CM450HA-5F_00

MITSUBISHI IGBT MODULES CM450HA-5F HIGH POWER SWITCHING USE INSULATED TYPE A B E S E D C Q - THD. (2 TYP.) R R G E C GF P - THD. (2 TYP.) H J N - DIA. (2 TYP.) M K LABEL L Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration, with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diodes High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: UPS Forklift E E C G Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 3.82 3.15 0.69 1.14 1.04 1.89 0.63 0.24 0.26 Millimeters 97.0 80.0 17.5 29.0 26.5 48.0 16.0 6.0 6.7 Dimensions K L M N P Q R S Inches 1.14 1.42 0.28 0.26 Dia. M4 Metric M6 Metric 0.51 0.35 Millimeters 29.0 –0.5 36.0 –0.5 7.0 Dia. 6.5 M4 M6 13.0 9.0 +1.0 +1.0 Ordering Information: Example: Select the complete nine digit module part number you desire from the table below - i.e. CM450HA-5F is a 250V (VCES), 450 Ampere Single IGBT Module. Type CM Current Rating Amperes 450 VCES Volts (x 50) 5 Sep.2000 MITSUBISHI IGBT MODULES CM450HA-5F HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Symbol Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E Short) Gate-Emitter Voltage (C-E Short) Collector Current (TC = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Mounting Torque, M4 Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Ratings -40 to 150 -40 to 125 250 ±20 450 900* 450 900* 735 1.96 ~ 2.94 1.96 ~ 2.94 0.98 ~ 1.47 270 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m N·m Grams Vrms Tj Tstg VCES VGES IC ICM IE IEM Pc — — — — Viso Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 45mA, VCE = 10V IC = 450A, VGE = 10V, IC = 450A, VGE = 10V, Tj = 150°C Total Gate Charge Emitter-Collector Voltage VCC = 100V, IC = 450A, VGE = 10V IE = 450A, VGE = 0V Min. — — 3.0 — — — — Typ. — — 4.0 1.2 1.1 1760 — Max. 1.0 0.5 5.0 1.7** — — 2.0 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 100V, IC = 450A, VGE1 = VGE2 = 10V, RG = 5.6Ω, Resistive Load IE = 450A, diE/dt = -900A/µs IE = 450A, diE/dt = -900A/µs VGE = 0V, VCE = 10V Test Conditions Min. — — — — — — — — — Typ. — — — — — — — — 7.6 Max. 132 6 4.5 1200 2700 900 500 300 — Units nF nF nF ns ns ns ns ns µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per Free Wheel Diode Per Module, Thermal Grease Applied Min. — — — Typ. — — — Max. 0.17 0.23 0.090 Units °C/W °C/W °C/W Sep.2000 MITSUBISHI IGBT MODULES CM450HA-5F HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1000 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC VGE = 15V 10 8 6 1000 5.75 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2.0 VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C 800 800 1.5 5.5 600 600 1.0 400 5.25 400 200 4.5 5.0 4.75 200 0.5 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 2 4 6 8 10 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 200 400 600 800 1000 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 5 Tj = 25°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) EMITTER CURRENT, IE, (AMPERES) 104 Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) 103 VGE = 0V 4 103 102 Cies 3 IC = 450A IC = 900A 2 102 101 Coes Cres 1 IC = 180A 0 0 5 10 15 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0.6 0.8 1.0 1.2 1.4 1.6 1.8 100 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -900A/µsec Tj = 25°C REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 104 REVERSE RECOVERY TIME, t rr, (ns) 103 VCC = 100V VGE = ±10V RG = 5.6Ω Tj = 125°C 103 20 IC = 450A GATE-EMITTER VOLTAGE, VGE, (VOLTS) SWITCHING TIME, (ns) 15 VCC = 50V t rr VCC = 100V 103 td(off) td(on) tf 102 Irr 102 10 5 102 101 tr 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 103 0 0 1 2 3 4 5 GATE CHARGE, QG, (nC) Sep.2000 MITSUBISHI IGBT MODULES CM450HA-5F HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.17°C/W 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.23°C/W 100 100 10-1 10-1 10-2 10-2 10-3 10-3 10-2 10-1 TIME, (s) 100 101 10-3 10-3 10-2 10-1 TIME, (s) 100 101 Sep.2000