CM30AD00-12H

MITSUBISHI IGBT MODULES CM30AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE CM30AD00-12H ¡IC ..................................................................... 30A ¡VCES ............................................................ 600V ¡Insulated Type ¡CIB Module 3φ Inverter + 3φ Converter + Brake Thyristor + Thermistor + Current shunt resistor APPLICATION AC & DC motor controls, General purpose inverters OUTLINE DRAWING & CIRCUIT DIAGRAM 120 110±0.25 6 11 11 11 GT N P1 N1 P2 P GUP EUP 11 11 11 2.54 2.54 2.54 7.62 7.62 EVP GVP EWP GWP Dimensions in mm 2.5 1.5 2-φ4.5 MOUNTING HOLES t=0.6 MAIN CIRCUIT TERMINAL 22 60±0.5 55 63 0.6±0.1 22 PPS t=0.6 R S T B TH1 U TH2 V W GB E GUN GVN GWN 2-R5 6.4 CONTROL CIRCUIT TERMINAL P1 GT P2 P 6 11 11 11 10 10 11 11 11 2.54 2.54 2.54 2.54 2.54 (2.5) GWP EWP GWN 12 13 φ6 4 4 13 PPS R S φ6 T GUP B GB GUN EUP GVP EVP GVN LABEL N1 TH1 TH2 (sense terminal) N U CIRCUIT DIAGRAM V W E Sep. 2000 MITSUBISHI IGBT MODULES CM30AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) INVERTER PART Symbol Parameter G-E Short C-E Short TC = 25°C PULSE TC = 25°C PULSE TC = 25°C Conditions Collector-emitter voltage VCES VGES Gate-emitter voltage IC Collector Current I CM I E (Note.1) Emitter Current I EM (Note.1) PC ( Note.3) Maximum collector dissipation Rating 600 ±20 30 60 30 60 73 Unit V V A A A A W (Note. 2) (Note. 2) BRAKE PART Symbol VCES VGES IC I CM PC (Note.3) VRRM I FM (Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum collector dissipation Repetitive peak reverse voltage Forward current G-E Short C-E Short TC = 25°C PULSE TC = 25°C Clamp diode part Clamp diode part Conditions Rating 600 ±20 30 60 69 600 30 Unit V V A A W V A (Note. 2) CONVERTER PART Symbol VRRM Ea IO I FSM I 2t Parameter Conditions Rating 800 220 30 500 1.0 × 103 Unit V V A A A2s Repetitive peak reverse voltage Recommended AC input voltage DC output current 3φ rectifying circuit Surge (non-repetitive) forward current 1/2 cycle at 60Hz, peak value, Non-repetitive I2t for fusing Value for one cycle of surge current THYRISTOR PART Symbol VDRM VRRM IT(AV) ITSM PGM PG(AV) IFGM VFGM VRGM di/dt Parameter Conditions Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Single-phase, half-wave 180° conduction Surge (non-repetitive) on-state current 1/2 cycle at 60Hz, peak value Non-repetitive Rating 800 800 30 500 10 1 3 10 5 100 Unit V V A A W W A V V A/ µs Peak gate power dissipation Average gate power dissipation Peak gate forward current Peak gate forward voltage Peak gate reverse voltage Critical rate of rise of on-state Current IG =100mA, VD=400V, dIG /dt=1A/µs COMMON RATING Symbol Tj Tj Tstg Viso — — Parameter Junction temperature Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions Inverter, brake, converter part Thyristor part AC 1 min. Mounting M4 screw Typical value Rating –40 ~ +150 –40 ~ +125 –40 ~ +125 2500 0.98 ~ 1.47 140 Unit °C °C °C V N·m g Sep. 2000 MITSUBISHI IGBT MODULES CM30AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj = 25°C) INVERTER PART Symbol I CES VGE(th) I GES Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Test conditions VCE = VCES, V GE = 0V IC = 3.0mA, VCE = 10V Min. — 4.5 — — — — — — — — — — — — — — — — Limits Typ. — 6 — 2.1 2.15 — — — 90 — — — — — — 0.08 — — Max. 