CM15TF-12H

MITSUBISHI IGBT MODULES CM15TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B L GuP SuP P K GvP SvP K GwP SwP M T - DIA. (2 TYP.) D H N U V W J E GuN SuN GvN SvN GwN SwN Q S C TAB #110, t = 0.5 S Q S P TAB #250, t = 0.8 G N F R P Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM15TF-12H is a 600V (VCES), 15 Ampere Six-IGBT Module. Type CM Current Rating Amperes 15 VCES Volts (x 50) 12 GuP (EuP) U GvP (EvP) V GwP (EwP) W GuN (EuN) N GvN (EvN) GwN (EwN) Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 3.54 2.99±0.01 2.52 1.54 0.98 0.90 0.87 0.75 0.71 Millimeters 90.0 76.0±0.2 64.0 39.0 25.0 23.0 22.0 19.0 18.0 Dimensions K L M N P Q R S T Inches 0.67 0.63 0.59 0.56 0.51 0.43 0.26 0.24 0.22 Dia. Millimeters 17.0 16.0 15.0 14.1 13.0 11.0 6.5 6.0 Dia. 5.5 Sep.1998 MITSUBISHI IGBT MODULES CM15TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – Viso CM15TF-12H –40 to +150 –40 to +125 600 ±20 15 30* 15 30* 100 1.47 ~ 1.96 150 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m Grams Vrms Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 1.5mA, VCE = 10V IC = 15A, VGE = 15V IC = 15A, VGE = 15V, Tj = 150°C Total Gate Charge Emitter-Collector Voltage VCC = 300V, IC = 15A, VGE = 15V IE = 15A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.1 2.15 45 – Max. 1.0 0.5 7.5 2.8** – – 2.8 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 15A, diE/dt = –30A/µs IE = 15A, diE/dt = –30A/µs VCC = 300V, IC = 15A, VGE1 = VGE2 = 15V, RG = 42Ω VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.04 Max. 1.5 0.5 0.3 120 300 200 300 110 – Units nF nF nF ns ns ns ns ns µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 1.30 3.50 0.092 Units °C/W °C/W °C/W Sep.1998 MITSUBISHI IGBT MODULES CM15TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 30 COLLECTOR CURRENT, IC, (AMPERES) 30 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V 15 12 VCE = 10V Tj = 25°C Tj = 125°C 5 VGE = 15V Tj = 25°C Tj = 125°C 4 20 20 11 3 10 10 9 7 8 10 2 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 0 0 10 20 30 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) EMITTER CURRENT, IE, (AMPERES) 102 CAPACITANCE, Cies, Coes, Cres, (nF) 101 Tj = 25°C 8 Cies IC = 30A 100 Coes 6 IC = 15A 101 4 10-1 Cres 2 IC = 6A VGE = 0V 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-2 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE, VGE 103 103 REVERSE RECOVERY TIME, t rr, (ns) 101 20 IC = 15A SWITCHING TIME, (ns) tf 16 VCC = 200V 12 102 td(off) td(on) 102 Irr t rr 100 VCC = 300V 8 tr VCC = 300V VGE = ±15V RG = 42Ω Tj = 125°C di/dt = -30A/µsec Tj = 25°C 4 101 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 10-1 102 0 0 10 20 30 40 50 60 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM15TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 1.3°C/W 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 3.5°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998