CM50MX-24A

MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE CM50MX-24A ¡IC ..................................................................... 50A ¡VCES ......................................................... 1200V ¡CIB (3-phase Converter + 3-phase Inverter + Brake) ¡Flatbase Type / Insulated Package / Copper base plate ¡RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers OUTLINE DRAWING & CIRCUIT DIAGRAM 121.7 ＊118.1 110 ±0.5 99 94.5 Dimensions in mm 1.15 0.65 4-φ5.5 MOUNTING HOLES 20.5 17 13 7 (7.4) 1.2 ＊13.09 ＊16.9 ＊28.33 ＊32.14 ＊47.38 ＊51.19 ＊66.43 ＊70.24 ＊81.67 ＊85.48 ＊89.29 ＊93.1 ＊96.91 ＊4.06 0 (3.81) TERMINAL t = 0.8 φ4.3 ＊4.2 0 54 55 56 57 58 59 60 61 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 3.75 0 30 29 28 27 26 25 24 23 ＊11.66 ＊15.48 ＊23.1 ＊26.9 ＊34.52 ＊38.34 ＊58.4 39 50 ±0.5 57.5 62 ＊15.48 ＊19.28 ＊30.72 ＊34.52 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 (3) (7.75) ＊15 ＊18.8 ＊30.24 ＊34.04 ＊45.48 ＊49.28 ＊60.72 ＊64.52 ＊75.96 ＊79.76 ＊91.2 ＊95 A 0.8 ＊Pin positions with tolerance 0 12.5 SECTION A 1.5 φ2.5 φ2.1 φ 0.5 0.8 3.5 LABEL Tolerance otherwise specified P(52~53) P1(54~55) NTC TH1(29) GuP(49) GvP(44) GwP(39) Division of Dimension 0.5 TH2(28) Tolerance ±0.2 ±0.3 ±0.5 ±0.8 ±1.2 to to to to to 3 6 30 120 400 EuP(48) R(1~2) S(5~6) T(9~10) B(24~25) GB(35) N(57~58) N1(60~61) GuN(34) EvP(43) U(13~14) GvN(33) EwP(38) V(17~18) GwN(32) W(21~22) over over over 3 6 30 over 120 E(31) * Use both terminals (R/S/T/P/N/P1/B/N1/U/V/W) to the external connection. CIRCUIT DIAGRAM Jan. 2009 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage (Tj = 25°C, unless otherwise specified) Conditions G-E Short C-E Short DC, TC = 97°C Collector current Pulse Maximum collector dissipation TC = 25°C Emitter current TC = 25°C (Free wheeling diode forward current) Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) Rating 1200 ±20 50 100 355 50 100 Unit V A W A BRAKE PART Symbol VCES VGES IC ICRM PC VRRM(Note.3) IF (Note.3) IFRM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 106°C Collector current Pulse Maximum collector dissipation TC = 25°C Repetitive peak reverse voltage TC = 25°C Forward current Pulse Rating 1200 ±20 30 60 260 1200 30 60 Unit V A W V A (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Conditions Repetitive peak reverse voltage Recommended AC input voltage (Note. 1) 3-phase full wave rectifying, TC = 141°C DC output current The sine half wave 1 cycle peak value, f = 60Hz, Surge forward current non-repetitive Value for one cycle of surge current Current square time Rating 1600 440 50 500 1040 Unit V Vrms A A2S MODULE Symbol Tj Tstg Viso — — — Parameter Junction temperature Storage temperature Isolation voltage Base plate flatness Torque strength Weight Conditions Rating –40 ~ +150 –40 ~ +125 2500 ±0 ~ +100 2.5 ~ 3.5 270 Unit °C Vrms μm N·m g Terminals to base plate, f = 60Hz, AC for 1 minute (Note. 8) On the centerline X, Y Mounting M5 screw (Typical) Note. 8: The base plate flatness measurement points are in the following figure. Heat sink side Y + – + convex ： – concave ： X – + Heat sink side Jan. 2009 2 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Parameter (Tj = 25°C, unless otherwise specified) Conditions VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 5mA, VCE = 10V Gate leakage current ±VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge IC = 50A, VGE = 15V IC = 50A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 50A, VGE = 15V VCC = 600V, IC = 50A VGE = ±15V, RG = 6.2Ω Inductive load (Note. 6) Tj = 25°C Tj = 125°C Chip (Note. 6) (IE = 50A) IE = 50A, VGE = 0V (Note. 6) Tj = 25°C Tj = 125°C Chip VEC(Note.3) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R