CM200E3U-12H

MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE CM200E3U-12H ● IC ................................................................... 200A ● VCES .......................................................... 600V ● Insulated Type ● 1-element in a pack APPLICATION Brake OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 94 7 17 23 80 ±0.25 23 4 2–φ6.5 MOUNTING HOLES 48 E2 G2 24 C2E1 E2 C1 4 11 TAB #110. t = 0.5 12 3-M5 NUTS 12mm deep 13.5 7.5 C2E1 E2 C1 30 +1 -0.5 LABEL 21.2 CIRCUIT DIAGRAM Feb. 2009 1 E2 G2 16 2.5 25 2.5 16 13 CM MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE (Tj = 25°C, unless otherwise specified) MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 600 ±20 200 400 200 400 650 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W °C °C Vrms N·m N·m g (Note 1) (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. 5. 6. (Tj = 25°C, unless otherwise specified) Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Test Conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 200A, VGE = 15V VCE = 10V VGE = 0V (Note 4) Tj = 25°C Tj = 125°C Min — 4.5 — — — — — — — — — — — — — — — — — — — — — Limits Typ — 6 — 2.4 2.6 — — — 400 — — — — — — 0.48 — — — — 0.48 — 0.07 Max 1 7.5 0.5 3.0 — 17.6 9.6 2.6 — 150 400 300 300 2.6 160 — 0.19 0.35 2.6 160 — 0.35 — Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC K/W K/W V ns µC K/W K/W VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE = ±15V RG = 3.1Ω Resistive load IE = 200A, VGE = 0V IE = 200A die / dt = –400A / µs Junction to case, IGBT part Thermal resistance (Note 5) Junction to case, FWDi part Forward voltage IF = 200A, Clamp diode part Reverse recovery time IF = 200A Reverse recovery charge dif / dt = –400A / µs, Clamp diode part Thermal resistance (Note 5) Junction to case, Clamp diode part Case to heat sink, conductive grease applied Contact thermal resistance (Per 1/2 module) (Note 6) Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 500 Tj=25°C 15 14 VGE=20 (V) 13 12 11 10 100 9 8 0 0 2 4 6 8 10 400 VCE = 10V TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) 400 COLLECTOR CURRENT IC (A) 300 300 200 200 100 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 0 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE = 15V Tj = 25°C Tj = 125°C 4 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 10 Tj = 25°C 8 IC = 400A IC = 200A 4 3 6 2 1 2 IC = 80A 0 0 4 8 12 16 20 0 0 100 200 300 400 500 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 7 5 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25°C 7 5 3 2 VGE = 0V EMITTER CURRENT IE (A) 101 Cies 7 5 3 2 101 7 5 3 2 Coes 100 7 5 3 2 Cres 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 3 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIMES (ns) tf td(off) 7 5 3 2 7 5 3 2 3 2 102 7 5 3 2 td(on) tr VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C 2 3 5 7 102 2 3 5 7 103 102 7 5 3 2 trr 100 7 5 3 101 1 10 101 1 10 –di/dt = 400A/µs Tj = 25°C 2 3 5 7 102 2 3 2 5 7 103 10–1 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.19K/W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.35K/W 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 200A VCC = 200V 15 VCC = 300V 10 5 0 0 100 200 300 400 500 600 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 101 lrr