CM50TF-24H

MITSUBISHI IGBT MODULES CM50TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE X Z - M4 THD (7 TYP.) Gu P E u P A C QX S QX N Gv P E v P Gw P E w P P Gu N E u N P Gv N E v N Gw N E w N P G B E D G U V W N R K J N U T N AA L TAB #110, t = 0.5 M M AA L Y DIA. (4 TYP.) V F H AB P GuP P EuP GvP EvP GwP EwP Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM50TF-24H is a 1200V (VCES), 50 Ampere Six-IGBT Module. Type CM Current Rating Amperes 50 VCES Volts (x 50) 24 GuN EuN U N GvN EvN V GwN EwN W N Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.02±0.02 3.58±0.02 3.15±0.01 2.913±0.01 1.69 Millimeters 102.0±0.5 91.0±0.5 80.0±0.25 74.0±0.25 43.0 Dimensions P Q R S T U V X Y Z AA AB Inches 0.65 0.55 0.47 0.43 0.39 0.33 0.32 0.24 0.22 Dia. M4 Metric 0.08 0.28 Millimeters 16.5 14.0 12.0 11.0 10.0 8.5 8.1 6.0 Dia. 5.5 M4 2.0 7.0 1.18 +0.06/-0.02 30 +1.5/-0.5 1.18 1.16 1.06 0.96 0.87 0.79 0.67 30.0 29.5 27.0 24.5 22.0 20.0 17.0 Sep.1998 MITSUBISHI IGBT MODULES CM50TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Mounting Torque, M4 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM50TF-24H –40 to 150 –40 to 125 1200 ±20 50 100* 50 100* 400 0.98 ~ 1.47 1.47 ~ 1.96 540 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m Grams Vrms Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 5mA, VCE = 10V IC = 50A, VGE = 15V IC = 50A, VGE = 15V, Tj = 150°C Total Gate Charge Emitter-Collector Voltage VCC = 600V, IC = 50A, VGE = 15V IE = 50A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.5 2.25 250 – Max. 1.0 0.5 7.5 3.4** – – 3.5 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 50A, diE/dt = –100A/µs IE = 50A, diE/dt = –100A/µs VCC = 600V, IC = 50A, VGE1 = VGE2 = 15V, RG = 6.3Ω VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.37 Max. 10 3.5 2 80 200 150 350 250 – Units nF nF nF ns ns ns ns ns µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.31 0.70 0.033 Units °C/W °C/W °C/W Sep.1998 MITSUBISHI IGBT MODULES CM50TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 100 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 100 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 15 5 VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C 12 80 VGE = 20V 11 80 4 60 10 60 3 40 40 2 20 7 9 8 20 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 20 40 60 80 100 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 3 Tj = 25°C 2 EMITTER CURRENT, IE, (AMPERES) Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) 102 8 IC = 100A 102 7 5 3 2 101 6 Cies IC = 50A 4 101 7 5 3 100 Coes 2 IC = 20A VGE = 0V Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 1.0 1.5 2.0 2.5 3.0 3.5 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 tf REVERSE RECOVERY TIME, t rr, (ns) 103 Irr 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 50A 16 SWITCHING TIME, (ns) td(off) VCC = 400V VCC = 600V 102 td(on) VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 125°C 102 t rr 12 100 8 tr di/dt = -100A/µsec Tj = 25°C 4 101 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 10-1 102 0 0 100 200 300 400 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM50TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.31°C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.7°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998