1 7.5 0.5 2.8 — 3.0 2.4 0.6 — 120 300 200 300 2.8 110 — 1.7 2.7 Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC °C/W °C/W VGE = VGES , VCE = 0V Tj = 25°C Collector-emitter saturation voltage IC = 30A, VGE = 15V VCE(sat) Tj = 150°C Input capacitance Cies VCE = 10V Output capacitance Coes VGE = 0V Cres Reverse transfer capacitance QG VCC = 300V, IC = 30A, VGE = 15V Total gate charge t d(on) Turn-on delay time VCC = 300V, IC = 30A tr Turn-on rise time VGE1 = VGE2 = 15V t d(off) RG = 21Ω Turn-off delay time tf Turn-off fall time Resistive load VEC(Note.1) Emitter-collector voltage IE = 30A, VGE = 0V t rr (Note.1) Reverse recovery time IE = 30A, VGE = 0V Qrr ( Note.1) Reverse recovery charge diE / dt = – 60A / µs Rth(j-c)Q IGBT part, Per 1/6 module Thermal resistance Rth(j-c)R FWDi part, Per 1/6 module (Note.4) BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG VFM Rth(j-c)Q Rth(j-c)R Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Test conditions VCE = VCES, VGE = 0V IC = 3.0mA, VCE = 10V Min. — 4.5 — — — — — — — — — — Limits Typ. — 6 — 2.1 2.15 — — — 90 — — — Max. 1 7.5 0.5 2.8 — 3.0 2.4 0.6 — 2.8 1.8 2.8 Unit mA V µA V nF nF nF nC V °C/W °C/W VGE = VGES, V CE = 0V Tj = 25°C IC = 30A, VGE = 15V Collector-emitter saturation voltage Tj = 150°C Input capacitance VCE = 10V Output capacitance VGE = 0V Reverse transfer capacitance VCC = 300V, IC = 30A, VGE = 15V Total gate charge IF = 30A, Clamp diode part Forward voltage drop IGBT part Thermal resistance Clamp diode part (Note.4) CONVERTER PART Symbol I RRM V FM Rth(j-c) Parameter Repetitive reverse current Forward voltage drop Thermal resistance Test conditions VR = VRRM, Tj = 150°C IF = 30A Per 1/6 module Min. — — — Limits Typ. — — — Max. 8 1.5 1.7 Unit mA V °C/W Sep. 2000 MITSUBISHI IGBT MODULES CM30AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE THYRISTOR PART Symbol IDRM IRRM ITM IGT VGT dv/dt IH Rth(j-c) Parameter Test conditions Min. — — — — — 500 — — Limits Typ. — — — — — — 50 — Max. 1 1 1.19 100 3 — — 1.3 Unit mA mA V mA V V/µs mA °C/W Repetitive peak off-state current VD=800V Repetitive peak reverse current VR=800V IT =30A, instantaneous means On-state voltage Gate trigger current Gate trigger voltage Critical rate of rise of off-state Voltage Holding current Thermal resistance VD=6V, IT=1A VD=6V, IT=1A Tj=125°C, VD=540V, exp. waveform THERMISTOR PART Symbol RTH B Parameter Resistance B Constant Test conditions TC = 25°C Resistance at 25°C, 50°C Min. — — Limits Typ. 100 4000 Max. — — Unit kΩ K (Note.5) RESISTOR PART Symbol R — Parameter Resistance Temperature coefficient Test conditions Measured between N-N1 Limits Min. — — Typ. 2.9 0.051 Max. — — Unit mΩ %/°C COMMON RATING Symbol Rth(c-f) Note. 1 2 3 4 5 Parameter Contact thermal resistance Test conditions Case to fin, Thermal compound applied* 1 (1 module) Min. — Limits Typ. 0.035 Max. — Unit °C/W IE, VEC, t rr, Q rr, di E/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed T jmax rating. Junction temperature (Tj) should not increase beyond 150° C. Pulse width and repetition rate should be such as to cause negligible temperature rise. B = (InR1-InR2)/(1/T1-1/T2) R 1 : Resistance at T1(K) R 2 : Resistance at T2(K) *1 : Typical value is measured by using Shin-etsu Silicone “G-746”. Sep. 2000