CM300DY-28H

MITSUBISHI IGBT MODULES CM300DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B M P - DIA. (4 TYP.) C2E1 E2 C1 E2 C2 R L D C F C1 E1 R G S - M6 THD. (3 TYP) N K K G H TAB #110, t = 0.5 Q N K E J N Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DY-28H is a 1400V (VCES), 300 Ampere Dual IGBT Module. Type CM Current Rating Amperes 300 VCES Volts (x 50) 28 C2E1 E2 C1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.33 3.661±0.01 3.15 2.441±0.01 1.18 Max. 1.18 0.98 0.85 0.83 Millimeters 110.0 93.0±0.25 80.0 62.0±0.25 30.0 Max. 30.0 25.0 21.5 21.2 Dimensions K L M N P Q R S Inches 0.71 0.59 0.55 0.28 0.26 Dia. 0.33 0.24 M6 Metric Millimeters 18.0 15.0 14.0 7.0 Dia. 6.5 8.5 6.0 M6 C1 E1 E2 C2 Sep.1998 MITSUBISHI IGBT MODULES CM300DY-28H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM300DY-28H –40 to 150 –40 to 125 1400 ±20 300 600* 300 600* 2100 1.96 ~ 2.94 1.96 ~ 2.94 500 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m Grams Vrms Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 30mA, VCE = 10V IC = 300A, VGE = 15V IC = 300A, VGE = 15V, Tj = 150°C Total Gate Charge Emitter-Collector Voltage VCC = 800V, IC = 300A, VGE = 15V IE = 300A, VGE = 0V Min. – – 5.0 – – – – Typ. – – 6.5 3.1 2.95 1530 – Max. 1.0 0.5 8.0 4.2** – – 3.8 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 300A, diE/dt = –600A/µs IE = 300A, diE/dt = –600A/µs VCC = 800V, IC = 300A, VGE1 = VGE2 = 15V, RG = 1.0Ω VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 3.0 Max. 60 21 12 250 500 350 500 300 – Units nF nF nF ns ns ns ns ns µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.06 0.12 0.035 Units °C/W °C/W °C/W Sep.1998 MITSUBISHI IGBT MODULES CM300DY-28H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 600 Tj = 25°C 15 COLLECTOR CURRENT, IC, (AMPERES) 600 14 13 COLLECTOR CURRENT, IC, (AMPERES) 5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VCE = 10V 500 400 300 200 100 0 500 400 300 200 100 VGE = 20 (V) 12 4 VGE = 15V Tj = 25°C Tj = 125°C 3 11 10 9 8 0 2 4 6 8 10 2 1 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 120 240 360 480 600 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25°C EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 102 Tj = 25°C Cies 8 IC = 300A IC = 600A 101 Coes 6 102 4 100 Cres 2 IC = 120A VGE = 0V 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 1.0 1.5 2.0 2.5 3.0 3.5 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE 104 REVERSE RECOVERY TIME, t rr, (ns) 103 VCC = 800V VGE = ±15V RG = 1.0Ω Tj = 125°C 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 IC = 300A Irr t rr 16 SWITCHING TIME, (ns) VCC = 600V VCC = 800V 103 td(off) tf td(on) 12 102 101 8 102 tr di/dt = -600A/µsec Tj = 25°C 4 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 0 0 400 800 1200 1600 2000 2400 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM300DY-28H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.06°C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.12°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998