CM200TU-12H

MITSUBISHI IGBT MODULES CM200TU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM200TU-12H ● IC ................................................................... 200A ● VCES .......................................................... 600V ● Insulated Type ● 6-elements in a pack ● UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CM N 11 21.7 E G P 11 E 21.7 G 11 14.4 E 17 3.75 107 90 ±0.25 23 12 12 4–φ5.5 MOUNTING HOLES (4) GuP EuP GvP EvP GwP EwP G G E G E G E GuN EuN GvN EvN GwN EwN 3.75 P GuP EuP GvP EvP GwP EwP 80 ±0.25 102 48.5 U 0.5 GuN EuN V GvN EvN W GwN EwN N U V W CIRCUIT DIAGRAM 12 5–M5NUTS TC measured point 2.8 11 23 21.7 12 23 11 12 0.8 11 4 TC measured point 29 –0.5 +1 21.7 7.1 LABEL 26 8.1 Feb. 2009 1 MITSUBISHI IGBT MODULES CM200TU-12H HIGH POWER SWITCHING USE INSULATED TYPE (Tj = 25°C, unless otherwise specified) MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 600 ±20 200 400 200 400 650 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 680 Unit V V A A A A W °C °C Vrms N·m N·m g (Note 1) (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value ELECTRICAL CHARACTERISTICS Symbol ICES Item (Tj = 25°C, unless otherwise specified) Test Conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE = ±15V RG = 3.1Ω Resistive load IE = 200A, VGE = 0V IE = 200A, die / dt = –400A / µs Junction to case, IGBT part (Per 1/6 module) Junction to case, FWDi part (Per 1/6 module) Case to heat sink, conductive grease applied (Per 1/6 module) (Note 6) (Note 4) Tj = 25°C Tj = 125°C Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Min — 4.5 — — — — — — — — — — — — — — — — — Limits Typ — 6 — 2.4 2.6 — — — 400 — — — — — — 0.48 — — 0.09 Max 1 7.5 0.5 3.0 — 17.6 9.6 2.6 — 150 400 300 300 2.6 160 — 0.19 0.35 — Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W Note 1. 2. 3. 4. 5. 6. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200TU-12H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 400 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 400 VCE = 10V 300 VGE=20 (V) Tj=25°C 15 14 13 300 12 11 10 200 200 100 9 8 0 0 2 4 6 8 10 100 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 0 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 Tj = 25°C 5 VGE = 15V Tj = 25°C Tj = 125°C 4 8 3 6 IC = 400A IC = 200A 2 IC = 80A 0 0 4 8 12 16 20 2 4 1 0 0 100 200 300 400 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 25°C VGE = 0V 101 7 5 3 2 Cies 102 7 5 3 2 Coes 100 7 5 3 2 Cres 101 0.6 1.0 1.4 1.8 2.2 2.6 3.0 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 3 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM200TU-12H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIMES (ns) tf td(off) 7 5 3 2 7 5 3 2 3 2 102 7 5 3 2 td(on) tr VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C 2 3 5 7 102 2 3 5 7 103 102 7 5 3 2 trr 100 7 5 3 101 1 10 101 1 10 –di/dt = 400A/µs Tj = 25°C 2 3 5 7 102 2 3 2 5 7 103 10–1 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.19K/W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.35K/W 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 200A 15 VCC = 200V 10 VCC = 300V 5 0 0 100 200 300 400 500 600 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 101 lrr