CM400DU-24F

MITSUBISHI IGBT MODULES CM400DU-24F HIGH POWER SWITCHING USE CM400DU-24F G IC ................................................................... 400A G VCES .......................................................... 1200V G Insulated Type G 2-elements in a pack APPLICATION General purpose inverters & Servo controlers, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 140 130 110 ±0.25 36 43.8 10 13.8 11.5 10 9 G2 20.4 E2 (26) (26) (26) Tc measured point 110 ±0.25 130 (15) C2E1 20 (15) E1 3-M8 NUTS 65 4-M4 NUTS G1 14.5 40 E2 C1 14.5 Tc measured point 4-φ6.5MOUNTING RTC 24.5 -0.5 35 -0.5 +1 +1 C2E1 E2 RTC C1 G1 E1 8 CIRCUIT DIAGRAM Sep. 2001 E2 G2 HOLES MITSUBISHI IGBT MODULES CM400DU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 400 800 400 800 1100 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 Unit V V A A A A W °C °C V N•m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 400A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A VGE1 = VGE2 = 15V RG = 3.1Ω, Inductive load switching operation IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied*2 (1/2 module) Tc measured point is just under the chips Min. — 5 — — — — — — — — — — — — — — — — — — 3.1 Limits Typ. — 6 — 1.8 1.9 — — — 4400 — — — — — 23.6 — — — 0.010 — — Max. 2 7 80 2.4 — 160 6.8 4.0 — 450 200 1000 300 550 — 3.2 0.11 0.13 — 0.045*3 15 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Sep. 2001 MITSUBISHI IGBT MODULES CM400DU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) Tj=25°C 15 VGE=20V COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 800 700 600 500 400 9.5 11 10 9 3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 200 400 600 800 8.5 300 200 100 0 0 0.5 1 1.5 2 2.5 3 3.5 4 8 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 Tj = 25°C Tj = 25°C 4 3 IC = 800A 2 IC = 400A IC = 160A 1 EMITTER CURRENT IE (A) 102 7 5 3 2 0 6 8 10 12 14 16 18 20 101 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 103 104 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) 7 5 SWITCHING TIMES (ns) 3 2 102 7 5 3 2 Cies 103 td(off) tf td(on) 102 tr Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load 5 7 102 2 3 5 7 103 101 7 5 3 2 101 Coes VGE = 0V Cres 100 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 2 3 COLLECTOR CURRENT IC (A) Sep. 2001 MITSUBISHI IGBT MODULES CM400DU-24F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) 103 7 5 3 2 Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive load TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–5 2 3 5 710–4 2 3 5 710–3 2 3 5 710–2 2 3 5 7 10–1 100 7 IGBT part: 5 Per unit base = Rth(j– c) = 0.11°C/W 3 FWDi part: 2 Per unit base = Rth(j– c) = 0.13°C/W 10–1 7 5 3 2 7 5 3 2 3 2 102 1 7 5 3 2 trr Irr 10–2 Single Pulse TC = 25°C 100 7 5 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 10–3 10–1 2 3 5 7 100 2 3 5 7 101 TMIE (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 1000 2000 3000 4000 5000 6000 GATE CHARGE QG (nC) IC = 400A VCC = 400V VCC = 600V Sep. 2001