MITSUBISHI IGBT MODULES
CM200DY-24A
HIGH POWER SWITCHING USE
CM200DY-24A
¡IC ................................................................... 200A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack
APPLICATION AC drive inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94 17 23 23 17
C2E1
E2
C1
E2 G2
4
G1 E1
4
12 2-φ6.5 MOUNTING HOLES
12 80±0.25
12
3-M5 NUTS 12.5 (SCREWING DEPTH)
20 (14)
48
13
18
4
TAB #110. t=0.5 16 7 16 7 16
7.5 E2 G2
C2E1
E2
C1
G1 E1
29 +1.0 –0.5
LABEL
21.2
CIRCUIT DIAGRAM
Feb. 2009 1
MITSUBISHI IGBT MODULES
CM200DY-24A
HIGH POWER SWITCHING USE
(Tj = 25°C, unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current
Conditions G-E Short C-E Short DC, TC = 84°C*1 Pulse Pulse TC = 25°C*1
(Note 2) (Note 2)
Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight
Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value
Ratings 1200 ±20 200 400 200 400 1340 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310
Unit V V A A W °C °C Vrms N•m g
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter
(Tj = 25°C, unless otherwise specified)
Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = ±15V RG = 1.6Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound Applied (1/2 module)*1,*2 Tj = 25°C Tj = 125°C
Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance
Min. — 6 — — — — — — — — — — — — — — — — — 1.6
Limits Typ. — 7 — 2.1 2.4 — — — 1000 — — — — — 9.0 — — — 0.022 —
Max. 1 8 0.5 3.0 — 35 3 0.68 — 130 100 450 350 150 — 3.8 0.093 0.17 — 21
Unit mA V µA V
nF nC
ns
ns µC V K/W Ω
*1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C.
Feb. 2009 2
MITSUBISHI IGBT MODULES
CM200DY-24A
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
400 350 300 250 200
VGE = 20V
15 13
Tj = 25°C 12
4
VGE = 15V
3
2
11 150 100 50 0 0 2 4 6 8 10 9 10
1 Tj = 25°C Tj = 125°C 0 0 50 100 150 200 250 300 350 400 COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103
7
10
Tj = 25°C
EMITTER CURRENT IE (A)
8
5 3 2
6 IC = 400A IC = 200A 2 IC = 80A 0 6 8 10 12 14 16 18 20
102
7 5 3 2
4
Tj = 25°C Tj = 125°C 0 1 2 3 4 5
101
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102
CAPACITANCE Cies, Coes, Cres (nF)
7 5 3 2
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies
SWITCHING TIME (ns)
7 td(off) 5 tf 3 2 7 5 3 2
101
7 5 3 2
102 td(on) tr Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load
2 3 5 7 102 2 3 5 7 103
Coes
100
7 5 3 2
101
7 5 3 2
Cres
VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
100 1 10
COLLECTOR CURRENT IC (A)
Feb. 2009 3
MITSUBISHI IGBT MODULES
CM200DY-24A
HIGH POWER SWITCHING USE
REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A)
7 5 3 2
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c’) (ratio)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse 7 5 TC = 25°C 3 Under the chip
2
Irr trr Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 25°C Inductive load 23 5 7 103
10–1
7 5 3 2
10–1
7 5 3 2
102
7 5 3 2
101 1 10
2
3
5 7 102
IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.093K/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.17K/W –3 10
10–2
7 5 3 2
10–3 10–5 2 3 5 710–4 2 3 5 7 10–3
EMITTER CURRENT IE (A)
TIME (s)
SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) Conditions: VCC = 600V 5 VGE = ±15V 3 RG = 1.6Ω Tj = 125°C 2 Inductive load C snubber at bus 101
7 7 5 3 2
SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 102
7
102
SWITCHING LOSS (mJ/pulse)
SWITCHING LOSS (mJ/pulse)
5 3 2
Esw(on)
Esw(off)
Esw(off)
101
7 5 3 2
Esw(on)
100 1 10
2
3
5 7 102
2
3
5 7 103
100 0 10
Conditions: VCC = 600V VGE = ±15V IC = 200A Tj = 125°C Inductive load C snubber at bus
2 3 5 7 101 2 3 5 7 102
COLLECTOR CURRENT IC (A)
GATE RESISTANCE RG (Ω)
RECOVERY LOSS vs. IE (TYPICAL) 102
RECOVERY LOSS (mJ/pulse)
RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102
7
RECOVERY LOSS (mJ/pulse)
VCC = 600V 5 VGE = ±15V 3 RG = 1.6Ω Tj = 125°C 2 Inductive load C snubber at bus 101
7 5 3 2
7 Conditions:
5 3 2
Err
101
7 5 3 2
Conditions: VCC = 600V VGE = ±15V IE = 200A Tj = 125°C Inductive load C snubber at bus Err
100 1 10
2
3
5 7 102
2
3
5 7 103
100 0 10
2
3
5 7 101
2
3
5 7 102
EMITTER CURRENT IE (A)
GATE RESISTANCE RG (Ω)
Feb. 2009 4
MITSUBISHI IGBT MODULES
CM200DY-24A
HIGH POWER SWITCHING USE
GATE CHARGE CHARACTERISTICS (TYPICAL) 20
GATE-EMITTER VOLTAGE VGE (V)
IC = 200A VCC = 400V 16 VCC = 600V
12
8
4
0
0
200 400 600 800 1000 1200 1400 GATE CHARGE QG (nC)
Feb. 2009 5
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