CM200DU-24H_09

MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE CM200DU-24H ● IC ................................................................... 200A ● VCES ....................................................... 1200V ● Insulated Type ● 2-elements in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 (7.5) 14 93 ±0.25 14 TC measured point (7.5) 14 E2 G2 C2E1 E2 G2 E2 C1 6 48 ±0.25 (8.25) CM G1 E1 17.5 6 (18) CIRCUIT DIAGRAM 8.85 C2E1 E2 C1 25 3-M6 NUTS 4-φ6. 5 MOUNTING HOLES 25 21.5 2.5 25.7 4 0.5 2.8 7.5 8.5 (7) 0.5 0.5 18 7 18 7 18 0.5 +1.0 –0.5 29 22 LABEL Feb. 2009 1 4 G1 E1 15 62 MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 200 400 200 400 1130 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A A A W °C °C Vrms N·m N·m g (Note 1) (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES Item Test Conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = ±15V RG = 1.6Ω Resistive load IE = 200A, VGE = 0V IE = 200A, die / dt = –400A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 module) (Note 6) (Note 4) Tj = 25°C Tj = 125°C Min — 4.5 — — — — — — — — — — — — — — — — — Limits Typ — 6 — 2.9 2.85 — — — 750 — — — — — — 1.1 — — 0.04 Max 1 7.5 0.5 3.7 — 30 10.5 6 — 200 300 300 350 3.2 300 — 0.11 0.18 — Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Note 1. 2. 3. 4. 5. 6. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, IEM, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 400 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 400 COLLECTOR CURRENT IC (A) VGE = 20 (V) Tj = 25°C 15 12 VCE = 10V 300 11 200 10 100 9 8 0 0 2 4 6 8 10 300 200 100 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 0 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 VGE = 15V Tj = 25°C Tj = 125°C 4 10 Tj = 25°C 8 3 6 IC = 400A IC = 200A 2 IC = 80A 2 4 1 0 0 100 200 300 400 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 25°C VGE = 0V Cies 101 7 5 3 2 102 7 5 3 2 Coes Cres 100 7 5 3 2 101 1.0 1.5 2.0 2.5 3.0 3.5 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 3 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 tf td(off) td(on) tr Tj = 125°C VCC = 600V VGE = ±15V RG = 1.6Ω 2 3 5 7 102 2 3 5 7 103 5 3 2 5 3 3 2 102 7 5 3 2 102 7 5 3 2 Irr trr 2 101 7 5 3 2 101 1 10 101 1 10 2 3 5 7 102 2 3 5 7 103 100 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.11K/W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.18K/W 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 200A 15 VCC = 400V VCC = 600V 10 5 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 – di /dt = 400A /µs 7 7 Tj = 25°C SWITCHING TIMES (ns)