CM300DU-12NFH

MITSUBISHI IGBT MODULES CM300DU-12NFH HIGH POWER SWITCHING USE CM300DU-12NFH ¡IC ................................................................... 300A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 (7.5) 14 93 ±0.25 14 TC measured point (7.5) 14 E2 G2 C2E1 E2 G2 E2 C1 6 48 ±0.25 (8.25) CM G1 E1 17.5 6 (18) CIRCUIT DIAGRAM 8.85 C2E1 E2 C1 25 3-M6 NUTS 4-φ6. 5 MOUNTING HOLES 25 21.5 2.5 25.7 4 0.5 2.8 7.5 8.5 (7) 0.5 0.5 18 7 18 7 18 0.5 29 +1.0 –0.5 22 LABEL Feb. 2009 4 G1 E1 15 62 MITSUBISHI IGBT MODULES CM300DU-12NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso — — — (Tj = 25°C, unless otherwise specified) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4 Conditions (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Ratings 600 ±20 300 600 300 600 780 1250 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A A A W W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current (Tj = 25°C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 30mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 300A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 300A, VGE = 15V VCC = 300V, IC = 300A VGE = ±15V RG = 4.2Ω, Inductive load IE = 300A IE = 300A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) Case temperature measured point is just under the chips (1/2 module) Tj = 25°C Tj = 125°C Min. — 5 — — — — — — — — — — — — — — — — — — 2.1 Limits Typ. — 6 — 2.0 1.95 — — — 1860 — — — — — 5.5 — — — 0.04 — — Max. 1 7 0.5 2.7 — 83 5.4 3.0 — 350 150 700 150 200 — 2.6 0.16 0.24 — 0.10*3 21 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V K/W K/W K/W K/W Ω Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance *1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : Case temperature (TC’) measured point is just under the chips. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. No short circuit capability is designed. Feb. 2009 2 MITSUBISHI IGBT MODULES CM300DU-12NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3 600 COLLECTOR CURRENT IC (A) 500 400 300 200 100 0 13 15 VGE = 20V 11 10 Tj = 25°C 9.5 9 8.5 8 VGE = 15V 2.5 2 1.5 1 0.5 7.5 7 Tj = 25°C Tj = 125°C 0 100 200 300 400 500 600 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 6 8 10 12 14 Tj = 25°C EMITTER CURRENT IE (A) 5 3 2 IC = 600A IC = 300A IC = 120A 102 7 5 3 2 Tj = 25°C Tj = 125°C 0 0.5 1 1.5 2 2.5 3 16 18 20 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies SWITCHING TIME (ns) 7 5 3 2 td(off) td(on) 101 7 5 3 2 102 7 5 3 2 Coes Cres tf tr Conditions: VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 100 7 5 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 101 1 10 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM300DU-12NFH HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part ) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 Single Pulse TC = 25°C 10–1 7 5 3 2 10–1 7 5 3 2 102 7 5 3 2 Irr trr Conditions: VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 25°C Inductive load 23 5 7 103 10–2 7 5 3 Per unit base = 2 10–2 7 5 3 2 Rth(j–c) = 0.16K/W 101 1 10 2 3 5 7 102 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse TC = 25°C 10–1 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 300A 16 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 3 2 VCC = 200V VCC = 300V 10–1 7 5 3 2 12 8 10–2 7 5 3 Per unit base = 2 10–2 7 5 3 2 4 Rth(j–c) = 0.24K/W 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 0 0 500 1000 1500 2000 2500 TIME (s) GATE CHARGE QG (nC) Feb. 2009 4