CM50TU-24F

MITSUBISHI IGBT MODULES CM50TU-24F HIGH POWER SWITCHING USE CM50TU-24F ¡IC ..................................................................... 50A ¡VCES ......................................................... 1200V ¡Insulated Type ¡6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 102 80 ±0.25 20 4–φ5.5 MOUNTING HOLES (4) CM N 11 19.1 E G P 11 E 19.1 G 11 11.85 E GuN EuN GvN EvN GwN EwN GuP EuP G 74 ±0.25 91 GvP EvP GwP EwP U V W G E G E G E 39.3 18.7 1.25 10 10 5–M4NUTS Tc measured point 2.8 10 11 20 19.1 10 20 11 10 1.25 0.5 3.05 11 4 Tc measured point P G UP 29 –0.5 +1 19.1 7.1 G VP RTC E VP G VN RTC E VN V GWP RTC EWP GWN RTC EWN W 8.1 RTC EUP U LABEL 26 G UN RTC EUN N CIRCUIT DIAGRAM Feb. 2009 MITSUBISHI IGBT MODULES CM50TU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 50 100 50 100 320 –40 ~ +150 –40 ~ +125 2500 1.3 ~ 1.7 2.5 ~ 3.5 570 Unit V V A A W °C °C Vrms N•m N•m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M4 screw Mounting M5 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Test conditions VCE = VCES, VGE = 0V IC = 5.0mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 50A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 50A, VGE = 15V VCC = 600V, IC = 50A VGE = ±15V RG = 6.3Ω, Inductive load IE = 50A IE = 50A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to heat sink, Thermal compound applied*2 (1/6 module) Case temperature measured point is just under the chips Tj = 25°C Tj = 125°C Min. — 5 — — — — — — — — — — — — — — — — — — 6.3 Limits Typ. — 6 — 1.8 1.9 — — — 550 — — — — — 2.1 — — — 0.11 — — Max. 1 7 20 2.4 — 20 0.85 0.5 — 100 50 300 300 150 — 3.2 0.39 0.70 — 0.31*3 63 Unit mA V µA V nF nC ns ns µC V Contact thermal resistance Thermal resistance External gate resistance K/W Ω Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM50TU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 100 Tj=25°C 80 VGE=20V 9.5 9 15 11 10 3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 20 40 60 80 100 60 8.5 40 20 8 0 0 0.5 1 1.5 2 2.5 3 3.5 4 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 7 5 Tj = 25°C EMITTER CURRENT IE (A) Tj = 25°C 4 5 3 2 3 IC = 100A 2 IC = 50A IC = 20A 1 101 7 5 3 2 0 6 8 10 12 14 16 18 20 100 0.5 1 1.5 2 2.5 3 3.5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 tf td(off) td(on) tr Cies 101 7 5 3 2 SWITCHING TIMES (ns) 102 7 5 3 2 100 7 5 3 2 VGE = 0V Cres Coes 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Conditions: 101 VCC = 600V 7 5 VGE = ±15V RG = 6.3Ω 3 2 Tj = 125°C Inductive load 100 0 10 23 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM50TU-24F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.39K/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.70K/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 102 3 2 trr Irr NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 101 1 7 5 3 2 Conditions: VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 25°C Inductive load 2 3 5 7 101 2 3 5 7 102 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 Single Pulse TC = 25°C 100 0 10 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 50A VCC = 400V VCC = 600V 200 400 600 800 GATE CHARGE QG (nC) Feb. 2009 4