CM400HG-66H

MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-66H q IC ................................................................... 400A q VCES ....................................................... 3300V q High Insulated Type q 1-element in a Pack q AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM 73±0.5 57±0.25 2 - M8 NUTS Dimensions in mm 29.7 2 17±0.1 (2) C 124±0.25 140±0.5 44±0.3 1 (1) E E G C 36 EG C CIRCUIT DIAGRAM 5 21.6±0.3 12.9±0.3 4 - φ 7 MOUNTING HOLES 16.2±0.3 screwing depth min. 4 screwing depth min. 16.5 41±0.5 22±0.3 17.4±0.3 2.8 TAB # 110, T = 0.5 5.8 48 +1.0 0 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 5±0.15 40.4±0.5 LABEL 36.2 Jul. 2005 MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso Qpd tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Partial discharge Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 90°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 3300 ±20 400 800 400 800 4100 –40 ~ +150 –40 ~ +125 –40 ~ +125 10200 10 10 Unit V V A A A A W °C °C °C V pC µs (Note 1) (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. V1 = 6900Vrms, V2 = 5100Vrms f = 60Hz (acc. to IEC 1287) VCC = 2200V, VCES ≤ 3300V, VGE = 15V Tj = 125°C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Conditions VCE = VCES, VGE = 0V, Tj = 25°C IC = 40mA, VCE = 10V, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C IC = 400A, VGE = 15V, Tj = 25°C IC = 400A, VGE = 15V, Tj = 125°C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 1650V, IC = 400A, VGE = 15V, Tj = 25°C IE = 400A, VGE = 0V, Tj = 25°C (Note 4) IE = 400A, VGE = 0V, Tj = 125°C (Note 4) VCC = 1650V, IC = 400A, VGE = ±15V RG(on) = 5Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 400A, VGE = ±15V RG(off) = 5Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 400A, VGE = ±15V RG(on) = 5Ω, Tj = 125°C, Ls = 100nH Inductive load (Note 4) (Note 4) Min — 5.0 — — — — — — — — — — — — — — — — — — Limits Typ — 6.0 — 3.30 3.60 60 6.0 5.4 2.8 2.80 2.70 — — 0.64 — — 0.52 — 270 0.30 Max 5 7.0 0.5 4.20 — — — — — 3.60 — 1.60 1.00 — 2.50 1.00 — 1.40 — — Unit mA V µA V nF nF nF µC V µs µs J/pulse µs µs J/pulse µs µC J/pulse V EC(Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2) Note 1. 2. 3. 4. Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K Min — — — Limits Typ — — 18.0 Max 30.0 60.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 — 600 26.0 56.0 Limits Typ — — — 0.52 — — — Max 15.0 6.0 3.0 — — — — Unit M — CTI da ds Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface N·m kg — mm mm HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 800 700 Tj = 125°C 800 TRANSFER CHARACTERISTICS (TYPICAL) VCE = 20V 700 COLLECTOR CURRENT (A) VGE = 15V 500 400 VGE = 12V COLLECTOR CURRENT (A) 600 VGE = 20V 600 500 400 300 200 100 0 VGE = 10V 300 200 VGE = 8V 100 0 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 12 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 6 COLLECTOR-EMITTER SATURATION VOLTAGE (V) 6 VGE = 15V 5 EMITTER-COLLECTOR VOLTAGE (V) 5 4 4 3 3 2 2 1 Tj = 25°C Tj = 125°C 0 0 200 400 600 800 1 Tj = 25°C Tj = 125°C 0 0 200 400 600 800 COLLECTOR CURRENT (A) EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 5 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCC = 1650V, IC = 400A Tj = 25°C VGE = 0V, Tj = 25°C f = 100kHz CAPACITANCE (nF) 102 7 5 3 2 Cies GATE-EMITTER VOLTAGE (V) 16 12 8 101 7 5 3 2 Coes 4 Cres 100 -1 10 23 5 7 100 23 5 7 101 23 5 7 102 0 0 1 2 GATE CHARGE (µC) 3 4 COLLECTOR-EMITTER VOLTAGE (V) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1.4 VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 5Ω Tj = 125°C, Inductive load Eon 1 Eoff 0.8 3 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 1650V, IC = 400A VGE = ±15V Tj = 125°C, Inductive load Eon 2 1.2 2.5 SWITCHING ENERGIES (J/pulse) SWITCHING ENERGIES (J/pulse) 1.5 0.6 Erec 1 Eoff 0.5 Erec 0.4 0.2 0 0 200 400 600 800 0 0 10 20 30 40 50 COLLECTOR CURRENT (A) GATE RESISTANCE (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102 7 5 3 2 FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 REVERSE RECOVERY TIME (µs) 3 2 3 2 101 7 5 3 2 101 7 5 3 2 103 lrr 7 5 3 2 td(off) 100 7 5 3 2 td(on) 100 7 5 3 2 trr 102 7 5 3 2 tr tf 10-1 1 10 23 5 7 102 23 5 7 103 23 5 7 104 10-1 1 10 23 5 7 102 23 5 7 103 23 5 7 104 101 COLLECTOR CURRENT (A) EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 1.0 Single Pulse, TC = 25°C Rth(j–c)Q = 30K/kW Rth(j–c)R = 60K/kW 0.8 0.6 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 REVERSE RECOVERY CURRENT (A) VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 5Ω Tj = 125°C, Inductive load VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 5Ω Tj = 125°C, Inductive load 104 7 5 SWITCHING TIMES (µs) MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1200 VCC ≤ 2200V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 5Ω 1200 FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) VCC ≤ 2200V, di/dt ≤ 2200A/µs Tj = 125°C 1000 REVERSE RECOVERY CURRENT (A) 0 1000 2000 3000 4000 1000 COLLECTOR CURRENT (A) 800 800 600 600 400 400 200 200 0 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) EMITTER-COLLECTOR VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005