CM350DU-5F_09

MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE CM350DU-5F ● IC ................................................................... 350A ● VCES .......................................................... 250V ● Insulated Type ● 2-elements in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, Forklift OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 110 E2 G2 6 C2E1 E2 62 ±0.25 C1 15 (8.25) 80 G1 E1 CM (18.5) CIRCUIT DIAGRAM C2E1 E2 C1 4-φ6.5 MOUTING HOLES 3-M6 NUTS 25 93 ±0.25 18 14 7 18 14 25 21.5 2.5 18.25 7 18 14 4 2.8 0.5 0.5 0.5 0.5 7.5 29 +1.0 –0.5 21 LABEL 8.5 G1 E1 6 E2 G2 Feb. 2009 4 MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 250 ±20 350 700 350 700 960 –40 ~ +150 –40 ~ +125 2500 1.96 ~ 2.94 1.96 ~ 2.94 520 Unit V V A A A A W °C °C Vrms N•m N•m g (Note 2) (Note 2) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES Parameter Test conditions VCE = VCES, VGE = 0V IC = 35mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 350A, VGE = 10V VCE = 10V VGE = 0V VCC = 100V, IC = 350A, VGE = 10V VCC = 100V, IC = 350A VGE = ±10V RG = 7.1Ω Resistive load IE = 350A, VGE = 0V IE = 350A, die / dt = –700A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 module) (Note 6) Tj = 25°C (Note 4) Tj = 125°C Min — 3.0 — — — — — — — — — — — — — — — — — Limits Typ — 4.0 — 1.2 1.10 — — — 1320 — — — — — — 5.7 — — 0.02 Max 1 5.0 0.5 1.7 — 99 4.5 3.4 — 1100 2400 900 500 2.0 300 — 0.13 0.19 — Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge Turn-on delay time td (on) tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 1) Emitter-collector voltage trr (Note 1) Reverse recovery time Q rr (Note 1) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. 6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 700 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 700 VCE = 10V COLLECTOR CURRENT IC (A) Tj = 25°C 10 8 6 5.75 5.5 600 VGE=15 (V) 500 400 300 200 100 0 0 1 2 600 500 400 300 200 100 0 0 2 4 6 Tj = 25°C Tj = 125°C 8 10 5.25 5 4.75 4.5 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 2.0 VGE = 10V Tj = 25°C Tj = 125°C 1.5 5 Tj = 25°C 4 3 IC = 700A IC = 350A IC = 140A 1.0 2 0.5 1 0 0 100 200 300 400 500 600 700 COLLECTOR CURRENT IC (A) 0 0 5 10 15 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) 7 5 CAPACITANCE CHARACTERISTICS (TYPICAL) 102 7 5 3 2 Tj = 25°C Cies EMITTER CURRENT IE (A) 3 2 101 7 5 3 2 102 7 5 3 2 Coes Cres 100 7 5 3 2 101 7 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 REVERSE RECOVERY TIME trr (ns) td(off) td(on) tf 5 3 2 5 3 2 3 2 trr 102 7 5 tr 102 7 5 3 2 102 Irr 7 5 3 2 3 Tj = 125°C 2 101 1 10 VCC = 100V VGE = ±10V RG = 7.1Ω 2 3 5 7 102 2 3 5 7 103 101 1 10 2 3 5 7 102 2 3 5 7 103 101 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.13K/ W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j – c) = 0.19K/ W 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 350A 15 VCC = 50V VCC = 100V 10 5 0 0 0.5 1.0 1.5 2.0 2.5 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 103 – di /dt = 700A /µs 7 7 Tj = 25°C SWITCHING TIME (ns)