CM400DU-12NFH

MITSUBISHI IGBT MODULES CM400DU-12NFH HIGH POWER SWITCHING USE CM400DU-12NFH ¡IC ................................................................... 400A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93 ±0.25 14 14 TC measured point 14 E2 G2 C2E1 E2 G2 E2 C1 6 48 ±0.25 CM G1 E1 6 CIRCUIT DIAGRAM C2E1 E2 C1 25 3-M6 NUTS 4-φ6. 5 MOUTING HOLES 25 21.5 2.5 4 18 7 18 7 18 2.8 7.5 8.5 0.5 0.5 0.5 0.5 29 +1.0 –0.5 22 LABEL 4 Feb.2004 G1 E1 15 62 MITSUBISHI IGBT MODULES CM400DU-12NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso — — — (Tj = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4 Conditions (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Ratings 600 ±20 400 800 400 800 960 1640 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A A A W W °C °C V N•m N•m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current (Tj = 25°C) Test conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 400A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 300V, IC = 400A, VGE = 15V VCC = 300V, IC = 400A VGE1 = VGE2 = 15V RG = 3.1Ω, Inductive load switching operation IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) Tc measured point is just under the chips (1/2 module) Min. — 5 — — — — — — — — — — — — — — — — — — 1.6 Limits Typ. — 6 — 2.0 1.95 — — — 2480 — — — — — 7.7 — — — 0.04 — — Max. 1 7 0.5 2.7 — 110 7.2 4.0 — 400 200 700 150 200 — 2.6 0.13 0.18 — 0.076*3 16 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage (Note 4) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance *1 : TC measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : TC’ measured point is just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. No short circuit capability is designed. Feb.2004 MITSUBISHI IGBT MODULES CM400DU-12NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3 800 COLLECTOR CURRENT IC (A) 700 600 500 13 15 VGE = 20V 11 10 Tj = 25°C 9.5 9 8.5 8 VGE = 15V 2.5 2 1.5 1 0.5 400 300 200 100 0 7 7.5 Tj = 25°C Tj = 125°C 0 100 200 300 400 500 600 700 800 COLLECTOR CURRENT IC (A) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 6 8 10 12 14 Tj = 25°C EMITTER CURRENT IE (A) 5 3 2 IC = 800A IC = 400A IC = 160A 102 7 5 3 2 Tj = 25°C 16 18 20 101 0 0.5 1 1.5 2 2.5 3 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 103 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIME (ns) td(off) td(on) 3 2 102 7 5 3 2 Cies 102 7 5 3 2 tf tr Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load 23 5 7 103 101 7 5 3 2 Coes Cres VGE = 0V 100 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 101 1 10 2 3 5 7 102 COLLECTOR CURRENT IC (A) Feb.2004 MITSUBISHI IGBT MODULES CM400DU-12NFH HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part ) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 Single Pulse TC = 25°C 10–1 7 5 3 2 10–1 7 5 3 2 102 7 5 3 2 Irr trr Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive load 23 5 7 103 10–2 7 5 3 Per unit base = 2 10–2 7 5 3 2 Rth(j– c) = 0.13°C/W 101 1 10 2 3 5 7 102 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse TC = 25°C 10–1 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 400A 16 VCC = 200V VCC = 300V 12 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 3 2 10–1 7 5 3 2 8 10–2 7 5 3 Per unit base = 2 10–2 7 5 3 2 4 Rth(j– c) = 0.18°C/W 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 0 0 500 1000 1500 2000 2500 3000 3500 GATE CHARGE QG (nC) TIME (s) Feb.2004