RGint RG IE = 50A, VGE = 0V Thermal resistance per 1/6 IGBT (Note. 1) (Junction to case) per 1/6 free wheeling diode Internal gate resistance TC = 25°C, per switch External gate resistance Min. — 6 — — — — — — — — — — — — — — — — — — — — 6 Limits Typ. — 7 — 2.0 2.2 1.9 — — — 250 — — — — — 2 2.6 2.16 2.5 — — 0 — Max. 1 8 0.5 2.6 — — 8.5 0.75 0.17 — 100 50 300 600 200 — 3.4 — — 0.35 0.63 — 62 Unit mA V μA V nF nC ns μC V K/W Ω BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG IRRM(Note.3) Parameter Conditions Min. — 6 — — — — — — — — — — — — — — — 10 Limits Typ. — 7 — 2.0 2.2 1.9 — — — 150 — 2.6 2.16 2.5 — — 0 — Max. 1 8 0.5 2.6 — — 5.1 0.45 0.1 — 1 3.4 — — 0.48 0.79 — 100 Unit mA V μA V VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 3mA, VCE = 10V Gate leakage current ±VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Repetitive peak reverse current IC = 30A, VGE = 15V IC = 30A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 30A, VGE = 15V VR = VRRM IF = 30A (Note. 6) Tj = 25°C Tj = 125°C Chip (Note. 6) Tj = 25°C Tj = 125°C Chip (Note. 6) nF nC mA V VFM(Note.3) Forward voltage drop Rth(j-c)Q Rth(j-c)R RGint RG IF = 30A per IGBT Thermal resistance (Note. 1) per Clamp diode (Junction to case) TC = 25°C Internal gate resistance External gate resistance K/W Ω CONVERTER PART Symbol IRRM VF Rth(j-c) Parameter Conditions Min. — — — Limits Typ. — 1.2 — Max. 6 1.6 0.33 Unit mA V K/W Repetitive peak reverse current VR = VRRM, Tj = 150°C IF = 50A Forward voltage drop Thermal resistance per Diode (Note. 1) (Junction to case) Jan. 2009 3 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE NTC THERMISTOR PART Symbol R ΔR/R B(25/50) P25 Parameter Zero power resistance Deviation of resistance B constant Power dissipation Conditions TC = 25°C TC = 100°C, R100 = 493Ω Approximate by equation TC = 25°C Min. 4.85 –7.3 — — Limits Typ. 5.00 — 3375 — Max. 5.15 +7.8 — 10 Unit kΩ % K mW (Note. 7) MODULE Symbol Rth(c-f) Parameter Conditions (Note. 2) Min. — Limits Typ. 0.015 Max. — Unit K/W Contact thermal resistance Thermal grease applied (Note. 1) per 1 module (Case to fin) Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) 2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K). 3: IE, IERM, VEC, trr, Qrr and Err represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part. 4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. 5: Junction temperature (Tj) should not increase beyond 150°C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCE(sat) and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K] Chip Location (Top view) (121.7) (110) Dimensions in mm (tolerance: ±1mm) 38.8 47.9 63.9 70.4 75.9 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 85.8 91.3 97.6 101.2 102.8 29.7 0 0 54 (62) (50) 27.4 28.4 55 56 57 58 59 60 61 Tr Br 30 29 28 27 26 25 24 23 CR C R C R RN S N T N CR C R C R RP S P T P 1 2 3 4 5 6 7 8 42.0 Tr Tr Di Tr UP VP B r WP Th Di Tr Di Tr Di Tr UP UN VP VN WP WN Di Di Di WN UN VN 9 10 11 12 13 14 15 16 17 18 19 20 21 22 18.6 26.7 (Tr/UP, Tr/VP, Tr/WP) 27.4 (Di/Br) 27.9 (Th) 34.9 (Di/UP, Di/VP, Di/WP) 35.6 (Tr/UN, Tr/VN, Tr/WN) 43.3 26.7 35.8 44.9 62.7 72.1 78.1 83.1 86.5 93.5 99.4 0 LABEL SIDE Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor Jan. 2009 4 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE P1 V VGE = 15V GuP EuP P1 IC VGE = 0V GuP EuP P1 U VGE = 0V GuN E U VGE = 15V GuN E B IC V VGE = 15V GB E IC N1 V N1 N1 P side Inverter part Tr (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) N side Inverter part Tr (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) VCE(sat) test circuit B r Tr VG*E* = 0V (GuP-EuP, GvP-EvP, GwP-EwP, GuN-E, GvN-E, GwN-E) P1 