CM400HU-24F_09

MITSUBISHI IGBT MODULES CM400HU-24F HIGH POWER SWITCHING USE CM400HU-24F ¡IC ................................................................... 400A ¡VCES ......................................................... 1200V ¡Insulated Type ¡1-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 93±0.25 13.5 26 29 20.5 4–φ6.5 MOUNTING HOLES 8.5 12.55 10 9.5 19.1 62 48±0.25 17.2 6.5 G E 9 6.5 8.5 E 21.15 C CM 2–M4NUTS 18 Tc measured point 6.5 23 6 23 2–M8NUTS 4 24.35 E +1 26 –0.5 C RTC LABEL 34+1 –0.5 E G CIRCUIT DIAGRAM Feb. 2009 MITSUBISHI IGBT MODULES CM400HU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 400 800 400 800 1600 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 450 Unit V V A A W °C °C Vrms N•m N•m N•m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw G(E) Terminal M4 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 400A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A VGE = ±15V RG = 0.78Ω, Inductive load IE = 400A IE = 400A, VGE = 0V IGBT part FWDi part Case to heat sink, Thermal compound applied*2 Case temperature measured point is just under the chips Tj = 25°C Tj = 125°C Min. — 5 — — — — — — — — — — — — — — — — — — 0.78 Limits Typ. — 6 — 1.8 1.9 — — — 4400 — — — — — 23.6 — — — 0.02 — — Max. 2 7 80 2.4 — 160 6.8 4.0 — 300 100 600 300 350 — 3.2 0.078 0.09 — 0.045*3 7.8 Unit mA V µA V nF nC ns ns µC V K/W Ω Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM400HU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 9.5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 15V Tj = 25°C 2.5 Tj = 125°C 2 1.5 1 0.5 0 800 COLLECTOR CURRENT IC (A) 700 600 500 400 Tj = 25°C VGE = 20V 15 11 10 9 8.5 300 200 8 100 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 200 400 600 800 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 5 Tj = 25°C Tj = 25°C 4 3 IC = 800A 2 IC = 400A IC = 160A 102 7 5 3 2 1 0 6 8 10 12 14 16 18 20 101 0 0.5 1 1.5 2 2.5 3 3.5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 103 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) tf td(on) 102 7 5 3 2 Cies SWITCHING TIMES (ns) 102 7 5 3 2 tr 101 7 5 3 2 101 7 5 3 2 Coes Cres VGE = 0V 100 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 Conditions: VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive load 5 7 102 2 3 5 7 103 2 3 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM400HU-24F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.078K/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.09K/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 3 2 Irr 102 7 5 3 2 10–1 10–1 7 5 3 2 7 5 3 2 trr Conditions: VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 10–2 Single Pulse TC = 25°C 10–2 101 1 10 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 400A VCC = 400V VCC = 600V 1000 2000 3000 4000 5000 6000 GATE CHARGE QG (nC) Feb. 2009 4