CM200DX-24A

MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE CM200DX-24A ¡IC ................................................................... 200A ¡VCES ......................................................... 1200V ¡Dual ¡Flatbase Type / Insulated Package / Copper (non-plating) base plate ¡RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM 152 137 121.7 110 ±0.5 99 94.5 Dimensions in mm (7.4) 1.2 (20.5) (4.2) 0.8 4-M6 NUTS 17 7 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 ＊58.4 (14) (14) 22 17 17 12 12 6 6 47 24 (3.81) TERMINAL t = 0.8 φ4.3 (13.5) (13.5) 39 50 ±0.5 57.5 62 1.15 0.65 23 48 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 6.5 (21.14) A ＊95 (102.25) 4-φ5.5 MOUNTING HOLES (3) 13 SECTION A ＊Pin positions with tolerance ＊41.66 ＊45.48 3.5 0 (7.75) ＊68.34 ＊72.14 ＊15 ＊18.8 (5.4) 12.5 (SCREWING DEPTH) 17 +1 -0.5 12.5 1.5 φ2.5 φ2.1 φ 0.5 LABEL E2(39) G2(38) Tr2 E2(47) Di2 E1C2 (24) Tolerance otherwise specified Division of Dimension 0.5 to to to to to 3 6 30 120 400 Tolerance ±0.2 ±0.3 ±0.5 ±0.8 ±1.2 C1(48) Di1 Tr1 Th NTC E1C2 (23) over over over 3 6 30 G1(15) TH1(1) TH2(2) E1(16) C1(22) over 120 CIRCUIT DIAGRAM Jan. 2009 MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) Tj Tstg Viso — — — — Parameter Collector-emitter voltage Gate-emitter voltage (Tj = 25°C, unless otherwise specified) Conditions G-E Short C-E Short (Note. 1) DC, TC = 90°C Collector current (Note. 4) Pulse (Note. 1, 5) Maximum collector dissipation TC = 25°C (Note. 1) Emitter current TC = 25°C (Note. 4) (Free wheeling diode forward current) Pulse Junction temperature Storage temperature Isolation voltage Terminals to base plate, f = 60Hz, AC 1 minute (Note. 8) Base plate flatness On the centerilne X, Y Torque strength Main terminals M6 screw Torque strength Mounting M5 screw Weight (Typical) Rating 1200 ±20 200 400 1250 200 400 –40 ~ +150 –40 ~ +125 2500 ±0 ~ +100 3.5 ~ 4.5 2.5 ~ 3.5 330 Unit V A W A °C Vrms μm N·m g Note. 8: The base plate flatness measurement points are in the following figure. Heat sink side Y + – + convex ： – concave ： X – + Heat sink side Jan. 2009 2 MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Parameter (Tj = 25°C, unless otherwise specified) Conditions VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 20mA, VCE = 10V Gate leakage current ±VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge IC = 200A, VGE = 15V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = ±15V, RG = 1.6Ω Inductive load (Note. 6) Tj = 25°C Tj = 125°C Chip (Note. 6) (IE = 200A) IE = 200A, VGE = 0V (Note. 6) Tj = 25°C Tj = 125°C Chip VEC(Note.3) Emitter-collector voltage Rlead Rth(j-c)Q Rth(j-c)R Rth(c-f) RGint RG IE = 200A, VGE = 0V Module lead resistance Main terminals-chip, per switch Thermal resistance per IGBT (Note. 1) per free wheeling diode (Junction to case) Contact thermal resistance Thermal grease applied (Case to heat sink) (Note. 1) per 1 module Internal gate resistance TC = 25°C, per switch External gate resistance Min. — 6 — — — — — — — — — — — — — — — — — — — — — — 1.6 Limits Typ. — 7 — 2.0 2.2 1.9 — — — 1000 — — — — — 8 2.6 2.16 2.5 1.6 — — 0.015 0 — Max. 1 8 0.5 2.6 — — 35 3.0 0.68 — 130 100 450 600 150 — 3.4 — — — 0.10 0.19 — — 16 Unit mA V μA V nF nC ns μC V mΩ K/W (Note. 2) Ω NTC THERMISTOR PART Symbol R ΔR/R B(25/50) P25 Note.1: 2: 3: 4: 5: 6: Parameter Zero power resistance Deviation of resistance B constant Power dissipation Conditions TC = 25°C TC = 100°C, R100 = 493Ω