CM50TU-34KA

MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE CM50TU-34KA G IC ..................................................................... 50A G VCES .......................................................... 1700V G Insulated Type G 6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CM N 11 21.7 E G P 11 E 21.7 G 11 14.4 E GuP EuP GvP EvP GwP EwP G G E G E G E GuN EuN GvN EvN GwN EwN 3.75 80 ±0.25 102 48.5 17 3.75 107 90 ±0.25 23 12 12 4–φ5.5 MOUNTING HOLES (4) U V W 12 5–M5NUTS Tc measured point 2.8 7.1 11 23 21.7 12 23 11 12 0.5 0.8 11 4 8.1 P GUP EUP U GUN EUN N 29 –0.5 +1 21.7 Tc measured point LABEL 26 GVP EVP V GVN EVN GWP EWP W GWN EWN CIRCUIT DIAGRAM Sep. 2001 MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1700 ±20 50 100 50 100 600 –40 ~ +150 –40 ~ +125 3500 2.5 ~ 3.5 2.5 ~ 3.5 680 Unit V V A A W °C °C V N•m N•m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Test conditions VCE = VCES, VGE = 0V IC = 5mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 50A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 1000V, IC = 50A, VGE = 15V VCC = 1000V, IC = 50A VGE1 = VGE2 = 15V RG = 6.3Ω, Inductive load switching operation IE = 50A IE = 50A, VGE = 0V, Tj = 25°C IE = 50A, VGE = 0V, Tj = 125°C IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compound applied*2 (1/6 module) Tc measured point is just under the chips Min. — 4 — — — — — — — — — — — — — — — — — — — Limits Typ. — 5.5 — 3.2 3.8 — — — 225 — — — — — 3.9 — 2.2 — — 0.09 — Max. 1 7 0.5 4.0 — 7.0 1.2 0.38 — 100 100 400 800 200 — 4.6 — 0.21 0.47 — 0.17*3 Unit mA V µA V nF nC ns ns µC V V °C/W VEC(Note 1) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Thermal resistance*1 Contact thermal resistance Thermal resistance Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Sep. 2001 MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 100 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 11 COLLECTOR CURRENT (A) Tj = 25°C VGE = 20V 15 14 12 100 VCE = 10V Tj = 25°C 80 Tj = 125°C 60 80 10 60 40 9 40 20 8 20 0 0 2 4 6 8 10 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 6 VGE = 15V Tj = 25°C 5 Tj = 125°C 4 3 2 1 0 10 Tj = 25°C 8 6 IC = 100A 4 IC = 50A IC = 20A 2 0 20 40 60 80 100 0 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 CAPACITANCE Cies, Coes, Cres (nF) EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 101 7 5 3 2 Tj = 25°C Cies 100 7 5 3 2 102 7 5 3 2 Coes 10–1 7 5 3 2 Cres VGE = 0V 101 1 2 3 4 5 10–2 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Sep. 2001 MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 7 5 3 2 7 5 3 Conditions: 2 VCC = 1000V 7 5 RG = 6.3Ω 3 Tj = 125°C 2 103 tf td(off) td(on) tr 102 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) SWITCHING TIMES (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 Conditions: 5 VCC = 1000V VGE = ±15V 3 RG = 6.3Ω 2 Tj = 25°C Inductive load Irr 102 trr 7 5 3 2 101 VGE = ±15V Inductive load 100 0 10 23 5 7 101 2 3 5 7 102 101 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) EMITTER CURRENT IE (A) GATE-EMITTER VOLTAGE VGE (V) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j– c) = 0.21°C/W 3 FWDi part: 2 Per unit base = Rth(j– c) = 0.47°C/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 IC = 50A 16 VCC = 800V 12 VCC = 1000V 8 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 Single Pulse TC = 25°C 4 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) 0 0 50 100 150 200 250 300 GATE CHARGE QG (nC) Sep. 2001