CM50MD-12H

MITSUBISHI IGBT MODULES CM50MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE CM50MD-12H ¡IC ..................................................................... 50A ¡VCES ............................................................ 600V ¡Insulated Type ¡CIB Module 3φ Inverter+3φ Converter+Brake ¡UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics OUTLINE DRAWING & CIRCUIT DIAGRAM P P1 GU 2.54 2.54 2.54 2.54 2.54 2.54 2.54 Dimensions in mm GV EV GW EW R S T B EU GB GV GW E GU GV GW E 8 15 15 17.2 EU GU 10.16 10.16 10.16 N U V CIRCUIT DIAGRAM W EV GV EW GU GW GB 60 R S T B U V W 13 12.5 12.5 15 5 15 12.5 12.5 2 - R5.5 29 ±0.25 2 - φ4.5 MOUNTING HOLES 58 29 ±0.25 P P1 N GE GE G E GB G G G E 9 4 2 t = 0.6 0.6 t = 0.6 105 ±0.25 115 6.3 45° 12 LABEL MAIN CIRCUIT TERMINAL CONTROL CIRCUIT TERMINAL Feb.1999 MITSUBISHI IGBT MODULES CM50MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3) (Tj = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation G – E Short C – E Short TC = 25°C PULSE TC = 25°C PULSE Tf = 25°C Condition (Note. 2) (Note. 2) Rating 600 ±20 50 100 50 100 104 Unit V V A A A A W BRAKE PART Symbol VCES VGES IC ICM PC (Note. 3) VRRM IFM (Note. 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum Collector dissipation Repetitive peak reverse voltage Forward current G – E Short C – E Short TC = 25°C PULSE Tf = 25°C Clamp diode part Clamp diode part Condition Rating 600 ±20 50 100 104 600 50 Unit V V A A W V A (Note. 2) CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing Condition Rating 800 220 50 500 1.0!103 Unit V V A A A 2s 3φ rectifying circuit 1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge current COMMON RATING Symbol Tj Tstg Viso — — Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Condition Rating –40 ~ +150 –40 ~ +125 2500 0.98 ~1.47 100 Unit °C °C V N.m g AC 1 min. Mounting M4 screw Typical value Feb.1999 MITSUBISHI IGBT MODULES CM50MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol ICES Parameter (Tj = 25°C) Test conditions VCE = VCES, VGE = 0V IC = 5.0mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 50A, VGE = 15V Tj = 150°C VCE = 10V VGE = 0V VCC = 300V, IC = 50A, VGE = 15V VCC = 300V, IC = 50A VGE1 = VGE2 = 15V RG = 13Ω Resistive load IE = 50A, VGE = 0V IE = 50A, VGE = 0V die / dt = – 100A / µs IGBT part, Per 1/6 module FWDi part, Per 1/6 module Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-emitter cutoff current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td (on) Turn-on rise time tr td (off) Turn-off delay time tf Turn-off fall time VEC (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) Min. — 4.5 — — — — — — — — — — — — — — — — Limits Typ. — 6 — 2.2 — — — — 150 — — — — — — 0.14 — — Max. 1 7.5 0.5 2.8 — 5.0 3.8 1.0 — 120 300 200 300 2.8 110 — 1.2 1.9 Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC °C/W °C/W (Note. 4) BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Collector-to-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop VCE = VCES, VGE = 0V IC = 5.0mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 50A, VGE = 15V Tj = 150°C VCE = 10V VGE = 0V VCC = 300V, IC = 50A, VGE = 15V IF = 50A, Clamp diode part IGBT part Clamp diode part Condition Min. — 4.5 — — — — — — — — — — Limits Typ. — 6 — 2.2 — — — — 150 — — — Max. 1 7.5 0.5 2.8 — 5.0 3.8 1.0 — 1.5 1.2 1.7 Unit mA V µA V nF nF nF nC V °C/W °C/W (Note. 4) Cies Coes Cres QG VFM Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) CONVERTER PART Symbol Parameter VR = VRRM, Tj = 150°C IF = 50A Per 1/6 module Condition Min. — — — Limits Typ. — — — Max. 8 1.5 1.7 Unit mA V °C/W Repetitive reverse current IRRM Forward voltage drop VFM Rth(j-f) (Note. 5) Thermal resistance Note 1. 2. 3. 4. 5. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Thermal resistance is specified under following conditions. • The conductive greese applied, between module and fin. • Al plate is used as fin. Feb.1999 MITSUBISHI IGBT MODULES CM50MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 100 VGE = 20 (V) Tj=25°C 11 50 10 25 9 87 0 0 1 2 3 4 5 6 7 8 9 10 15 100 12 TRANSFER CHARACTERISTICS (TYPICAL) VCE = 10V COLLECTOR CURRENT IC (A) 75 COLLECTOR CURRENT IC (A) 75 50 25 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 12 14 16 18 20 0 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 10 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 4 VGE = 15V Tj = 25°C Tj = 125°C 9 8 7 6 5 4 3 2 1 0 0 Tj = 25°C 3 IC = 100A IC = 50A 2 1 IC = 20A 2 4 6 8 10 12 14 16 18 20 0 0 25 50 75 100 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISITICS (TYPICAL) 3 2 CAPACITANCE VS. VCE (TYPICAL) 101 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25°C EMITTER CURRENT IE (A) 7 5 3 2 VGE = 0V 102 7 5 3 2 Cies Coes 100 7 5 3 2 101 7 5 3 Cres 0 0.8 1.6 2.4 3.2 4.0 10–1 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) Feb.1999 MITSUBISHI IGBT MODULES CM50MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIMES (ns) tf td(off) 5 3 2 5 3 2 3 2 Irr 102 7 5 102 7 5 3 2 td(on) tr trr 100 7 5 3 2 VCC = 300V VGE = ±15V 2 RG = 13Ω Tj = 125°C 1 10 0 10 23 5 7 101 3 2 3 5 7 102 101 0 10 2 3 5 7 101 2 3 5 7 102 10–1 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – f) 100 Rth(j – f) = 1.2°C/ W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – f) 100 Rth(j – f) = 1.9°C/ W 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) VGE – GATE CHARGE (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 50A VCC = 200V VCC = 300V 50 100 150 200 250 GATE CHARGE QG (nC) Feb.1999 REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 101 – di/dt = 100A / µs 7 7 Tj = 25°C