CM200DU-12NFH

MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE CM200DU-12NFH ¡IC ................................................................... 200A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 94 7 17 80 ±0.25 23 23 2–φ6.5 MOUNTING HOLES 4 E2 G2 24 C2E1 E2 C1 18 G1E1 4 11 48 12 3–M5NUTS 12mm deep 16 2.5 25 2.5 16 13.5 E2 G2 TAB 7.5 4 #110. t=0.5 C2E1 E2 13 CM C1 G1 E1 30 –0.5 +1 LABEL 21.2 CIRCUIT DIAGRAM Feb. 2009 MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso — — — (Tj = 25°C, unless otherwise specified) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4 Conditions (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value Ratings 600 ±20 200 400 200 400 590 830 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current (Tj = 25°C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE = ±15V RG = 6.3Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) Case temperature measured point is just under the chips (1/2 module) Tj = 25°C Tj = 125°C Min. — 5 — — — — — — — — — — — — — — — — — — 3.1 Limits Typ. — 6 — 2.0 1.95 — — — 1240 — — — — — 3.5 — — — 0.07 — — Max. 1 7 0.5 2.7 — 55 3.6 2.0 — 250 150 500 150 150 — 2.6 0.21 0.35 — 0.15*3 31 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V K/W K/W K/W K/W Ω Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance *1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : Case temperature (TC’) measured point is just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. No short circuit capability is designed. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3 400 COLLECTOR CURRENT IC (A) 350 300 250 13 15 VGE = 20V 11 10 Tj = 25°C 9.5 9 8.5 8 VGE = 15V 2.5 2 1.5 1 0.5 200 150 100 50 0 7 7.5 Tj = 25°C Tj = 125°C 0 50 100 150 200 250 300 350 400 COLLECTOR CURRENT IC (A) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 6 8 10 12 14 Tj = 25°C EMITTER CURRENT IE (A) 5 3 2 IC = 400A IC = 200A IC = 80A 102 7 5 3 2 Tj = 25°C Tj = 125°C 0 0.5 1 1.5 2 2.5 3 16 18 20 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies SWITCHING TIME (ns) 7 5 3 2 td(off) td(on) tf tr Conditions: VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 101 7 5 3 2 102 7 5 3 2 100 7 5 3 2 Coes Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 101 1 10 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part ) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 Single Pulse TC = 25°C 10–1 7 5 3 2 10–1 7 5 3 2 102 7 5 3 2 trr Irr 101 1 10 2 3 5 7 102 Conditions: VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 25°C Inductive load 23 5 7 103 10–2 7 5 3 Per unit base = 2 10–2 7 5 3 2 Rth(j–c) = 0.21K/W 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse TC = 25°C 10–1 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 200A 16 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 3 2 VCC = 200V VCC = 300V 10–1 7 5 3 2 12 8 10–2 7 5 3 Per unit base = 2 10–2 7 5 3 2 4 Rth(j–c) = 0.35K/W 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 0 0 200 400 TIME (s) 800 1200 1600 600 1000 1400 1800 GATE CHARGE QG (nC) Feb. 2009 4