CM300DU-12F

MITSUBISHI IGBT MODULES CM300DU-12F HIGH POWER SWITCHING USE CM300DU-12F ¡IC ................................................................... 300A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93 ±0.25 14 14 Tc measured point 14 RTC E2 G2 6 (8.25) C2E1 E2 RTC C1 48 ±0.25 CM G1 E1 6 (18) CIRCUIT DIAGRAM C2E1 E2 C1 25 3-M6 NUTS 4-φ6. 5 MOUNTING HOLES 25 21.5 2.5 4 18 7 18 7 18 2.8 0.5 15.85 0.5 0.5 0.5 7.5 29 +1.0 –0.5 22 LABEL 8.5 Feb. 2009 4 G1 E1 15 62 E2 G2 MITSUBISHI IGBT MODULES CM300DU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 600 ±20 300 600 300 600 780 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A W °C °C Vrms N•m N•m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Test conditions VCE = VCES, VGE = 0V IC = 30mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 300A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 300A, VGE = 15V VCC = 300V, IC = 300A VGE = ±15V RG = 2.1Ω, Inductive load IE = 300A IE = 300A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips Tj = 25°C Tj = 125°C Min. — 5 — — — — — — — — — — — — — — — — — — 2.1 Limits Typ. — 6 — 1.6 1.6 — — — 1860 — — — — — 5.2 — — — 0.04 — — Max. 1 7 40 2.2 — 81 5.4 3.0 — 250 120 500 250 150 — 2.6 0.16 0.24 — 0.10*3 21 Unit mA V µA V nF nC ns ns µC V Contact thermal resistance Thermal resistance External gate resistance K/W Ω Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM300DU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) Tj=25°C VGE=20V COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 600 500 400 300 15 11 10 9.5 9 3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 200 400 600 8.5 200 100 0 8 7.5 0 0.5 1 1.5 2 2.5 3 3.5 4 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 Tj = 25°C 4 EMITTER CURRENT IE (A) 5 3 2 Tj = 25°C 3 IC = 600A IC = 300A IC = 120A 102 7 5 3 2 2 1 0 6 8 10 12 14 16 18 20 101 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Cies td(off) td(on) tf SWITCHING TIMES (ns) 101 7 5 3 2 102 7 5 3 2 Coes Cres tr 100 7 5 3 2 101 7 5 3 2 VGE = 0V Conditions: VCC = 300V VGE = ±15V RG = 2.1Ω Tj = 125°C 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM300DU-12F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.16K/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.24K/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 103 3 2 102 7 5 3 2 trr Irr Conditions: VCC = 300V VGE = ±15V RG = 2.1Ω Tj = 25°C 2 3 5 7 102 2 3 5 7 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 Single Pulse TC = 25°C 101 1 10 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 300A VCC = 200V VCC = 300V 500 1000 1500 2000 2500 GATE CHARGE QG (nC) Feb. 2009 4