CM400DU-5F

MITSUBISHI IGBT MODULES CM400DU-5F HIGH POWER SWITCHING USE CM400DU-5F ¡IC ................................................................... 400A ¡VCES ............................................................ 250V ¡Insulated Type ¡2-elements in a pack APPLICATION DC choper, Inverters for battery source OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93 ±0.25 14 14 Tc measured point 14 E2 G2 E2 G2 C2E1 E2 C1 (8.25) 6 48 ±0.25 CM G1 E1 6 (18) CIRCUIT DIAGRAM C2E1 E2 C1 25 3-M6 NUTS 4-φ6. 5 MOUNTING HOLES 25 21.5 2.5 4 18 7 18 7 18 2.8 7.5 8.5 15.85 0.5 0.5 0.5 0.5 29 +1.0 –0.5 22 LABEL G1 E1 15 62 Mar. 2002 4 MITSUBISHI IGBT MODULES CM400DU-5F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 250 ±20 400 800 400 800 890 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A W °C °C V N•m N•m g (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Test conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V Min. — 3.0 — — — — — — — — — — — — — — — — — — Limits Typ. — 4.0 — 1.2 1.1 — — — 750 — — — — — 16.0 — — — 0.04 — Max. 1 5.0 0.5 1.7 — 110 7.0 3.8 — 850 400 1100 500 300 — 2 0.14 0.24 — 0.08 Unit mA V µA V VGE = VCES, VCE = 0V Tj = 25°C Collector to emitter saturation voltage IC = 400A, VGE = 10V VCE(sat) Tj = 125°C Input capacitance Cies VCE = 10V Output capacitance Coes VGE = 0V Reverse transfer capacitance Cres Total gate charge QG VCC = 100V, IC = 400A, VGE = 10V Turn-on delay time td(on) Turn-on rise time tr VCC = 100V, IC = 400A Turn-off delay time td(off) VGE1 = VGE2 = 10V Turn-off fall time tf RG = 6.3Ω, Inductive load switching operation trr (Note 1) Reverse recovery time IE = 400A Qrr (Note 1) Reverse recovery charge VEC(Note 1) Emitter-collector voltage IE = 200A, VGE = 0V Rth(j-c)Q IGBT part (1/2 module) Thermal resistance*1 Rth(j-c)R FWDi part (1/2 module) Contact thermal resistance Rth(c-f) Case to fin, Thermal compoundapplied*2 (1/2 module) Thermal resistance*3 Tc measured point is just under the chips Rth(j-c’)Q nF nC ns ns µC V °C/W Note 1. IE, VEC, trr, Qrr and die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Mar. 2002 MITSUBISHI IGBT MODULES CM400DU-5F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 800 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 800 COLLECTOR CURRENT (A) Tj = 25°C VGE = 15V 10 8 6.25 700 600 500 400 300 200 100 0 0 6.5 6 600 VCE = 10V Tj = 25°C Tj = 125°C 400 5.75 200 5.5 5.25 5 0 0 1 2 3 4 5 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 2 VGE = 10V Tj = 25°C 1.6 Tj = 125°C 1.2 10 Tj = 25°C 8 6 0.8 4 IC = 400A 0.4 2 IC = 800A IC = 160A 0 0 100 200 300 400 500 600 700 800 COLLECTOR CURRENT IC (A) 0 0 2 4 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 25°C Cies 101 7 5 3 2 102 7 5 3 2 Coes Cres 100 7 5 3 2 101 0.6 0.8 1 1.2 1.4 1.6 1.8 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Mar. 2002 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM400DU-5F HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIMES (ns) td(off) td(on) tf tr REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 3 2 trr Irr 102 7 5 3 2 102 7 5 3 2 101 1 10 Conditions: VCC = 100V VGE = ±10V RG = 6.3Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 101 1 10 Conditions: VCC = 100V VGE = ±10V RG = 6.3Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) EMITTER CURRENT IE (A) GATE-EMITTER VOLTAGE VGE (V) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j– c) = 0.14°C/W 3 FWDi part: 2 Per unit base = Rth(j– c) = 0.24°C/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 IC = 400A 16 VCC = 50V VCC = 100V 12 10–1 10–1 7 5 3 2 7 5 3 2 8 10–2 10–2 Single Pulse TC = 25°C 4 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) 0 0 500 1000 1500 2000 2500 3000 GATE CHARGE QG (nC) Mar. 2002