Approximate by equation TC = 25°C (Note. 7) Min. 4.85 –7.3 — — Limits Typ. 5.00 — 3375 — Max. 5.15 +7.8 — 10 Unit kΩ % K mW Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K). IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCE(sat) and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K] Jan. 2009 3 MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE Chip Location (Top view) Dimensions in mm (tolerance: ±1mm) (152) (121.7) (110) 0 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 0 16.2 47 Di 2 24 (62) (50) 27.9 36.5 48 Tr2 Th Di 1 Tr1 23 26.2 39.7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 37.1 38.9 41.5 Each mark points the center position of each chip. Tr*: IGBT, Di*: FWDi, Th: NTC thermistor 76.6 LABEL SIDE 0 Jan. 2009 4 MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE C1 C1(C1s) C1(C1s) C1 IC VGE = 0V G1 E1(E1s) V VGE = 15V G1 E1(E1s) E1C2 VGE = 0V G2 E2(E2s) E1C2 VGE = 15V G2 E2(E2s) IC E2 Tr2 V E2 Tr1 VCE(sat) test circuit C1 C1(C1s) C1(C1s) C1 IE VGE = 0V G1 E1(E1s) V VGE = 0V G1 E1(E1s) E1C2 VGE = 0V G2 E2(E2s) E1C2 VGE = 0V G2 E2(E2s) IE E2 Di2 V E2 Di1 VEC test circuit Arm IE 0V Load VGE 90% 0% IE trr –VGE + +VGE 0V –VGE VCC IC 90% 0A t RG VGE VCE IC 0A td(on) tr td(off) tf Irr 10% 1/2 ✕ Irr Qrr = 1/2 ✕ Irr ✕ trr Switching time test circuit and waveforms trr, Qrr test waveform Jan. 2009 5 MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR CURRENT IC (A) VGE = 20V 15 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 400 Tj = 25°C 13 4 3.5 3 2.5 2 1.5 1 0.5 0 0 VGE = 15V 300 12 200 11 100 10 9 0 0 1 2 3 4 5 6 7 8 9 10 Tj = 25°C Tj = 125°C 100 200 300 400 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 Tj = 25°C 8 6 EMITTER CURRENT IE (A) 102 7 5 3 2 4 IC = 400A 2 IC = 200A IC = 80A 0 6 8 10 12 14 16 18 20 101 Tj = 25°C Tj = 125°C 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part 102 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 3 2 SWITCHING TIME (ns) Cies CAPACITANCE (nF) tf td(off) 101 7 5 3 2 102 7 5 3 2 Coes td(on) tr Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 100 7 5 3 2 101 7 5 3 2 Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Jan. 2009 6 MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 tf 3 2 td(off) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 102 7 SWITCHING LOSS (mJ/pulse) SWITCHING TIME (ns) 5 VGE = ±15V 3 RG = 1.6Ω 2 Conditions: VCC = 600V Tj = 125°C Inductive load 102 td(on) 7 5 3 2 tr Conditions: VCC = 600V VGE = ±15V IC = 200A Tj = 125°C Inductive load 2 3 5 7 101 2 3 5 7 102 101 7 5 3 2 Eoff Err Eon 2 3 5 7 102 2 3 5 7 103 101 7 5 3 2 100 100 100 1 10 GATE RESISTANCE RG (Ω) COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 102 7 SWITCHING LOSS (mJ/pulse) Eon 5 3 2 Irr trr lrr (A), trr (ns) Eoff 102 7 5 3 2 101 Conditions: VCC = 600V 3 VGE = ±15V IC, IE = 200A 2 Tj = 125°C Inductive load 100 0 10 23 5 7 101 5 7 Err 101 7 5 3 2 2 3 5 7 102 100 1 10 Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 GATE RESISTANCE RG (Ω) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100 7 Single pulse, 5 TC = 25°C 3 2 7 5 3 2 GATE-EMITTER VOLTAGE VGE (V) IC = 200A VCC = 400V 15 VCC = 600V 10 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j–c) 10–1 10–2 7 5 3 2 Inverter IGBT part 5 0 0 200 400 600 800 1000 1200 1400 GATE CHARGE QG (nC) 10–3 : Per unit base = Rth(j–c) = 0.10K/W Inverter FWDi part : Per unit base = Rth(j–c) = 0.19K/W 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 TIME (s) Jan. 2009 7