CM400DY-50H

MITSUBISHI HVIGBT MODULES CM400DY-50H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-50H q IC ................................................................... 400A q VCES ....................................................... 2500V q Insulated Type q 2-elements in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 57±0.25 4 - M8 NUTS 20 C2 E1 C2 C2 G2 E2 C1 G1 E1 E1 124±0.25 140 40 E2 CM C1 E2 E1 CIRCUIT DIAGRAM E2(C1) G1 G2 C2 6 - φ 7 MOUNTING HOLES 24.5 53.6 61.5 15 5.7 15 39.5 7.2 5 - M4 NUTS 36.3 48.8 18 38 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 28 5 30 LABEL Mar. 2003 MITSUBISHI HVIGBT MODULES CM400DY-50H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 80°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 2500 ±20 400 800 400 800 3400 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W °C °C V N·m N·m N·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. Parameter Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 400A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 1250V, IC = 400A, VGE = 15V VCC = 1250V, IC = 400A VGE1 = VGE2 = 15V RG = 7.5Ω Resistive load switching operation IE = 400A, VGE = 0V IE = 400A die / dt = –800A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to fin, conductive grease applied (Per 1/2 module) Min — 4.5 — — — — — — — — — — — — — — — — — Limits Typ — 6.0 — 3.20 3.60 40 4.4 1.3 1.8 — — — — 2.90 — 85 — — 0.016 Max 5 7.5 0.5 4.16 — — — — — 1.00 2.00 2.00 1.00 3.77 1.20 — 0.036 0.072 — Unit mA V µA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W (Note 4) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (T j) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM400DY-50H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 800 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 800 COLLECTOR CURRENT IC (A) Tj=25°C VGE=13V VGE=12V VGE=11V VCE=10V 600 600 VGE=14V VGE=15V 400 VGE=10V VGE=20V VGE=9V VGE=8V VGE=7V 8 10 400 200 200 Tj = 25°C Tj = 125°C 0 0 4 8 12 16 20 0 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 Tj = 25°C 5 VGE=15V 4 8 IC = 800A IC = 400A 4 3 6 2 1 Tj = 25°C Tj = 125°C 0 200 400 600 800 2 IC = 160A 0 0 4 8 12 16 20 0 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 CAPACITANCE Cies, Coes, Cres (nF) CAPACITANCE CHARACTERISTICS (TYPICAL) 102 7 5 3 2 101 7 5 3 2 Cies 4 3 Coes 2 1 Tj = 25°C Tj = 125°C 0 200 400 600 800 0 100 Cres 7 5 3 VGE = 0V, Tj = 25°C 2 Cies, Coes : f = 100kHz : f = 1MHz Cres –1 10 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) Mar. 2003 MITSUBISHI HVIGBT MODULES CM400DY-50H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY TIME trr (µs) 101 7 5 3 2 100 7 5 Irr 103 7 5 3 2 102 7 5 3 2 23 5 101 100 7 5 3 2 10–1 7 5 td(off) td(on) tr tf trr 5 7 102 23 5 7 103 23 5 10–1 3 VCC = 1250V, Tj = 125°C 2 Inductive load VGE = ±15V, RG = 7.5Ω 5 7 102 23 5 7 103 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) SWITCHING ENERGY (J/P) SWITCHING ENERGY (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1.0 VCC = 1250V, VGE = ±15V, RG = 7.5Ω, Tj = 125°C, 0.8 Inductive load HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3.0 2.5 2.0 1.5 1.0 0.5 0 0.6 Eon 0.4 Eoff 0.2 Erec 0 0 100 200 300 400 500 0 5 10 15 20 25 30 CURRENT (A) GATE RESISTANCE (Ω) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS GATE-EMITTER VOLTAGE VGE (V) 16 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) VCC = 1250V IC = 400A 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 Single Pulse TC = 25°C Rth(j – c)Q = 0.036K/ W Rth(j – c)R = 0.072K/ W (Per 1/2 module) 12 8 4 0 0 1000 2000 3000 4000 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) GATE CHARGE QG (nC) Mar. 2003 REVERSE RECOVERY CURRENT Irr (A) SWITCHING TIMES (µs) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 VCC = 1250V, VGE = ±15V 3 RG = 7.5Ω, Tj = 125°C 2 Inductive load REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL)