MITSUBISHI IGBT MODULES
CM400HA-34H
HIGH POWER SWITCHING USE INSULATED TYPE
A B
R - M4 THD (2 TYP.)
N
Q - DIA. (4 TYP.)
E
J H A B H
G E C
P - M8 THD (2 TYP.)
G
M F L D K M
E
C
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features:eatures: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Auxilliary Inverter for Traction UPS Welding Power Supplies
E E G
C
Outline Drawing and Circuit Diagram
Dimensions A B C D E F G H
Inches 4.49 3.66±0.01 1.26
Millimeters 114.0 93.0±0.25 32.0
Dimensions J K L M N P Q R
Inches 0.71 0.57 0.43 0.41 0.35 M8 Metric 0.26 Dia. M4 Metric
Millimeters 18.0 14.5 11.0 10.5 9.0 M8 Dia. 6.5 M4
1.50+0.04/-0.02 38.0+1.0/-0.5
1.18+0.04/-0.02 30.0+1.0/-0.5 1.02 1.0 0.83 26.0 25.5 21.0
Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400HA-34H is a 1700V (VCES), 400 Ampere Single IGBT Module.
Type CM Current Rating Amperes 400 VCES Volts (x 50) 34
Sep.1998
MITSUBISHI IGBT MODULES
CM400HA-34H
HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C) Mounting Torque, M8 Main Terminal Mounting Torque, M6 Mounting Mounting Torque, M4 Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – – Viso CM600HU-12H -40 to 150 -40 to 125 1700 ±20 400 800* 400 800* 4100 8.83~10.8 1.96~2.94 0.98~1.47 980 4000 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m N·m Grams Vrms
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES V GE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 40mA, VCE = 10V IC = 400A, VGE = 15V IC = 400A, VGE = 15V, Tj = 150°C Total Gate Charge Emitter-Collector Voltage VCC = 750V, IC = 400A, VGE = 15V IE = 400A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.7 – 2900 – Max. 4 0.5 7.5 3.7** –* – 3.4 Units mA µA Volts Volts Volts nC Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 400A, diE/dt = –800A/µs IE = 400A, diE/dt = –800A/µs VCC = 750V, IC = 400A, VGE1 = VGE2 = 15V, RG = 10Ω VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 7.0 Max. 85 20 15 900 1500 1500 800 400 – Units nF nF nF ns ns ns ns ns µC
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.030 0.060 0.023 Units °C/W °C/W °C/W Sep.1998
MITSUBISHI IGBT MODULES
CM400HA-34H
HIGH POWER SWITCHING USE INSULATED TYPE
OUTPUT CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
800
Tj = 25°C VGE = 20V
IC, (AMPERES)
15 12
800
VCE = 10V Tj = 25°C Tj = 125°C
5
VGE = 15V Tj = 25°C Tj = 125°C
640
640 11
IC, (AMPERES)
4
VCE(sat), (VOLTS)
10
480
480
3
320 9 8 0 0 2 4 6 8 10
VCE, (VOLTS)
320
2
160
160
1
0 0 4 8 12 16 20
VGE, (VOLTS)
0 0 160 320 480 640 800
IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
103
Tj = 25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
103
8
VCE(sat), (VOLTS)
IC = 800A
IE, (AMPERES)
102
Cies
6
IC = 400A
102
4
101
VGE = 0V
Coes Cres
2
IC = 160A
0 0 4 8 12 16 20
VGE, (VOLTS)
101 0 1 2
VEC, (VOLTS)
3
4
100 10-1
100
VCE, (VOLTS)
101
102
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
104
REVERSE RECOVERY TIME, t rr, (ns)
103
VCC = 750V VGE = ±15V RG = 10Ω Tj = 125°C td(off)
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 400A
16
VCC = 500V VCC = 750V
SWITCHING TIME, (ns)
trr
12
103
tf t d(on)
102
Irr
102
8
tr
di/dt = -800A/µsec Tj = 25°C
4
102 101
102
COLLECTOR CURRENT IC, (AMPERES)
103
101 101
102
EMITTER CURRENT, IE, (AMPERES)
101 103
0 0 0.8 1.6 2.4 3.2 4.0
GATE CHARGE, QG, (µC)
Sep.1998
MITSUBISHI IGBT MODULES
CM400HA-34H
HIGH POWER SWITCHING USE INSULATED TYPE
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
100
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.03°C/W
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100
101
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100
101
100
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.06°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
Sep.1998