CM400DU-34KA

MITSUBISHI IGBT MODULES CM400DU-34KA HIGH POWER SWITCHING USE CM400DU-34KA G IC ................................................................... 400A G VCES .......................................................... 1700V G Insulated Type G 2-elements in a pack APPLICATION General purpose inverters & Servo controlers, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 140 130 110 ±0.25 36 43.8 10 13.8 11.5 10 (15) 9 G2 20.4 E2 (26) (26) (26) Tc measured point 110 ±0.25 C2E1 14.5 E1 3-M8 NUTS 65 4-M4 NUTS G1 14.5 130 20 40 E2 C1 (15) Tc measured point 4-φ6.5MOUNTING HOLES 24.5 -0.5 35 -0.5 +1 +1 C2E1 E2 C1 CIRCUIT DIAGRAM G1 E1 8 E2 G2 Sep. 2001 MITSUBISHI IGBT MODULES CM400DU-34KA HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1700 ±20 400 800 400 800 1950 –40 ~ +150 –40 ~ +125 3500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 Unit V V A A A A W °C °C V N•m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Test conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 400A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 1000V, IC = 400A, VGE = 15V VCC = 1000V, IC = 400A VGE1 = VGE2 = 15V RG = 1.0Ω, Inductive load switching operation IE = 400A IE = 400A, VGE = 0V, Tj = 25°C IE = 400A, VGE = 0V, Tj = 125°C IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied*2 (1/2 module) Tc measured point is just under the chips Min. — 4 — — — — — — — — — — — — — — — — — — — Limits Typ. — 5.5 — 3.2 3.8 — — — 1800 — — — — — 18.9 — 2.2 — — 0.010 — Max. 1 7 0.5 4.1 — 57 9.6 3 — 1000 300 1000 800 600 — 4.6 — 0.064 0.11 — 0.025 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V V °C/W °C/W °C/W °C/W VEC(Note 1) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Thermal resistance*1 Contact thermal resistance Thermal resistance*3 Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Sep. 2001 MITSUBISHI IGBT MODULES CM400DU-34KA HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 800 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 11 COLLECTOR CURRENT (A) Tj = 25°C VGE = 20V 15 14 12 800 VCE = 10V Tj = 25°C Tj = 125°C 600 600 10 400 9 200 8 0 400 200 0 2 4 6 8 10 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 6 VGE = 15V Tj = 25°C 5 Tj = 125°C 4 3 2 1 0 10 Tj = 25°C 8 6 IC = 800A 4 IC = 400A IC = 160A 2 0 100 200 300 400 500 600 700 800 COLLECTOR CURRENT IC (A) 0 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 25°C Cies 101 7 5 3 2 102 7 5 3 2 Coes Cres 100 7 5 3 2 101 1 2 3 4 5 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Sep. 2001 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM400DU-34KA HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 SWITCHING TIMES (ns) 103 7 5 3 2 tf td(off) td(on) trr 102 7 5 3 2 Irr Conditions: VCC = 1000V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 102 7 5 3 2 tr 101 1 10 Conditions: VCC = 1000V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load 5 7 102 2 3 5 7 103 2 3 101 1 10 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) EMITTER CURRENT (A) GATE-EMITTER VOLTAGE VGE (V) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j– c) = 0.064°C/W 3 FWDi part: 2 Per unit base = Rth(j– c) = 0.11°C/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 IC = 400A 16 VCC = 800V VCC = 1000V 12 10–1 10–1 7 5 3 2 7 5 3 2 8 10–2 10–2 Single Pulse TC = 25°C 4 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) 0 0 500 1000 1500 2000 2500 GATE CHARGE QG (nC) Sep. 2001