V VGE = 0V GuP EuP P1 IE VGE = 0V GuP EuP P1 V IF B U U VGE = 0V GuN E VGE = 0V GuN E IE N1 V VGE = 0V GB E N1 P side Inverter part Di (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) N side Inverter part Di (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) VEC/VFM test circuit N1 B r Di VG*E* = 0V (GuP-EuP, GvP-EvP, GwP-EwP, GuN-E, GvN-E, GwN-E) Arm IE 0V Load VGE 90% 0% IE trr –VGE + +VGE 0V –VGE VCC IC 90% 0A t RG VGE VCE IC 0A td(on) tr td(off) tf Irr 10% 1/2 ✕ Irr Qrr = 1/2 ✕ Irr ✕ trr Switching time test circuit and waveforms trr, Qrr test waveform Jan. 2009 5 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR CURRENT IC (A) VGE = 90 20V 80 70 60 50 40 30 20 10 0 0 1 2 3 15 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 100 Tj = 25°C 13 4 3.5 3 2.5 2 1.5 1 0.5 0 0 VGE = 15V 12 11 10 9 4 5 6 7 8 9 10 Tj = 25°C Tj = 125°C 20 40 60 80 100 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 Tj = 25°C EMITTER CURRENT IE (A) 8 3 2 102 7 5 3 2 6 4 IC = 100A 2 IC = 50A IC = 20A 0 6 8 10 12 14 16 18 20 101 7 5 3 2 100 Tj = 25°C Tj = 125°C 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part 102 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 3 2 CAPACITANCE (nF) 101 Cies Coes SWITCHING TIME (ns) tf td(off) 102 7 5 3 2 100 td(on) tr 10–1 Cres VGE = 0V 10–2 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Conditions: 101 VCC = 600V 7 5 VGE = ±15V 3 RG = 6.2Ω 2 Tj = 125°C Inductive load 100 0 10 23 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) Jan. 2009 6 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 101 7 SWITCHING LOSS (mJ/pulse) SWITCHING TIME (ns) tf td(off) 5 3 2 102 7 5 3 2 td(on) tr Conditions: VCC = 600V VGE = ±15V IC = 50A Tj = 125°C Inductive load 2 3 5 7 101 2 3 5 7 102 100 7 5 3 2 Eoff Err Eon 101 7 5 3 2 100 0 10 10–1 0 10 Conditions: VCC = 600V VGE = ±15V RG = 6.2Ω Tj = 125°C Inductive load 5 7 101 2 3 5 7 102 2 3 GATE RESISTANCE RG (Ω) COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 102 Conditions: VCC = 600V 5 VGE = ±15V 3 IC, IE = 50A Tj = 125°C 2 Inductive load 7 SWITCHING LOSS (mJ/pulse) lrr (A), trr (ns) Eon 102 7 5 3 2 trr 101 7 5 3 2 Irr Conditions: VCC = 600V VGE = ±15V RG = 6.2Ω Tj = 25°C Inductive load 2 3 5 7 101 2 3 5 7 102 Eoff 101 7 5 3 2 Err 2 3 5 7 101 2 3 5 7 102 100 0 10 100 0 10 GATE RESISTANCE RG (Ω) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100 7 Single pulse, 5 TC = 25°C 3 2 7 5 3 2 GATE-EMITTER VOLTAGE VGE (V) IC = 50A VCC = 400V 15 VCC = 600V 10 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j–c) 10–1 10–2 7 5 3 2 5 0 0 50 100 150 200 250 300 350 GATE CHARGE QG (nC) Inverter IGBT part : Per unit base = Rth(j–c) = 0.35K/W Inverter FWDi part : Per unit base = Rth(j–c) = 0.63K/W Converter-Di part : Per unit base = Rth(j–c) = 0.33K/W Brake IGBT part : Per unit base = Rth(j–c) = 0.48K/W Brake Clamp-Di part : Per unit base = Rth(j–c) = 0.79K/W –3 10 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 TIME (s) Jan. 2009 7 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE RECTIFIER DIODE FORWARD CHARACTERISTICS (TYPICAL) Converter part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Brake part COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 102 4 VGE = 15V 3.5 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 Tj = 25°C Tj = 125°C 50 60 FORWARD CURRENT lF (A) 7 5 3 2 101 7 5 3 2 Tj = 25°C Tj = 125°C 0 0.5 1.0 1.5 2.0 100 FORWARD VOLTAGE VF (V) COLLECTOR CURRENT IC (A) CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) Brake part 102 7 5 3 2 FORWARD CURRENT IF (A) 101 7 5 3 2 Tj = 25°C Tj = 125°C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FORWARD VOLTAGE VF (V) 100 Jan. 2009 8