CM200DU-24F

MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE CM200DU-24F ¡IC ................................................................... 200A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93 ±0.25 14 14 Tc measured point 14 RTC E2 G2 6 C2E1 ±0.25 E2 RTC C1 G1 E1 6 48 CM CIRCUIT DIAGRAM C2E1 E2 C1 25 3-M6 NUTS 4-φ6. 5 MOUNTING HOLES 25 21.5 2.5 4 18 7 18 7 18 2.8 7.5 8.5 0.5 0.5 0.5 0.5 29 +1.0 –0.5 22 LABEL Aug. 1999 4 G1 E1 15 62 E2 G2 MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE ( Note 1) IEM ( Note 1) PC ( Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 200 400 200 400 830 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A W °C °C V N•m N•m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr ( Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V VGE = VCES, VCE = 0V Tj = 25°C IC = 200A, VGE = 15V Tj = 125 °C VCE = 10V VGE = 0V VCC = 600V, I C = 200A, VGE = 15V VCC = 600V, IC = 200A VGE1 = VGE2 = 15V RG = 1.6Ω, Inductive load switching operation IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compoundapplied*2 (1/2 module) Tc measured point is just under the chips Min. — 5 — — — — — — — — — — — — — — — — — — 1.6 Limits Typ. — 6 — 1.8 1.9 — — — 2200 — — — — — 12.2 — — — 0.04 — — Max. 1 7 40 2.4 — 78 3.4 2.0 — 300 80 500 300 200 — 3.2 0.15 0.18 — 0.091V3 16 Unit mA V µA V nF nC ns ns µC V °C/W Ω Contact thermal resistance Thermal resistance External gate resistance Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Aug. 1999 MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 9.5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3 VGE = 15V Tj = 25°C 2.5 Tj = 125°C 2 1.5 1 0.5 0 400 COLLECTOR CURRENT IC (A) Tj = 25°C VGE = 20V 350 300 250 200 15 11 10 9 8.5 150 100 8 50 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 100 200 300 400 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 5 Tj = 25°C Tj = 25°C 4 3 IC = 400A 2 IC = 200A IC = 80A 102 7 5 3 2 1 0 6 8 10 12 14 16 18 20 101 0.5 1 1.5 2 2.5 3 3.5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 td(off) 5 tf 3 2 7 5 3 2 Cies SWITCHING TIMES (ns) td(on) 101 7 5 3 2 102 tr Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 Coes Cres 100 7 5 3 2 101 7 5 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Aug. 1999 MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) 103 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.15°C/ W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.18°C/ W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 102 7 5 3 2 Irr trr Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 Single Pulse TC = 25°C 101 1 10 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 200A VCC = 400V VCC = 600V 500 1000 1500 2000 2500 3000 GATE CHARGE QG (nC) Aug. 1999