuit 1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge current
COMMON RATING
Symbol Tj Tstg Viso — — Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Condition Rating –40 ~ +150 –40 ~ +125 2500 1.47 ~1.96 60 Unit °C °C V N.m g
AC 1 min. Mounting M4 screw Typical value
Feb.1999
MITSUBISHI IGBT MODULES
CM15MD-12H
MEDIUM POWER SWITCHING USE INSULATED TYPE
ELECTRICAL CHARACTERISTICS INVERTER PART
Symbol ICES Parameter
(Tj = 25°C)
Test conditions VCE = VCES, VGE = 0V IC = 1.5mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 15A, VGE = 15V Tj = 150°C VCE = 10V VGE = 0V VCC = 300V, IC = 15A, VGE = 15V VCC = 300V, IC = 15A VGE1 = VGE2 = 15V RG = 42Ω Resistive load IE = 15A, VGE = 0V IE = 15A, VGE = 0V die / dt = – 30A / µs IGBT part, Per 1/6 module FWDi part, Per 1/6 module
Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-emitter cutoff current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td (on) Turn-on rise time tr td (off) Turn-off delay time tf Turn-off fall time VEC (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5)
Min. — 4.5 — — — — — — — — — — — — — — — —
Limits Typ. — 6 — 2.1 2.15 — — — 45 — — — — — — 0.04 — —
Max. 1 7.5 0.5 2.8 — 1.5 1.2 0.3 — 120 300 200 300 2.8 110 — 2.8 3.5
Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC °C/W °C/W
(Note. 4)
BRAKE PART
Symbol ICES VGE(th) IGES VCE(sat) Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Collector-to-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop VCE = VCES, VGE = 0V IC = 1.5mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 15A, VGE = 15V Tj = 150°C VCE = 10V VGE = 0V VCC = 300V, IC = 15A, VGE = 15V IF = 15A, Clamp diode part IGBT part Clamp diode part Condition Min. — 4.5 — — — — — — — — — — Limits Typ. — 6 — 2.1 2.15 — — — 45 — — — Max. 1 7.5 0.5 2.8 — 1.5 1.2 0.3 — 1.5 2.8 3.6 Unit mA V µA V nF nF nF nC V °C/W °C/W
(Note. 4)
Cies Coes Cres QG VFM Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5)
CONVERTER PART
Symbol Parameter VR = VRRM, Tj = 150°C IF = 15A Per 1/6 module Condition Min. — — — Limits Typ. — — — Max. 8 1.5 3.6 Unit mA V °C/W
Repetitive reverse current IRRM Forward voltage drop VFM Rth(j-f) (Note. 5) Thermal resistance
Note 1. 2. 3. 4. 5.
IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Thermal resistance is specified under following conditions. • The conductive greese applied, between module and fin. • Al plate is used as fin.
Feb.1999
MITSUBISHI IGBT MODULES
CM15MD-12H
MEDIUM POWER SWITCHING USE INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 30
COLLECTOR CURRENT IC (A)
TRANSFER CHARACTERISTICS (TYPICAL) 30
COLLECTOR CURRENT IC (A)
VGE=20 (V) 24 Tj=25°C
15
12
VCE = 10V 24
18
11
18
12
10 9 87
12
6
6 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 12 14 16 18 20
0
0
1
2
3
4
5
6
7
8
9 10
0
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 IC = 6A 8 10 12 14 16 18 20 IC = 15A IC = 30A Tj = 25°C
4
VGE = 15V Tj = 25°C Tj = 125°C
3
2
1
0
0
6
12
18
24
30
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE FORWARD CHARACTERISITICS (TYPICAL) 102
EMITTER CURRENT IE (A)
7 5 3 2
CAPACITANCE VS. VCE (TYPICAL) 101
CAPACITANCE Cies, Coes, Cres (nF)
7 5 3 2
Tj = 25°C
VGE = 0V
100
7 5 3 2
Cies Coes
101
7 5 3 2
10–1
7 5 3 2
Cres
100
0
0.8
1.6
2.4
3.2
4.0
10–2 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
Feb.1999
MITSUBISHI IGBT MODULES
CM15MD-12H
MEDIUM POWER SWITCHING USE INSULATED TYPE
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103
7 5
SWITCHING TIMES (ns)
tf
5 3 2
5 3 2
3 2
td(off) 102
7 5 3 2
102
7 5 3 2
td(on) VCC = 300V VGE = ±15V RG = 42Ω Tj = 125°C
2 3 5 7 101 2 3 5 7 102
Irr trr
100
7 5 3 2
tr
101 0 10
101 0 10
2
3
5 7 101
2
3
5 7 102
10–1
COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25°C
2 7 5 3 2 7 5 3 2 7 5 3 2
EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25°C
2 7 5 3 2 7 5 3 2 7 5 3 2
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – f)
100
Rth(j – f) = 2.8°C/ W
3 2
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – f)
100
Rth(j – f) = 3.5°C/ W
3 2
10–1
10–1
7 5 3 2 7 5 3 2
10–1
10–1
7 5 3 2 7 5 3 2
10–2
10–2
10–2
10–2
10–3
10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s)
10–3
10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s)
VGE – GATE CHARGE (TYPICAL) 20
GATE-EMITTER VOLTAGE VGE (V)
18 16 14 12 10 8 6 4 2 0 0
IC = 15A
VCC = 200V VCC = 300V
10
20
30
40
50
60
GATE CHARGE QG (nC)
Feb.1999
REVERSE RECOVERY CURRENT lrr (A)
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 101 – di/dt = 30A / µs 7 7 Tj = 25°C
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