CM200RL-12NF

MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE CM200RL-12NF ¡IC ................................................................... 200A ¡VCES ............................................................ 600V ¡Insulated Type ¡7-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 135 (6.05) 17.5 10.5 (13) 110 ±0.5 26 10.5 26 10.5 (6.05) 11.7 18 18.7 B 1 8 10.5 A N 20 48.75 10.5 1 1 1 P 13.75 4-φ5.5 MOUNTING HOLES 30.5 46.3 25 25 (13) 11 6-M5 NUTS (SCREWING DEPTH) (6.05) WP VP UP 16.5 20 B 10.5 CN 78 ±0.5 110 (6.05) LABEL 4 24.1–0.5 26.5 13 +1 U V W Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B P UP-1 UP-2 B CN-7 CN-8 N CN-5 CN-6 U CN-3 CN-4 VP-1 VP-2 V WP-1 WP-2 W CN-1 CN-2 CIRCUIT DIAGRAM Jun. 2004 MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25°C) INVERTER PART Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation G-E Short C-E Short DC, TC = 88°C*1 Pulse Pulse TC = 25°C Conditions Ratings 600 ±20 200 400 200 400 890 Unit V V A A A A W (Note 2) (Note 2) BRAKE PART Symbol VCES VGES IC ICM PC (Note 3) VRRM IFM Parameter Collector-emitter voltage Gate-emitter voltage Collector current Maximum collector dissipation Repetitive peak reverse voltage Forward current G-E Short C-E Short DC, TC = 99°C*1 Pulse TC = 25°C Clamp diode part Clamp diode part Conditions Ratings 600 ±20 100 200 540 600 100 Unit V V A A W V A (Note 2) (COMMON RATING) Symbol Tj Tstg Viso — — — Parameter Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions Ratings –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 750 Unit °C °C V N•m N•m g Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value Jun. 2004 MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS (Tj = 25°C) INVERTER PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V VGE = VGES, VCE = 0V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE1 = VGE2 = 15V RG = 3.1Ω, Inductive load switching operation IE = 200A IE = 200A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to fin, Thermal compound Applied (1/6 module)*2 Tj = 25°C Tj = 125°C Min. — 6 — — — — — — — — — — — — — — — — — 3.1 Limits Typ. — 7 — 1.7 1.7 — — — 800 — — — — — 4.8 — — — 0.051 — Max. 1 8 0.5 2.2 — 30 3.7 1.2 — 120 100 300 300 150 — 2.8 0.14 0.22 — 31 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W Ω BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG VFM Rth(j-c)Q Rth(j-c)R RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 10mA VGE = VGES, VCE = 0V IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 100A, VGE = 15V IF = 100A IGBT part*1 Clamp diode part*1 Tj = 25°C Tj = 125°C Min. — 6 — — — — — — — — — — 6.3 Limits Typ. — 7 — 1.7 1.7 — — — 400 — — — — Max. 1 8 0.5 2.2 — 15 1.9 0.6 — 2.8 0.23 0.41 63 Unit mA V µA V nF nF nF nC V °C/W °C/W Ω *1 : Tc measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause neglible temperature rise. Jun. 2004 MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 400 VGE = 20V 15 13 Tj = 25°C 12 4 VGE = 15V 300 3 200 11 2 100 8 0 0 2 4 6 8 10 9 10 1 Tj = 25°C Tj = 125°C 0 0 100 200 300 400 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 10 Tj = 25°C 8 6 102 7 5 3 2 4 IC = 200A IC = 400A 2 IC = 60A 0 6 8 10 12 14 16 18 20 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies 7 5 3 2 SWITCHING TIME (ns) tf td(off) td(on) tr Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 101 7 5 3 2 102 7 5 3 2 Coes Cres 100 7 5 3 2 101 7 5 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Jun. 2004 MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25°C 3 Under the chip 2 10–1 7 5 3 2 10–1 7 5 3 2 102 7 5 3 2 Irr trr Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 101 1 10 IGBT part: 10–2 Per unit base = 7 5 Rth(j– c) = 0.14°C/W FWDi part: 3 Per unit base = 2 Rth(j– c) = 0.22°C/W 10–3 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 101 7 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 102 7 Esw(off) SWITCHING LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) 5 3 2 5 3 2 Esw(on) 100 7 5 3 2 10–1 1 10 Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load C snubber at bus 2 3 5 7 102 2 3 5 7 103 101 7 5 3 2 Conditions: VCC = 300V VGE = ±15V IC = 200A Tj = 125°C Inductive load C snubber at bus Esw(on) Esw(off) 100 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) RECOVERY LOSS vs. IE (TYPICAL) 101 7 RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 101 7 RECOVERY LOSS (mJ/pulse) 5 3 2 RECOVERY LOSS (mJ/pulse) 5 3 2 Err Err 100 7 5 3 2 10–1 1 10 Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load C snubber at bus 2 3 5 7 102 2 3 5 7 103 100 7 5 3 2 10–1 0 10 Conditions: VCC = 300V VGE = ±15V IE = 200A Tj = 125°C Inductive load C snubber at bus 2 3 5 7 101 2 3 5 7 102 EMITTER CURRENT IE (A) GATE RESISTANCE RG (Ω) Jun. 2004 MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 200A VCC = 200V 15 VCC = 300V 10 5 0 0 200 400 600 800 1000 1200 GATE CHARGE QG (nC) Jun. 2004